ISSN:
1432-0630
Schlagwort(e):
71.55.Fr
;
72.80.Cw
;
71.45.Gm
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract The free charge carrier concentration as a function of the reciprocal temperature and the doping level [p(1/T)- andp(C)-characteristics] is calculated from the neutrality equation of a semiconductor containing positive or negativeU centers. The typical exponential laws and power laws of thep(1/T)- andp(C)-characteristics are given both for positive and negative correlation energy of the bound charge carrier pairs. Furthermore, the characteristics are evaluated differentially, in order to obtain criteria for the presence of negativeU centers in semiconductors.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF01197545
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