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  • 1
    Electronic Resource
    Electronic Resource
    Relationship between hole trapping and interface state generation in metal-oxide-silicon structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1431-1433 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have discovered a general relationship between the location of trapped holes and the subsequent generation of interface states. Experimentally, we find that a hole can become an interface state, but it must first be trapped between 20 and 70 A(ring) from the Si/SiO2 interface (near-interfacial hole trap) and then transfer to within 18 A(ring) of the interface (interfacial trapped holes). Finally, the hole captures an electron and becomes an interface state. The transfer process between near-interfacial and interfacial trapped holes does not seem to be a simple release-capture process. Rather it appears to involve a complicated migration of the trapped hole defect towards the interface. Radiation-hardened oxides are shown to have a similar number of near-interfacial traps, but these traps are shallower than those in the soft oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99690
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  • 2
    Electronic Resource
    Electronic Resource
    Inversion criteria for the metal-insulator-semiconductor tunnel structures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1080-1086 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions of strong surface inversion in the semiconductor surface of a metal-insulator-semiconductor (MIS) tunnel structure are studied. By employing the voltage equation which governs the potential distribution in the MIS diode and by defining a parameter θ which indicates the energy separation between the semiconductor minority-carrier quasi-Fermi level and the metal Fermi level at the insulator–semiconductor interface, the values of θ(inv) under strong surface inversion are calculated in terms of oxide thickness, metal work function, oxide and interface state charges, semiconductor doping concentration, and reverse bias voltage. There are three conditions, namely, (1) without the external injection of the minority-carrier current density Jinj (i.e., Jinj=0), (2) with it (i.e., Jinj is positive), and (3) where Jinj is negative (i.e., carrier extraction). The second condition can be attributed to the critical insulator thickness dcri below which the semiconductor surface cannot be inverted solely by applying a reverse bias voltage, hence an externally injected minority-carrier current Jinj(inv) is required to achieve strong surface inversion at certain bias and oxide thickness. It also reveals that Jinj(inv) increases with decreasing insulator layer thickness and is strongly dependent on the oxide and interface state charges. For the Al–SiO2–Si tunnel structure, the calculated value of dcri is about 30 A(ring), which is in good agreement with the reported experimental results of 28–35 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337776
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Capture-emission process in double Poole–Frenkel well traps: Theory and experiments (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1042-1045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-dependent capture-emission process has been studied for double Poole–Frenkel well traps compared with that of single Poole–Frenkel well trap. The emission rate increases with increasing field strength for a single trap. However, for a double trap, it increases to a maximum then decreases with further increasing field due to the barrier lowering and interstate interactions between these two wells. Experimental capacitance deep-level transient spectroscopic data of GaAs samples grown by molecular-beam epitaxy show that when there is a delay in the capacitance transient then there always appear two levels, namely, 0.4 and 0.5 eV. In addition, for both levels, the emission rate increases first to a maximum and then decreases with increasing electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337395
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  • 4
    Electronic Resource
    Electronic Resource
    Wide-bandwidth and high-power InGaAsP distributed feedback lasers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4640-4644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication and performance characteristics of a wide-bandwidth InGaAsP laser diode structure are described. The wide bandwidth is achieved using semi-insulating Fe-doped InP current blocking layers around the active region. The lasers have a bandwidth of 18 GHz at 20 mW, emit 50 mW in a single transverse and longitudinal mode, have rise and fall times of less than 40 ps, have low chirp (FWHM〈1 A(ring)) under modulation, and exhibit harmonic distortion characteristics in agreement with fundamental calculations using a rate equation model. Error-free transmission with no dispersion penalty has been obtained using these lasers in a transmission experiment at 8 Gb/s over 76 km of fiber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343820
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  • 5
    Electronic Resource
    Electronic Resource
    Towards intelligent autonomous control systems: Architecture and fundamental issues (1989)
    Springer
    Journal of intelligent and robotic systems 1 (1989), S. 315-342 
    Details
    ISSN: 1573-0409
    Keywords: Automatic control theory ; autonomous control ; intelligent control ; intelligent systems ; hierarchical systems ; hybrid systems ; artificial intelligence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Autonomous control systems are designed to perform well under significant uncertainties in the system and environment for extended periods of time, and they must be able to compensate for system failures without external intervention. Intelligent autonomous control systems use techniques from the field of artificial intelligence to achieve this autonomy. Such control systems evolve from conventional control systems by adding intelligent components, and their development requires interdisciplinary research. A hierarchical functional intelligent autonomous control architecture is introduced here and its functions are described in detail. The fundamental issues in autonomous control system modelling and analysis are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00126465
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  • 6
    Electronic Resource
    Electronic Resource
    Selfconsistent diabatic approach to dissipative collective nuclear motion (1987)
    Springer
    The European physical journal 326 (1987), S. 69-77 
    Details
    ISSN: 1434-601X
    Keywords: 21.60.Ev ; 24.10.Cn ; 25.70-z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Within a selfconsistent description for the one- and two-body density matrices collective variables are introduced via scaling diabatic states. Equations of collective motion coupled to a collision integral for the single-particle occupation probabilities are derived from the randomness of the two-body interaction matrix elements and from an additional time smoothing procedure. For a linear approximation to the time-dependence of the single-particle energies the collision term conserves energy all by itself, i.e. the time-smoothed time derivative of the correlation energy vanishes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01294573
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  • 7
    Electronic Resource
    Electronic Resource
    Numerical study of a selfconsistent two-body theory for colliding ions in a one-dimensional model (1987)
    Springer
    The European physical journal 328 (1987), S. 423-429 
    Details
    ISSN: 1434-601X
    Keywords: 24.10.Cn ; 24.10.−i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A selfconsistent quantal two-body theory as obtained from the density-matrix hierarchy is solved numerically for the first time for a one-dimensional system modelling α+ α collisions at 80 MeV/u. Various truncation schemes for the two-body correlation function are investigated in order to explore the convergence properties of the theory. We find that perturbative treatments with respect to two-body processes do not yield reliable results in the energy regime investigated and that the nuclear stopping power sensitively depends on the order of the two-body correlations considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01289628
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  • 8
    Electronic Resource
    Electronic Resource
    Selfconsistent diabatic approach to dissipative collective nuclear motion (1987)
    Springer
    The European physical journal 328 (1987), S. 503-503 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01289641
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  • 9
    Electronic Resource
    Electronic Resource
    Dynamical aspects of intermediate-energy nucleus-nucleus collisions (1988)
    Springer
    The European physical journal 331 (1988), S. 439-449 
    Details
    ISSN: 1434-601X
    Keywords: 24.10.Cn ; 24.10.-i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We derive a transport equation for the description of non-relativistic heavy-ion collisions from time-dependentG-matrix theory. The approximations introduced are investigated within a modified Lipkin model on theA-body level and by one-dimensional calculations for colliding finite fermion systems on the two-body level. Both approximations are found to hold reasonably well. The classical limit of these equations in phase space yields a transport equation of the Vlasov-Uehling-Uhlenbeck type without double counting of interactions and uniquely determines the time-dependent mean field as well as an in-medium nucleon-nucleon cross-section on the basis of the sameG-matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01291902
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of DBP and MBP in organic phase by ion chromatography (1987)
    Springer
    Journal of radioanalytical and nuclear chemistry 111 (1987), S. 429-440 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Dibutyl-and monobutylphosphoric acid in acidic toluene medium were determined by ion chromatography. The procedure involved stripping with dilute sodium hydroxide solution and used carbon tetrachloride as diluent, then detection with a conductivity meter. The effect of flow rate, eluent strength and stripping solution, the effect of chloride and nitrate ion on DBP, the effect on DBP in sodium hydroxide solution, and the effect of organic aliphatic acids were discussed. The detection limits of 0.19 ppm and 0.14 ppm were found for DBP and MBP, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02072875
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