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  • 1985-1989  (3)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    The heteroepitaxial growth of ZnSe on GaP and GaAs substrates (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4920-4922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal layers of ZnSe have been grown on GaP and GaAs substrates in a hydrogen transport system. By the use of the H2 bypass flow, the growth rate versus substrate temperature characteristics are found to be modified. The growth on GaP (111)B substrates is limited by thermodynamic mass transport and that on GaP (100) substrates by the kinetics of the surface chemical reaction. ZnSe layers grown on the GaAs (100) face have larger growth rates and smoother surface morphologies than those on GaP (100). This result may originate from the lattice parameter mismatch between the epitaxial layers and the substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338359
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Some properties of Zn3P2 polycrystalline films prepared by hot-wall deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2368-2371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc phosphide (Zn3P2) thin films have been deposited by hot-wall deposition technique on glass substrate, and the deposition behaviors as well as structural properties of deposited films are studied. The source temperature and the temperature difference between source and substrate mainly affect the growth rate. Scanning electron microscope observation indicates the growth of columnar structure perpendicular to the substrate, and highly oriented thin films along the c axis are confirmed by x-ray diffraction analyses. The resistivity of the films is strongly related to the phosphorus composition X in Zn(1−X)PX, and the films having higher X show lower resistivity. The direct absorption edge is obtained as about 1.5 eV from the optical absorption data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337147
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Indium doping effects on vapor-phase growth of ZnS on GaP (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1761-1763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal layers of ZnS have been grown on GaP substrates in a hydrogen transport system. By the addition of In to the reactant agents, the orientation dependence of the growth rates of ZnS are reversed for (111)A and (111)B substrates. The improvement of crystallinity of the grown layers can be seen by the surface morphology observation and x-ray and reflection high-energy electron diffraction analyses. These phenomena are undoubtedly caused by the In-incorporation effects during the epitaxial growth of ZnS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336443
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    Paper (German National Licenses)
    Fulltext
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