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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Interaction of amorphous fluoropolymer with metal (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 508-510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding structure of an amorphous fluoropolymer, AF 1600, with Al, Ag, Au, and Cu were examined using x-ray photoelectron spectroscopy. 100 A(ring) thick films of AF 1600 were deposited on various metal films. AlF3 was found at the AF 1600/Al interface. F detached from the −CF3 functional group of the AF 1600, diffused into the Al/Al2O3 matrix and formed AlF3. The diffusion depth of F is estimated to be (approximately-greater-than)150 A(ring). An Al film was evaporated onto an AF 1600 film. The Al film was then mechanically peeled off and the remaining polymer surface examined. AlF3 was again found. For the spin-on AF 1600 film on Ag, Au, and Cu, no chemical reaction between the metal and the polymer were found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112281
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Reactive sputtering deposition of low temperature tantalum suboxide thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3264-3266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A relatively simple direct current sputtering deposition scheme has been employed to deposit 1000 A(ring) tantalum oxide thin films at low temperature. At (approximately-equal-to)190 °C substrate temperature, without further annealing, tantalum oxide films with a dielectric constant of 21–22 and a leakage current density as low as 10 nA/cm2 at 0.5 MV/cm electrical field strength (∼5 V of applied voltage) are obtained. These properties are achieved over a wide range of O2/Ar ratios when the total flow rate is kept constant. XPS measurements reveal that these films are nonstoichiometric with a composition of TaOx where x(approximately-equal-to)1.5. These low temperature, high dielectric constant thin films have potential applications as decoupling capacitors in very high speed electronic circuits and packaging.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109094
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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