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Growth of strain-balanced InAsP/InGaP superlattices for 1.06 μm optical modulators (1993)

Chiu, T. H. ; Cunningham, J. E. ; Woodward, T. K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 340-342

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Using a strain-balanced growth approach, we show that the pseudomorphic InAsP/InGaP multiple quantum well structures, grown by chemical beam epitaxy, have superior material properties for 1.06 μm modulator application when compared to the strained InAsP/InP or the lattice-matched InGaAsP/InP systems. The broadening in absorption edge due to dislocations in the strained system, or composition fluctuations in the lattice-matched system as a consequence of growth temperature instability, can be greatly minimized. A strong reduction in the nonradiative recombination centers in the strain-balanced InAsP/InGaP system has been observed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108951

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