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  • 2005-2009  (3)
  • 1985-1989  (35)
  • 1
    Digitale Medien
    Digitale Medien
    New emission spectra from oxygen (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2707-2708 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: New emission spectra have been observed from chemically produced excited oxygen. Evidence that the observed visible emission is due to oxygen dimer transitions is presented. Experimental results suggest that the observed oxygen dimer is stable O4 molecule rather than the usually observed Van der Waals-type dimolecular complex. The present system is discussed from the viewpoint of a new laser operating in the visible. The possibility of a similar oxygen-dimer laser operating in the near infrared is also discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101931
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  • 2
    Digitale Medien
    Digitale Medien
    Efficient operation of a chemically pumped oxygen iodine laser utilizing dilute hydrogen peroxide (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1490-1492 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A chemically pumped oxygen iodine laser system has been operated employing 35 wt. % H2O2 rather than commonly used 90 wt. % H2O2. Laser power as high as 40 W has been extracted. The maimum overall efficiency of 20.7%, which is almost 25% higher than the previously reported best data, has been achieved.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98664
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  • 3
    Digitale Medien
    Digitale Medien
    Observation of chemical laser oscillation in the visible range (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2400-2401 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new visible chemical laser analogous to excimer lasers in lasing principle has been studied. Laser oscillation has been observed in the red spectral range. To our knowledge this is the first demonstration of chemical laser oscillation in the visible spectral range.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101089
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  • 4
    Digitale Medien
    Digitale Medien
    Operation of Schottky-barrier field-effect transistors of 3C-SiC up to 400 °C (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2106-2108 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Schottky-barrier field-effect transistors have been fabricated from 3C-SiC and transistor operation has been studied at temperatures up to 400 °C. B-doped high-resistivity and undoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and source and drain contacts for n-type 3C-SiC, respectively. Transconductances of 1.7 and 0.15 mS/mm were obtained at room temperature and 400 °C, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99010
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  • 5
    Digitale Medien
    Digitale Medien
    Hydrogen retention and release dynamics of amorphous carbon films exposed to a hydrogen plasma (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1412-1414 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: H2 and DH release was investigated in a pulsed deuterium discharge over a carbon thin-film deposited wall. A large quantity of hydrogen was desorbed by 300 eV D+2 irradiation from hydrogenated amorphous carbon (a-C:H) deposited by a hydrogen-admixed methane discharge. On the other hand, a strong pumping effect was observed in the case of films deposited by a helium-admixed discharge. The wall pumping effect was attributed to the presence of interstitial vacancies rather than dangling bonds in the films. A linear dependence of the hydrogen release rate on the ion bombarding current suggests that molecular formation is by direct hydrogen abstraction instead of recombination of two free hydrogen atoms. A dynamic model of hydrogen release and retention for a-C:H layers during hydrogen implantation is proposed. Corresponding calculations yield satisfactory agreement with observations when using appropriate rate constants for trapping and detrapping.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100683
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  • 6
    Digitale Medien
    Digitale Medien
    Effect of UV laser preionization on CO2-laser-induced optical breakdown (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4003-4005 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of UV preionization by a KrF laser on CO2-laser-induced optical breakdown is studied experimentally. The electron number density as well as the breakdown probability is measured as a function of KrF-laser energy. The results show that the KrF-laser preionization is quite effective in initiating the optical breakdown. Once a breakdown is initiated, however, the number of produced electrons is found to be independent of the KrF-laser energy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335577
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  • 7
    Digitale Medien
    Digitale Medien
    Temperature dependence of electrical properties of n- and p-type 3C-SiC (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 599-603 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrical properties of unintentionally doped n-type and Al-doped p-type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures between 10 and 1000 K. Activation energies of Al acceptors and residual donors obtained from the temperature dependence of carrier density are 160 and 18 meV, respectively. 40%–60% of Al acceptors in the p-type epilayers are compensated, and hole mobility is limited by acoustic phonon scattering above 300 K and by ionized impurity scattering below 250 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.338211
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  • 8
    Digitale Medien
    Digitale Medien
    Schottky-barrier field-effect transistors of 3C-SiC (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2989-2991 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Schottky-barrier field-effect transistors have been fabricated first from 3C-type SiC. Al-doped p-type and nondoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and ohmic (source and drain) contacts for n-type SiC. Transistor operation was observed for the first time for the field-effect transistors of 3C-SiC.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337751
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  • 9
    Digitale Medien
    Digitale Medien
    Study of electrical breakdown induced by pulsed CO2 laser radiation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1904-1907 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrical breakdown streamers have been triggered in atmospheric air by laser-induced ionization. Streamers were successfully triggered even when the voltage applied to the electrodes was too low for breakdown to occur by the influence of the electrical field alone. The lifetime of the observed triggering effect has been found to be no less than 1 ms. Laser-induced streamers were photographically studied and conveniently classified by their observed shapes. In addition, the statistics of the observed phenomena have been compiled according to the classified shape. The statistics indicate that the shape of streamer is likely to be determined by the degree of laser-induced ionization. It has also been found that the speed of streamer formation is strongly related to the degree of ionization.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336418
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  • 10
    Digitale Medien
    Digitale Medien
    Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 254-257 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Internal stress in 3C-silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition was studied using Raman scattering. The stress in the epilayers grown on Si(001) at 1350 °C was found to be 5.4×109 dyn/cm2 tensile, which is comparable to that of silicon on sapphire. The magnitude of the stress is discussed in terms of the elastic deformation theory. It was found that there is not so much difference between the stress in 3C-SiC epilayers grown on Si(001) and that in 3C-SiC on Si(111) as the elastic deformation theory suggests.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339191
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