ISSN:
1432-0630
Keywords:
61.70.-r
;
72.80.Ey
;
71.55.Eq
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The electrical properties and preferred lattice site of Cu in GaAs were investigated combining electrical and optical measurements with ion beam and structural analysis. From this comprehensive study it was determined that Cu introduces two levels in the band gap, that the concentration of electrically active centers introduced by Cu diffusion is considerably smaller than the total Cu concentration, that this ratio of electrically active to total Cu concentration depends strongly on the cooling speed after diffusion, and that the portion of Cu that remains electrically inactive forms Cu-Ga precipitates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01538203
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