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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Heat and mass transfer 20 (1986), S. 11-18 
    ISSN: 1432-1181
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Description / Table of Contents: Zusammenfassung Es wurden Experimente über den Wärmeübergang an einem einzelnen Tropfen durchgeführt, der sich in einer mit ihm nicht mischbaren Flüssigkeit senkrecht zu einem elektrischen Feld bewegt. Besondere Aufmerksamkeit wurde der durch das elektrische Feld induzierten Zirkulation im Inneren des Tropfens gewidmet. Es wurden drei verschiedene Kombinationen von Flüssigkeiten getestet, nämlich eine, bei der der Faktor aus der Dielektrizitätskonstanten und dem spezifischen elektrischen Widerstand zwischen Tropfen und Medium groß gegenüber 1 ist, und zwei, für die dieser Faktor klein gegen 1 ist. Im ersten Fall wurde eine merkliche Verbesserung des Wärmeübergangs beobachtet, die man auf die induzierte Zirkulation zurückführen kann. Jedoch kann die Verbesserung, die sich bei den zwei letztgenannten Bedingungen einstellte, nicht durch die dort verschwindend geringen Zirkulationsströmungen erklärt werden, wenn sie auch weniger stark ausgeprägt war.
    Notes: Abstract An experimental study has been performed on heat transfer to a single drop translating in an immiscible liquid on which a steady uniform electric field is imposed perpendicular to the drop path. Particular attention has been paid to the effect of field-induced circulations inside and outside the drop. Three different combinations of liquids were tested: one for which the drop-to-medium permittivity ratio ɛ* multiplied by the drop-tomedium resistivity ratio χ* is large compared to unity and two for which ɛ* χ* ≪ 1. In the former a remarkable enhancement of heat transfer was obtained which could be ascribed to the induced circulations. However, a less remarkable enhancement obtained in the latter two could not be explained by the circulations which are predicted to be vanishingly weak.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Biological cybernetics 60 (1988), S. 111-119 
    ISSN: 1432-0770
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Computer Science , Physics
    Notes: Abstract New computation methods for removing saccades in analysis of smooth pursuit eye movement characteristics were developed. They have removed saccades more completely than previous methods, and were very effective especially for noisy data recorded by the EOG method. The fully developed method was applicable to eye movement data in tracking of pseudo-random target movement as well as deterministic target movement. Furthermore, the methods were also useful for extracting the number and magnitudes of saccades more precisely.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 347-349 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si layers with low dislocation density were grown on GaAs substrates by pyrolysis using disilane. The dislocation density evaluated from SECCO etching (HF:H2 SO4 :K2 Cr2 O7 =100 cc:50 cc:2g) was less than 104/cm2, which is lower by two orders of magnitude than that of the GaAs layer on Si substrates. We found that the electron mobility of Si layers on GaAs substrates could be raised by decreasing the growth rate and a high mobility value the same as that of a homoepitaxial layer was obtained, although the Si layers were contaminated by an arsenic impurity of 1018 cm−3 .
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A combined machining method of diamond turning and numerically controlled elastic emission machining has been developed for finishing metal mirror surfaces made from Cu and Al alloys. A mirror surface can be polished without any stress by this method. Shape and roughness of the mirror surface examined in different machining methods are compared and discussed. A precisely shaped mirror with a roughness less than 2-nm Rmax was obtained. A copper mirror was installed in a VUV beamline of the Photon Factory. It is confirmed that the metal mirror finished by the present method has good optical characteristics for synchrotron radiation beamlines.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2503-2506 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single quantum wells of GaAs with barriers of (AlAs)2(GaAs)2 ultrathin-layer superlattices have been fabricated and photoluminescence measurement was performed. The photoluminescence energy was found to change almost linearly against the well width and the photoluminescence linewidth to get smaller with decreasing well width, which is in marked contrast to the case of a usual alloy-barriered single quantum well. It is indicated that the effective energy gap of the ultrathin-layer superlattice barrier decreases with the decreasing well width in such a structure.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2691-2695 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties were investigated on the superlattices with a unit lattice period of (AlAs)n(GaAs)n (n=1–24) which were grown by atmospheric-pressure metalorganic chemical vapor deposition. Raman spectroscopy indicated that superlattice structure is realized for each n without collapsing into alloys. Photoluminescence measurement indicated that the ultrathin-layer superlattice (with n larger than 2) has a direct energy gap, which is in good agreement with a tight-binding calculation.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 334-337 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs heterostructure selectively doped with Si was grown in a conventional normal pressure metalorganic chemical vapor deposition using trimethyl metals and arsine. Mobility of the two-dimensional electron gas as high as 8100, 148 000, and 401 000 cm2/V s was obtained at 300, 77, and 5 K, respectively, for a sample with an undoped Al0.3Ga0.7As spacer layer of 100 A(ring) and with a sheet electron density of about 5×1011 cm−2. The heterostructure with the spacer layer thinner than 100 A(ring) shows high mobility comparable to the best values obtained by molecular-beam epitaxy. The influence of growth parameters on the electron mobility in the heterostructure is described in detail.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4087-4090 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new connection rule of wave functions at a heterointerface was developed. This connection rule satisfies the conservation of probability current and contains a nonparabolic effective mass of carriers as a natural consequence of the theory. The subband energies in a GaAs/AlGaAs quantum well calculated using our new connection rule are in excellent conformity with a wide range of experimental results with band discontinuity of 85% and an effective mass for hole of 0.34m0.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 704-706 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 45 (1989), S. 1115-1116 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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