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  • 1990-1994  (1)
  • 1985-1989  (2)
Materialart
Erscheinungszeitraum
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Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1252-1255 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial silicon films were grown on (100) silicon wafers at temperatures between 650 and 700 °C without the need of special cleaning procedures. Deposition rates were from 30 to 80 nm/min. The structure of films was analyzed by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectroscopy. The films were doped by ion implantation. Electrical activity, Hall mobility, and sheet resistivity of the doped layers were measured. Both structural and electrical characterization yielded results indistinguishable from good-quality bulk wafers.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Journal of materials science 27 (1992), S. 4945-4948 
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Elemental sputtering yields from two phase AgCu alloys were measured for 20, 40 and 50 at% Ag. Argon ion bombardment energies were in the range 35–55 keV and the ion dose was 1×1019 ions cm−2. The sputtering yield for silver was found to be considerably below what was expected by simple selective sputtering of a two component alloy. Analysis by electron probe X-ray microanalysis and scanning electron microscopy of the eroded surface indicated that surface diffusion of copper from copper rich grains and geometrical constraints in the dense cone forest on Cu/Ag eutectic regions combine to reduce the sputtering yield for silver.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    The European physical journal 9 (1988), S. 129-133 
    ISSN: 1434-6079
    Schlagwort(e): 32.60.S ; 32.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Stark widths and shifts of sixCII, threeCIII and twoCIV spectral lines have been measured in a linear pinch discharge plasma and compared with available experimental and theoretical data. Electron density, (0.86−1.64)×1023 m−3, was determined by single wavelength laser interferometry using the visible 632.8 nm transition of He-Ne laser. The electron temperature of 38000 K was derived from the Boltzmann slope of severalCII spectral lines, and ratios of severalCII toCIII spectral lines. The stark widths (w) dependence on:(i) the upper-level ionization potential (I) of corresponding lines;(ii) net charge (z) of the emitter core seen by the optical electron undergoing transition, and(iii) electron temperature (T) was found to be of the form:w=az 2 T −1/2 I −b . However, it should be noticed that the essential role in the obtained trends belongs to the energy of the emitter core. The established overall trend is used to predict Stark widths of uninvestigated spectral lines originating from the given transition arrays.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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