ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of thermal-diffusion charge on the x-ray energy response of silicon surface-barrier (SSB) detectors have generally been ignored; consequently, the SSB response has been believed to be analyzed using the thickness of the depletion layer alone. Our new theory on the SSB x-ray response [J. Appl. Phys. 72, 3363 (1992)] was prepared for addressing recent confusion on plasma x-ray analyses using SSB detectors [Rev. Sci. Instrum. 59, 1380 (1988); 61, 693 (1990); 63, 4850 (1992)]. This approach was made under the assumption of a dominant contribution of the diffusion-charge signal in the vicinity of the x-ray incident location because of the strong reduction of the x-ray produced charge within the thermal-diffusion length. In this report, the comparison between this approximation (having an approximated solution) and the exact numerical calculation (using an integral form) is carried out. Necessity and importance of such three-dimensional treatments for the data analyses as well as the design of multichannel semiconductor-array detectors developed for plasma x-ray tomography diagnostics are highlighted. Furthermore, for the total diffusing-charge amount, the calculated results from our theory and the values using the comment from Donolato agree well within the accuracy of 1%.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354864
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