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  • 1
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 92 (1985), S. 0 
    ISSN: 1471-0528
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Summary. A new form of obstetric imaging using nuclear magnetic resonance (NMR) has been assessed for use in pregnancy. A total of 92 examinations were performed in 62 women during the second and third trimesters in both normal and complicated pregnancies including 14 with diabetes, six with pre-eclampsia and four with intrauterine growth retardation. Our experience has shown that NMR imaging gives excellent differentiation of both maternal and fetal tissues, and because of complete penetration both superficial and deep structures have been clearly identified. The best fetal images were obtained most consistently in the third trimester providing good detail of brain, lungs, liver, heart, bladder, subcutaneous fat, placenta and umbilical cord while maternal tissues were clearly seen at all gestations. As this form of imaging uses no ionizing radiation it offers an alternative means with unique capabilities for investigating pregnancy.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 25 (2000), S. 0 
    ISSN: 1365-2230
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Ichthyosis bullosa of Siemens (IBS; MIM: 146800) is an autosomal dominant disorder of keratinization characterized by epidermolytic hyperkeratosis without erythroderma. The clinical features are less marked than those of bullous congenital ichthyosiform erythroderma with relatively mild hyperkeratosis usually limited to the skin flexures. Mutations in the epithelial cytokeratin 2e (K2e), which is expressed in a differentiation-specific fashion in the upper spinous and granular layers of the epidermis, have been shown to cause IBS. We detected a novel mutation in a three generation kindred with IBS (1448T→A) within exon 7 of the KRT2E gene. This is predictive of an I483N substitution in the 2B domain of K2e. This extends the range of mutations reported to date and illustrates the usefulness of molecular genetics in the diagnosis of this disorder.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 143 (2000), S. 0 
    ISSN: 1365-2133
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Analytical chemistry 58 (1986), S. 656-658 
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1881-1883 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 °C and unannealed, x-ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5×1018 cm−3. This is the first observation of antisite defects in MBE-grown GaAs. These results are related to off-stoichiometric, strongly As-rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low-temperature MBE-grown GaAs layers.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 890-892 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel material deposited by molecular beam epitaxy at low substrate temperatures using Ga and As4 beam fluxes has been used as the active layer for a high-speed photoconductive optoelectronic switch. The high-speed photoconductive performance of the material was assessed by fabricating two devices: an Auston switch and a photoconductive-gap switch with a coplanar transmission line. In a coplanar transmission line configuration, the speed of response is 1.6 ps (full width at half maximum) and the response is 10 to 100 times greater than that of conventional photoconductive switches. Since the material is compatible with GaAs discrete device and integrated circuit technologies, this photoconductive switch may find extensive applications for high-speed device and circuit testing.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 475-478 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A model for the optical absorption of a-Si:H/a-SixN1−x :H multilayers has been developed which takes into account the effects of alloying in the interface regions between the a-Si:H and a-SixN1−x :H layers. Four different spatial variations of the film composition at the interfaces have been considered: abrupt, step, linear, and parabolic. The optical response of the interface regions is proposed to arise from Si-centered tetrahedra, containing both Si and N atoms. Calculations of the dielectric function of the multilayer using the appropriate effective medium approximation have indicated that alloying at the interfaces leads to a lower optical absorption and a broadening of the multilayer absorption edge as compared to multilayers in which interface alloying is ignored. However, interface alloying apparently does not contribute appreciably to the observed increase in the optical energy gap of the a-Si:H layer in the limit of decreasing layer thickness.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 582-587 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The real and imaginary parts n and k of the index of refraction of a carbon-rich hydrogenated amorphous silicon-carbon alloy film (a-Si1−xCx:H, x∼0.87) have been determined for photon energies between 1.5 and 4.75 eV from measurements of reflectance R and transmittance T. The optical energy gap parameter Eopt has been determined from the energy dependence of ε2=2nk, the imaginary part of the dielectric constant. Depending on assumptions involving the energy dependencies of valence- and conduction-band densities of states and optical matrix elements, values of Eopt ranging from 1.65 to 2.5 eV have been obtained for the as-deposited film (Td=250 °C). Independently of such assumptions, Eopt is observed to decrease to zero as the film is annealed. These results are consistent with enhanced tetrahedral coordination and demonstrate improved thermal stability for this silicon-carbon alloy film as compared to an hydrogenated amorphous carbon film. The density of the film increased from 1.51 to 1.88 g/cm3 with annealing up to 850 °C.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2681-2685 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using static techniques, we have measured the susceptibility and magnetization of carbon chars heat treated at temperatures between 1000 and 1500 °C, the so-called "transition range,'' where equivalent information is unavailable by electron spin resonance measurements due to severe line broadening effects. A small increase is observed in the Curie contribution to the susceptibility as a function of heat-treatment temperature, indicating the appearance of unpaired spins possibly associated with structural changes which occur in the transition range. The diamagnetism of these chars increases rapidly with increasing heat-treatment temperature, and a strong temperature dependence appears which is consistent with behavior expected for a two-dimensional gas of charged carriers. The latter can be ascribed to the formation and growth of microcrystalline graphitic regions.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Fluid Mechanics 18 (1986), S. 197-220 
    ISSN: 0066-4189
    Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Thema: Maschinenbau , Physik
    Materialart: Digitale Medien
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