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  • 1985-1989  (36)
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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reactions of cobalt thin films on BF+2 ion-implanted (001) silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3505-3511 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of cobalt thin films on BF+2 -implanted (001)Si have been studied by both cross-sectional and plan-view transmission electron microscopy as well as by sheet resistance measurements. The implantation-amorphous samples were found to favor the formation of CoSi2 at 400 °C and laterally uniform growth of the phase at higher temperatures. Two discrete layers of fluorine bubbles were observed in cobalt silicides in all BF+2 -implanted samples annealed at 400–800 °C. In 800–900 °C annealed samples, large bubbles were often observed to distribute near the CoSi2 grain boundaries. The results indicated that (1) fluorine atoms diffuse rapidly at a temperature as low as 400 °C, and (2) appreciable amounts of fluorine atoms are present with low solubility in cobalt silicides after annealing at 400–900 °C. The residual interstitial defects in BF+2 -implanted samples were completely annihilated by CoSi2 formation at 800–900 °C. The elimination of all interstitial defects in these samples is attributed to the injection of a high density of vacancies which were generated during silicide formation. The electrical resistivity of CoSi on blank silicon was measured to be about 350 μΩ cm. The presently measured electrical resistivity value is believed to be one of the most accurate values obtained for CoSi to date. Factors influencing the formation of cobalt silicides and defect structure are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341487
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Structural and microstructural characterization of a high-Tc superconducting YBaSrCu3O7−δ compound (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3593-3597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM), energy dispersive analysis of x ray (EDS), x-ray diffraction, electrical resistance, and magnetic susceptibility measurements were applied to characterize the structure and microstructures of a high-Tc superconducting YBaSrCu3O7−δ compound. The sintered samples were found to be predominantly of a single phase with a modified perovskite structure. Combined EDS/TEM and high-resolution lattice imaging with computed image simulation data showed that the atomic ratio of Sr and Ba atoms is about unity and Ba sites in YBa2Cu3O7−δ compound were partially substituted by Sr atoms in the three-layer perovskite structure, in agreement with the results of a previous neutron diffraction study. It was also found that the marked contrast difference in high-resolution images along [100] and [010] directions of the high-Tc oxygen-deficient superconducting crystals can be used to advantage to distinguish [100] and [010] directions of the modified perovskite structure in TEM. Lattice defects such as twins and dislocations were observed and analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341394
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth of high Tc superconducting Y-Ba-Cu-O thin films on (001)MgO by a chemical spray pyrolysis method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2523-2526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A chemical spray pyrolysis method has been applied to grow epitaxial films of a high Tc Y-Ba-Cu-O compound (YBCO) on (001)MgO. Films as thin as 0.6 μm in thickness was found to exhibit excellent superconducting transition behavior. For films up to 2 μm in thickness, typical values of Tc onset, Tc zero and transition width (90%–10%) were measured to be 82, 76, and 1.5 K, respectively. Both plan-view and cross-sectional transmission electron microscopy revealed that the orientation relationships between the epitaxial films and the substrate are [001]YBCO//[001]MgO and (110)YBCO//(200)MgO. Twins, which may be perceived as domains that are rotated 90° along the c axis of the thin films with respect to the substrate, were found to be copiously present. The influences of the configuration of the oriented growth of overlayer thin films on the superconducting properties are addressed. The advantages of the chemical spray pyrolysis in producing superconducting thin films are outlined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342497
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  • 4
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of CrGe on (111) and (001) germanium (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2821-2823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CrGe was grown locally on both (111) and (001) Ge by a solid-phase epitaxy scheme. Both plan-view and cross-sectional transmission electron microscopy were applied to determine the orientation relationships between epitaxial CrGe and germanium substrates, and to characterize the microstructural features of epitaxial regions and CrGe/Ge interfaces. The best CrGe epitaxy was obtained in (111) samples annealed first at 250 °C for 1 h followed by heat treatment at 600 °C for 1 h. Epitaxial regions as large as 20 μm in size were observed. CrGe was the first refractory germanide grown epitaxially on germanium. The quality of epitaxy is also unsurpassed by any metal germanide epitaxy achieved to date. The growth of a number of epitaxial germanides on germanium with regular atomic arrangements at the interfaces may facilitate the basic understanding of metal-semiconductor interactions as well as enhance the performance of various semiconductor-based devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341592
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  • 5
    Electronic Resource
    Electronic Resource
    Direct observation of discrete layers of dislocation loops near the projected ion ranges in high-dose P+-implanted (001)Si by cross-sectional transmission electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 565-567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of discrete layers of dislocation loops near the projected ion ranges (Rp loops) of 65–80 keV, high-dose (5×1015–2×1016/cm2) P+-implanted (001)Si was observed by cross-sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of the annealing behaviors of Rp loops provided strong evidences that they are related to P clustering. The inactivation of dopants due to precipitation, hence the appearance of Rp loops, is correlated to the sheet resistance data. The retardation of the solid phase epitaxial growth was shown to be related to the formation of Rp loops. Using Rp loops as an indicator of changes in point-defect distribution, a combined XTEM and plan-view TEM study was found to be most appropriate for the study of the precipitation process in high-dose P+-implanted silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101833
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high-dose As+-implanted (001) Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2304-2306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of a two-layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp ) have been observed by cross-sectional transmission electron microscopy in 80 keV, 1×1016 and 2×1016/cm2 As+-implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near Rp, and retardation of the epitaxial regrowth rate provide significant insight into the point-defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102045
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  • 7
    Electronic Resource
    Electronic Resource
    Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy-like structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk superconductivity with Tc (zero) up to 95 K in a Tl0.5Pb0.5Ca0.9Ce0.1Sr2Cu2 oxide with an Y1Ba2Cu3Oy -like structure was observed. Single-phase samples, tetragonal in structure with a=0.380±0.001, c=1.195±0.001 nm, and of P4/mmm space group, were prepared. The results represent the first case where Ce substitution significantly raised the Tc of a known compound. The samples were remarkably homogeneous both in composition and structure. The compounds were highly reproducible and stable. The preparative conditions were found to be much less stringent than those of other copper-based high Tc superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101536
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  • 8
    Electronic Resource
    Electronic Resource
    Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin-film and single-crystal silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1217-1219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of amorphous interlayer (a interlayer) in polycrystalline Ti films on single-crystal-silicon has been studied by cross-sectional transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 350–425 °C. The activation energy of the linear growth was measured to be 1.6±0.3 eV. Maximum thicknesses of the a interlayers were measured to be of the order of 10 nm. The formation of an a interlayer was observed in samples annealed at a temperature as high as 600 °C. The formation and growth kinetics of a interlayers in Ti/Si and Ni/Zr systems are compared. Essential factors for the formation and growth of an a interlayer are discussed. The results represent the first report on the growth kinetics of an a interlayer in metal thin films on single-crystal silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100720
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  • 9
    Electronic Resource
    Electronic Resource
    Formation of polycrystalline silicon grains in Si+-preamorphized, BF+2-implanted (111)Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3631-3635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The regrowth of Si+-preamorphized and BF+2- implanted thin films on (111)Si has been studied by both plan-view and cross-sectional transmission electron microscopy. Polycrystalline Si grains were found to form in Si+-preamorphized and BF+2- implanted (111)Si with the original amorphous-crystalline (a-c) interface located deeper in the preamorphized Si substrate than in BF+2- implanted samples. Rapid thermal annealing was performed to obtain kinetic data for the formation of polycrystalline Si grains. The nucleation and growth of polycrystalline Si grains were found to occur in the amorphous phase ahead of the growing a-c interface. The incubation time for the formation of 4 nm or larger crystallites in amorphous Si at 700 °C was found to be less than 30 s. The results are discussed in terms of the competition between the propagation of the a-c interface to sweep over the potential nucleation sites and random nucleation in the amorphous phase. Ramifications of the formation of polycrystalline Si grains in instances with a relatively low ion dosage and/or moderate annealing temperature are addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342611
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  • 10
    Electronic Resource
    Electronic Resource
    Interfacial reactions of titanium thin films on BF+2 -implanted (001)Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3604-3611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of titanium thin films on BF+2 -implanted (001)Si have been studied by both cross-sectional and planview transmission electron microscopy as well as by sheet resistivity measurement. Amorphous Ti-Si interlayers were observed in Ti films on blank and implanted samples following 400 °C annealing. The presence of the doping impurities was found to promote the early growth of the C54-TiSi2 phase. 100% surface coverage of TiSi2 on silicon was found in implantation amorphous samples annealed at 1000 °C for 1 h. The C54-TiSi2/Si interface energy and/or the silicide surface energy are thought to be lowered by the presence of the doping impurities to improve the surface morphology at high temperatures. The distribution of fluorine bubbles in doped samples with Ti overlayers annealed at 500–1000 °C indicated that (1) the solubilities of F in Ti silicides are very low, (2) the diffusivities of F in both C49- and C54-TiSi2 are rather high, and (3) most of fluorine atoms in TiSi2 layer escaped into ambient during 900–1000 °C annealing. The end-of-range defects were found to be not significantly affected by the TiSi2 formation. In samples annealed at 700–800 °C, the sheet resistance values were found to be the same in spite of the difference in distribution of doping impurities and defect structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344067
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