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  • 73.60  (1)
  • Infra-red and Raman spectra and scattering  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 11 (1989), S. 455-466 
    ISSN: 0392-6737
    Keywords: Infra-red and Raman spectra and scattering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro si è condotta una completa analisi, dal punto di vista delle polarizzazioni, dello spettro Raman del GaS, per energie di eccitazione al di sotto del «gap» indiretto. Al fine di identificare le combinazioni di secondo ordine e i modi proibiti indotti da difetti, sono state eseguite anche misure di trasmittanza e riflettanza nell'infrarosso. L'impiego di tutte le possibili regole di selezione, applicate sia agli spettri Raman sia a quelli IR, ha permesso sempre di individuare i punti di simmetria dei modi coinvolti nello spettro Raman e, quando possibile, di assegnare le principali strutture non di Γ a modi dei puntiM oK. Si è cosí pervenuti a numerose nuove attribuzioni, contestando anche alcune precedenti assegnazioni, basate solo su studi separati degli spettri Raman o IR.
    Abstract: Резюме Предлагается поляризационный анализ спектра комбинацонного рассеяния в GaS для энергий возбуждения ниже непрямой запрещеннои зоны. Чтобы определить комбинации втрого порядка и дефект, индуцированный запрешеенным модами, которые появляются в спектрах, помимо шести хорошо известных Γ-фононов, вяшолняются также измерения пропускания и отражения инфракрасного излучения дляE⊥c иE∼c. Все имеюэиеся правила отбора применяются к данным по комбинационному рассеянию и к инфракрасым данным, что позволяет идентифицировать точки высокой симметрии для фононов, фигурирующие в рассеянии и, по возможности, описать главные не-Γ-структуры спектров. Этот анализ позволяет получить некоторые новые признаки, основанные на раздельном исследовании спектров комбинационного рассеяния и инфракрасных спектров.
    Notes: Summary A complete polarization analysis of the GaS Raman spectrum, for excitation energies below the indirect energy gap, is reported. In order to assign second-order combinations and defect-induced forbidden modes, that appear in the spectra besides the six well-known Γ-phonons, also IR transmittance and reflectance measurements, for bothE⊥c andE‖c, have been performed. All the available selection rules are applied to both Raman and IR data, allowing to identify the high-symmetry points of phonons involved in the scattering and, when possible, to ascribe the main non-Γ structures of the spectra to the knownK andM point modes. This analysis brings to several new attributions, also ruling out some previous assignments, based on the separate study of either Raman or IR spectra.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.60 ; 81.15 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A novel combination of methods is shown to produce semiconducting WS2 thin films with properties close to those of a single crystal. The first step requires the deposition of a very thin Ni layer on a quartz substrate. On top of it an amorphous, sulphur rich, (WS3 +x ) thin film is deposited by reactive rf sputtering. The final annealing step in an argon atmosphere yields 200 nm thick WS2 films. X-ray diffraction shows that the films crystallize in the 2H-WS2 phase and are perfectly oriented with the (002) basal planes parallel to the substrate. Residual W18O49 needles andβ-NiS grains are detected by transmission electron microscopy. The dc conductivity and its activation energy have values typical of bulk crystals. The optical absorption spectrum measured at Room Temperature (RT) shows excitonic peaks at the same energies as in a single crystal. RT photoconductivity measured as a function of wavelength is shown to result from interband transitions.
    Type of Medium: Electronic Resource
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