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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 340-342 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a strain-balanced growth approach, we show that the pseudomorphic InAsP/InGaP multiple quantum well structures, grown by chemical beam epitaxy, have superior material properties for 1.06 μm modulator application when compared to the strained InAsP/InP or the lattice-matched InGaAsP/InP systems. The broadening in absorption edge due to dislocations in the strained system, or composition fluctuations in the lattice-matched system as a consequence of growth temperature instability, can be greatly minimized. A strong reduction in the nonradiative recombination centers in the strain-balanced InAsP/InGaP system has been observed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 420-422 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple quantum well modulators have been proposed for use in photonic switching and optical interconnection systems. When used with the smallest devices and at competitive data rates, heating of the devices results. The heat is generated in a small volume coincident with the active optical area and alters the device parameters. In this letter we detail point source heating effects theoretically and experimentally in AlGaAs/GaAs and InGaAs/GaAs multiple quantum well modulators. These results indicate that when using small devices with small optical spots detrimental effects occur at average optical powers of less than 500 μW which limits the maximum data rate of optical systems.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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