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Digitale Medien

Electrical activity and precipitation behavior of copper in gallium arsenide (1995)

Leon, R. ; Werner, P. ; Yu, K. M. ; [weitere]

Springer

Applied physics 61 (1995), S. 7-16

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Details

ISSN: 1432-0630

Schlagwort(e): 61.70.-r ; 72.80.Ey ; 71.55.Eq

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The electrical properties and preferred lattice site of Cu in GaAs were investigated combining electrical and optical measurements with ion beam and structural analysis. From this comprehensive study it was determined that Cu introduces two levels in the band gap, that the concentration of electrically active centers introduced by Cu diffusion is considerably smaller than the total Cu concentration, that this ratio of electrically active to total Cu concentration depends strongly on the cooling speed after diffusion, and that the portion of Cu that remains electrically inactive forms Cu-Ga precipitates.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01538203

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