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  • 1
    ISSN: 0942-0940
    Schlagwort(e): Vertebro-basilar junction ; cerebral aneurysm ; 3-D CT angiography ; hypothermia ; cardiopulmonary bypass
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary This paper highlights two interesting cases of radial clipping of large aneurysms at the vertebro-basilar junction accompanied by a vascular anomaly, consisting of fenestration of the split basilar artery at its origin. Description of the inner and outer surface of the aneurysm were obtained pre-operatively, from analysis by 3D CT and 3D CT endoscopy of the form of the neck, parent vessels of the vertebral arteries on both sides, basilar artery and split basilar artery, as well as other details of branching. The neck exhibited a broad base in both cases. The height of the neck extended to the internal acoustic meatus, and it was possible to expose the circumference of the aneurysmal neck, peripheral basilar artery and both vertebral arteries proximally with an anterior transpetrosal approach. Based on the size of the aneurysm and the site being the anterior surface of the brain stem, clipping (consisting of interruption of the occluded portion and reconstruction of the parent vessels) was performed. In the first case it was achieved protecting the brain by hypothermia and barbiturates under deep hypothermia with extracorporal circulation, and in the second case, a state of circulatory arrest was used. This paper documents the report of two cases along with other cases treated so far.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 61 (1995), S. 65-70 
    ISSN: 1432-0630
    Schlagwort(e): 78.70 ; 61.70 ; 61.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V2) with the definite charge states, V 2 0 , V 2 −1 or V 2 −2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V 2 − using a specimen containing oriented divacancies.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 31 (1983), S. 183-185 
    ISSN: 1432-0630
    Schlagwort(e): 61.80 ; 85.30 ; 71.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The N2, O2, H2O, and CO2 molecules that have condensed on the surface of a pyroelectric tourmaline crystal were degassed successively by means of electron bombardment. The temperature dependence of the electrostatic field strength on the specimen surface was observed by electron diffraction; it decreased as the degassing advanced. The tourmaline surface behaved as a gas Chromatographic adsorbent.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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