ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The perturbed γγ angular correlation (PAC) technique was used to study the interaction of implanted 111 In probe atoms with the donor atoms P, As, and Sb in Si. Nearest-neighbor pairs of In-P, In-As, and In-Sb atoms, characterized by νQ1 =179(1), 229(1), and 271(1) MHz, respectively, and having trigonal symmetry about a 〈111〉 axis (η1 =0), were observed after annealing the samples between 540 and 1170 K. These results indicate a strong interaction between acceptor and donor atoms in Si, thus explaining the present and earlier Rutherford backscattering-channeling results that the In atom solubility in Si was enhanced by the addition of As. The In-donor atom binding energy was about 0.5 eV. For increasing As concentrations, PAC data showed the appearance of small In-As atom clusters characterized by νQ2 (As)=238(1) MHz, η2 = 0.65(1); they were probably In-As2 complexes produced when mobile In atoms were trapped by As2 pairs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344188
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