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  • 1
    Electronic Resource
    Electronic Resource
    Harmonic mixing at mm waveband in a high temperature superconducting grain boundary Josephson junction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2286-2288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a high Tc superconducting grain boundary Josephson junction, harmonic mixing experiments in the mm waveband were carried out, aiming at as large a harmonic number and as high a signal frequency as possible. The dependencies of intermediate frequency output on dc bias, harmonic number, frequency of local oscillator (LO), and other parameters were carefully studied. Until now, our best result was the mixing between the signal at 95 GHz and the 105th harmonic of LO at about 900 MHz. Preliminary experiments using a high Tc harmonic mixer and phase-locking loop were tried to stabilize the frequency of a mm wave source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356293
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  • 2
    Electronic Resource
    Electronic Resource
    A full electron LMTO-ASA study of electronic band structure and magnetic properties for RFe11TiNx (R=Y, Nd, Sm; x=0,1) : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6751-6753 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band structure and magnetic properties are studied for RFe11TiNx (R=Y, Nd, Sm; x=0,1) rare-earth iron intermetallic compounds using the linear muffin tin orbital with the atomic sphere approximation (LMTO-ASA) method. In order to elucidate the role played by the rare-earth atoms in these compounds, a full electron calculation is performed using a semirelativistic spin-polarized LMTO-ASA method in the local spin density approximation (LSDA) regime. The 4f electrons of the rare-earth atoms are considered to be valence electrons in the self-consistent calculations. For NdFe11TiN, a calculation in which the 4f electrons are treated as core-frozen states is also performed, and is compared with the full electron calculation. The effects of N atoms in these compounds are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358151
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis and magnetostriction of melt-spun Pr1−xTbx(Fe0.6Co0.4)2 alloys (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 271-273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudobinary Pr1−xTbx(Fe0.6Co0.4)2 (0≤x≤0.4) cubic Laves single phases have been synthesized by melt spinning and subsequent annealing. Their structure, magnetic properties and stability have been investigated. The composition, at which the anisotropy of Pr1−xTbx(Fe0.6Co0.4)2 is compensated, is close to x=0.1. The spontaneous magnetostrictions λ111 of Pr0.9Tb0.1(Fe0.6Co0.4)2 and Pr0.8Tb0.2(Fe0.6Co0.4)2 are larger than 1500×10−6 and 1900×10−6, respectively. Pr1−xTbx(Fe0.6Co0.4)2 (0.1≤x≤0.4) ribbon-based materials with 3% epoxy resin combine high magnetostriction with significant magnetic coercivity. Pr0.9Tb0.1(Fe0.6Co0.4)2 is a promising magnetostrictive material. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420772
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  • 4
    Electronic Resource
    Electronic Resource
    Crystalline orientation effects on the electronic transport properties of LaMnOy thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4877-4879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial and polycrystalline LaMnOy thin films on a LaAlO3 substrate by the off-axis magnetron sputtering technique and investigated the crystalline orientation effects on the electronic transport properties. Lattice mismatch, crystalline quality, resistivity, resistivity transition temperature Tp, and magnetoresistance (MR) in epitaxial films exhibit crystalline orientation dependence. The largest Tp and MR are observed in the (111) oriented films. In the polycrystalline films, the Tp is smaller than that of the (011)/(111) oriented films but higher than that of the (001) oriented films. The MR increases with decreasing temperature in contrast to that of the epitaxial films in which the MR experiences a peak near Tp. Oxygen annealing decreases MR and resistivity, and increases Tp in the order: (111)〈(011)〈(001)〈(polycrystalline). The above results suggest that the structure and composition of the epitaxial films improve in the order: (001)〈(011)〈(111). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402665
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  • 5
    Electronic Resource
    Electronic Resource
    Interface state generation after hole injection (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 328-336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After terminating electrical stresses, the generation of interface states can continue. Our previous work in this area indicates that the interface state generation following hole injection originates from a defect. These defects are inactive in a fresh device, but can be excited by hole injection and then converted into interface states under a positive gate bias after hole injection. There is little information available on these defects. This article investigates how they are formed and attempts to explain why they are sensitive to processing conditions. Roles played by hydrogen and trapped holes will be clarified. A detailed comparison between the interface state generation after hole injection in air and that in forming gas is carried out. Our results show that there are two independent processes for the generation: one is caused by H2 cracking and the other is not. The rate limiting process for the interface state generation after hole injection is discussed and the relation between the defects responsible for this generation and hole traps is explored. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377305
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  • 6
    Electronic Resource
    Electronic Resource
    InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4186-4188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350616
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  • 7
    Electronic Resource
    Electronic Resource
    Abnormal selection rules of interface modes in ultrathin GaAs/AlAs superlattice (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6403-6407 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a violation of the normal Raman selection rule in the resonant Raman spectra of interface (IF) phonon modes of the ultrathin (GaAs)4/(AlAs)2 superlattice. Contrary to the prediction of conventional theories, all four IF modes were observed in both (XX) and (XY) geometries. The result can be interpreted as a consequence of the deep penetration of the electron wave function in the GaAs wells into the AlAs barriers and a lack of definite parity of the electron wave function. Furthermore, our result indicates that conventional theory for bulk (thicker) systems may need to be modified and further developed to be applicable to ultrathin systems. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287122
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  • 8
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of melt-spun PrFe10Mo2Nx compounds (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5290-5292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and magnetic properties of PrFe10Mo2Nx compounds prepared by melt spinning have been investigated. A single-phase structure of ThMn12-like has been obtained in ribbons quenched at velocities vs below 40 m/s. The desired ThMn12 structure is considerably more stable for Pr(Fe, Mo)12 compounds than for Nd(Fe, Mo)12 compounds. Only at higher speeds than 50 m/s the PrFe10Mo2 ribbons quench into TbCu7-like compound of which Curie temperature is about 580 K. Annealing temperatures in excess of 1023 K are required to form ThMn12 crystal structure for the ribbons melt spun at 50 m/s. Upon nitrogenation at 723 K, the Curie temperatures increase to 663 and 580 K for TbCu7- and ThMn12-like nitrides, respectively. A coercivity of 3.3 kOe with a magnetization up to 118 emu/g at a field of 20 kOe has been obtained in the present ribbons. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373324
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanism for the generation of interface state precursors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2967-2977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of interface states plays an important role in the degradation of submicrometer devices. Previous attention was mainly focused on the conversion between interface states and their precursors. The total number of defects, which is the sum of precursors and interface states, is often implicitly assumed to be constant. However, recent work indicates that this number could be increased. The mechanism for the generation of new precursors is still not clear and the objective of this article is to throw light on it. The work is concentrated on investigating the roles played by hydrogen and the holes trapped in the oxide. It is found that, although the H2 or the trapped hole alone does not create precursors, their simultaneous presence causes the damage. The hydrogen species can be either supplied externally or released within the device. The generation is thermally activated, but saturates at a defect-limited level. The generation kinetics is studied and the rate limiting mechanism is discussed. Efforts have been made to unveil the differences between the generated precursors and those originally in the device, in terms of their existing forms, thermal stability, annealing behavior, dependence on the hole fluence, and the hydrogen involvement. It is concluded that they originate from different defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372285
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  • 10
    Electronic Resource
    Electronic Resource
    Falling liquid film thickness measurement by an optical-electronic method (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1883-1886 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An optical-electronic method was developed for measurement of falling liquid film thicknesses. The method is based on the postulate that a sheet light beam passing tangentially through a vertical liquid film on a cylinder will be blocked by the falling liquid film. Hence, when the beam is much wider than the film, the output of a photodiode probe which is located on the opposite side of the cylinder from the light source will be reduced by an amount proportional to the film thickness. The shadow of the transient film shape will also appear on a screen behind the falling film. Therefore, the variation of the amplitude of the film waves can be measured from the output of the photodiode and the average film thickness can be measured from pictures of the shadow using computer aided image analysis. The average film thickness measured agrees well with commonly accepted empirical equations. The maximum relative deviation between the experimental and calculated results is 18.5% with a standard deviation of 4.34×10−2 mm. Compared with popular conductance parallel-wire probes, this method has the advantages of convenience, noninvasive, higher spatial and temporal resolution, smaller hysteresis and it does not disturb the model's surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150557
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