Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties of (Er,R)2Fe17Ny compounds (R=Y,Gd) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6238-6240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of the interstitial (Er1−xRx)2Fe17Ny compounds with R=Y and Gd, x=0, 0.1, 0.25, 0.4, 0.5, 0.6, 0.75, and 1.0, 2〈y〈3, have been investigated. All the parent compounds crystallize in the Th2Ni17-type structure, except for Gd2Fe17 which crystallizes in the Th2Zn17-structure. All nitrides preserve the same structure as the parents. Introduction of nitrogen results in an increase in lattice constants a and c, and the expansion of unit-cell volume is about 6%. The Curie temperature was found to increase distinctly after nitrogenation. Nitrogen absorption leads to an increase in saturation magnetization, the values of the saturation magnetization increase monotonically with increasing Y or Gd concentration. Nitrogenation increases the uniaxial anisotropy of the Er sublattice, and causes a spin reorientation. The Y and Gd concentration dependencies of the spin reorientation temperature Tsr exhibit maxima. The tentative spin phase diagrams are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355410
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties of Er2Fe17−xAlxNy compounds : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6241-6243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of the Er2Fe17−xAlxNy compounds (0≤x≤3) have been investigated. All nitrides and parent compounds crystallize in the Th2Ni17 structure. Al substituted for Fe leads to an increase in lattice constants a and c. Introduction of nitrogen results in a further increase of lattice constants, but the magnitude of this increase is smaller for increasing x. As Al content increases, the Curie temperature of the parent compound increases, whereas the Curie temperature of the nitride decreases. The substitution of Al for Fe results in a decrease of Fe moment in both nitrides and parent compounds. Introduction of nitrogen leads to an increase in the uniaxial anisotropy of the Er sublattice and a spin reorientation. A tentative spin phase diagram has been constructed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355411
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Interfacial chemistry at metal/CdTe contacts as probed by differential scanning calorimetry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4145-4153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All four possible chemical reactivity patterns, namely, outdiffusion of Te (metal-Cd alloy formation), Cd outdiffusion (metal telluride compound formation), comparable chemical reactivity of the metal towards both Cd and Te (no Cd or Te outdiffusion), and chemical inertness of the metal towards CdTe, were differentiated via the differential scanning calorimetry (DSC) technique from a study of the interaction of nine different metals toward CdTe powder. The fusion signatures of free Cd or Te, exotherms due to compound or alloy formation, along with the thermal transitions of the metal telluride and/or the intermetallic were used for this purpose. These reactivity patterns are discussed within the framework of two different thermodynamic models. Both virgin and chemically etched CdTe surfaces were examined, and found to exhibit rather different reactivity trends towards the metal. The ramifications of these results in terms of the electronic properties of metal/CdTe contacts are discussed. Finally, DSC is shown to be useful for probing alterations in the CdTe surface chemistry as a result of the etch treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357365
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7452-7455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures and magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) were investigated by x-ray phase analysis and magnetic measurements. It is shown that Si substitution for Fe leads to a phase transition at x=0.2, and that the mean iron magnetic moment μFe of R2(Fe1−xSix)17 compounds (R=Dy, Y) decreases as Si concentration x increases; moreover, there is a maximum of dependence Tc(x) at about x=0.16. It is found that the exchange interaction constant AFeFe in R2(Fe1−xSix)17 compounds (R=Dy, Y) increases with x increasing by means of mean-molecular-field analysis of Tc. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357972
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of MoSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1518-1524 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial tetragonal and hexagonal MoSi2 (t-MoSi2 and h-MoSi2) were grown locally in (001), (111), and (011)Si. Five different epitaxial modes, referring to sets of definite orientation relationships between silicides and the substrate Si, were identified for t-MoSi2, whereas three distinct modes were found for h-MoSi2. Variants of epitaxy, required by the symmetry consideration, were also observed. It is conceived that ample thermal energy was supplied during high-temperature annealings to cause various modes of epitaxy which presumably correspond to low-energy states that occur. The reactive nature of the silicide formation is suggested to facilitate the growth of epitaxial silicides on silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336458
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of WSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3481-3488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336818
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of tetragonal and hexagonal WSi2 on (111)Si (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1515-1518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both epitaxial tetragonal and hexagonal WSi2 (t-WSi2 and h-WSi2) were grown locally on (111)Si. The best epitaxy was obtained in 600–1100 °C two-step annealed samples. The orientation relationships between t-WSi2 and Si are [110]WSi2(parallel)[111]Si and (004)WSi2(parallel)(2¯02), whereas those between h-WSi2 and Si are [0001]WSi2(parallel)[111]Si and (202¯0)WSi2(parallel)(202¯)Si. Interfacial dislocations, 80 A(ring) in spacing, were identified to be of edge type with (1/6)〈112〉 Burgers vectors. Two step annealings were found to be effective in improving the epitaxy and relieving the island formation of WSi2 on Si. Significant intermixing of W and Si atoms during the preannealing is proposed to account for the effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336308
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Second-harmonic generation and sum-frequency mixing of double-wavelength Nd:YALO3 laser to 413.7-nm violet coherent radiation in LiIO3 crystal (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4472-4473 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to get 413.7-nm violet coherent radiation by using second-harmonic generation and sum-frequency mixing of radiation from a 1341.4- and 1079.5-nm dual-wavelength Nd:YALO3 laser in a LiIO3 crystal is reported in this communication. First, the 670.7-nm red coherent radiation is obtained by second-harmonic generation of 1341.4-nm radiations in a LiIO3 crystal, and then the 670.7- and 1079.5-nm radiations are mixed again in a second LiIO3 crystal to get 413.7-nm radiation. The phase-matching angles are obtained for both nonlinear optical processes. The experimental results agree well with calculated results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352179
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Two-dimensional electron gases in delta-doped GaAs/In0.25Ga0.75As/GaAs heterostructures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2681-2683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm−2) can be realized. Experimental results show that a structure with an 80 A(ring) In0.25Ga0.75As layer as the active channel and an 80 A(ring) spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104806
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Sm2(Fe1−xAlx)17Ny compounds : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5890-5892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By means of x-ray phase analysis, it is shown that all the interstitial Sm2(Fe1−xAlx)17Ny nitrides and the parent compounds crystallize in Th2Zn17-type structure for x≤0.4. The lattice constants of the parent compounds increase linearly with Al concentration. The introduction of nitrogen leads to a further increase in lattice constants, but the amplitude of the increase decreases with increasing Al concentration. The introduction of nitrogen leads to an increase of Curie temperature Tc . The composition dependence of Tc of the parent compounds exhibits a maximum, whereas Tc of the nitride decreases monotonously with increasing Al concentration from 750 K for x=0 to 313 K for x=0.4. The mean magnetic moments of iron ions in both nitrides and parents decrease monotonously with increasing Al concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353512
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...