ISSN:
1432-0630
Keywords:
61.70 Wp
;
61.70 Yq
;
64.75.+g
;
66.30 Jt
;
66.30 Lw
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Floating-zone Si crystals enclosed in quartz ampoules were exposed to Zn vapour released by an elemental diffusion source. Penetration profiles of Zn in Si were recorded using the spreading-resistance technique or neutron activation analysis. Both the erfc-type distributions observed in plastically deformed specimens and the non-erfc profiles determined on dislocationfree wafers are consistently interpreted within the framework of the kick-out model. As an implication, Si self-interstitials generated in excess by interstitial-to-substitutional transitions of in-diffusing Zn atoms annihilate not only at the surface but also at dislocations. On the other hand, dislocation-induced segregation of Zn appears to be rather minor, as revealed by transition electron microscopy. Combining the Zn incorporation rate in dislocation-free Si with solubility data from saturated specimens yields the self-interstitial contribution to the Si self-diffusion coefficient.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323437
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