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  • 1995-1999  (14)
  • 1955-1959  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1931-1937 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the velocity of misfit dislocation threading segments in real time during ultrahigh vacuum (UHV) chemical vapor deposition heteroepitaxial growth of thin SiGe epilayers on Si (001) using ultrahigh vacuum transmission electron microscopy. We observe no measurable difference in dislocation velocities during growth and during post-growth annealing of samples with an atomically clean surface, in contrast to previous observations in the InGaAs/GaAs (001) system. However, dislocations are seen to move approximately three times slower during growth and post-growth UHV annealing than during annealing of samples which have a native oxide present on the surface. We have used post-growth depositions of arsenic and oxygen to investigate the effect of surface condition on dislocation velocities, and discuss possible causes for the increase in dislocation velocities in the presence of a native oxide. These systematic studies suggest a hitherto unappreciated interaction between moving dislocations and the surface in this system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366984
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  • 2
    Electronic Resource
    Electronic Resource
    Catastrophic degradation lines at the facet of InGaAsP/InP lasers investigated by transmission electron microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 488-490 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Material transformations occurring at the facets of optically "stressed'' planar InGaAsP/InP diode lasers have been investigated by transmission electron microscopy and energy dispersive x-ray spectroscopy. Catastrophic degradation lines (CDLs) which are characteristic of catastrophic optical damage are observed for optical power densities ∼107 W/cm2. Analysis of the microstructure reveals a series of 150 nm wide GaAs-rich tracks and the formation of unique void/InGa-rich precipitate pairs within the InGaAsP active layer. These observations suggest that the formation of local group III-rich regions is the first stage in the formation of CDLs. Subsequently, the strong absorption of the impinging laser beam leads to propagation of an InGa-rich melt, thereby producing the GaAs-rich tracks through a process similar to liquid phase epitaxy. These results are discussed in the context of standard physical models for CDLs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114545
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 341-343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report strong transmission electron microscope (TEM) contrast between p-, i-, and n-doped InP layers in semiconductor laser diodes. For doping concentrations ∼1018 cm−3, contrast levels on the order 30% are observed between p- and n-type layers. A critical feature of these experiments is that the samples imaged in the TEM are relatively perfect, plane-parallel sided membranes fabricated with a focused ion beam. This technique offers the ability to detect and map doping variations with nm-scale resolution, simultaneously with the other compositional and defect information inherent to TEM. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114206
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  • 4
    Electronic Resource
    Electronic Resource
    Reconstruction of three-dimensional chemistry and geometry using focused ion beam microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3414-3416 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique to reconstruct high resolution three-dimensional structural images and chemical maps using focused ion beam microscopy is presented. A focused ion beam microscope is used to collect secondary electron images and secondary ion mass spectroscopy elemental maps as a function of depth. These images and elemental maps are then used to reconstruct volume image and chemical maps with 20 nm lateral and depth resolutions. Methods to improve lateral resolution and to reduce uncertainties due to differential sputtering are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125311
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  • 5
    Electronic Resource
    Electronic Resource
    Nanoscale structure and chemistry of Al0.49In0.51P thermal oxide (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2572-2574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the nanoscale structure and chemistry of the III–V thermal oxide formed from Al0.49In0.51P is described. Transmission electron microscopy studies have shown that the oxide is an amorphous compound, which occupies greater volume than the original unoxidized crystalline Al0.49In0.51P layer, and which contains O, Al, In, and P (i.e., none of the species are completely desorbed during the oxidation reaction). Electron energy loss spectroscopy and energy spectroscopic imaging have shown specifically that the oxidation products include Al2O3 and In2O3 and P, either as an oxide or in some other amorphous compound. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125081
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  • 6
    Electronic Resource
    Electronic Resource
    Alteration in carbon partitioning induced by the movement protein of tobacco mosaic virus originates in the mesophyll and is independent of change in the plasmodesmal size exclusion limit (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 18 (1995), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: The influence of the 30 kDa movement protein of tobacco mosaic virus (TMV-MP) on carbon partitioning in trans-genie tobacco plants (Nicotiana tabacum cv. Xanthi) expressing the TMV-MP was investigated. Using reciprocal grafting of transgenic tobacco plants expressing this movement protein and vector control plants, as well as transgenic tobacco plants expressing the TMV-MP in phloem cells only, we showed that the interactive site involved in carbon allocation to roots is localized to the mesophyll tissue. Biomass partitioning experiments conducted on transgenic plants, in which various deletion mutant forms of the TMV-MP (two of which included deletions in the domain responsible for increasing the size exclusion limit) were expressed, revealed that the TMV-MP exerts its influence on carbon allocation via a mechanism that is completely independent of the TMV-MP-induced increase in the plasmodesmal size exclusion limit. Furthermore, small N- and C-terminal deletions in the MP revealed the complexity of the interactions likely to be involved between the MP and an endogenous regulatory mechanism. We propose that the TMV-MP interferes with an endogenous signal transduction pathway that involves macromolecular trafficking through plasmodesmata to regulate biomass partitioning between the source and various sink tissues.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1995.tb00189.x
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  • 7
    Electronic Resource
    Electronic Resource
    SUGAR BEET YELLOWS IN GREAT BRITAIN, 1954 by R. Hull (1955)
    Oxford, UK : Blackwell Publishing Ltd
    Plant pathology 4 (1955), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.1955.tb00062.x
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  • 8
    Electronic Resource
    Electronic Resource
    SUGAR BEET YELLOWS IN GREAT BRITAIN, 1957 (1958)
    Oxford, UK : Blackwell Publishing Ltd
    Plant pathology 7 (1958), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.1958.tb00849.x
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  • 9
    Electronic Resource
    Electronic Resource
    SUGAR BEET YELLOWS IN GREAT BRITAIN, 1958 (1959)
    Oxford, UK : Blackwell Publishing Ltd
    Plant pathology 8 (1959), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.1959.tb00903.x
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  • 10
    Electronic Resource
    Electronic Resource
    SUGAR BEET YELLOWS IN GREAT BRITAIN, 1955 (1956)
    Oxford, UK : Blackwell Publishing Ltd
    Plant pathology 5 (1956), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.1956.tb00114.x
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