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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1886-1890 
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto La resistenza magnetica è stata misurata in cristalli singoli di CdIn2S4 con concentrazioni di portatori diverse che variano da 4.3·1015 cm−3 a 8.5·1018 cm−3. I risultati indicano che il minimo della banda di conduzione del CdIn2S4 è situato ak=0.
    Abstract: Резюме Измеряется магниторезистивный эффект в монокристаллах CdIn2S4, имеющих различные концентрации носителей от 4.3·1015 см−3 до 8.5·1018 см−3. Полученные результаты указывают, что минимум зоны проводимости в CdIn2S4 приk=0.
    Notes: Summary Magnetoresistance was measured on CdIn2S4 single crystals having various carrier concentrations ranging from 4.3·1015 cm−3 to 8.5·1018 cm−3. The results indicate that the minimum of the conduction band of CdIn2S4 is located atk=0.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1875-1879 
    ISSN: 0392-6737
    Keywords: Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Molte proprietà ottiche e di trasporto sono state studiate sui cristalli singoli di tipon di CuIn5S8. Si è determinato che il gap di energia a 0 K dalle misurazioni elettriche è 1.4 eV. Si è trovata un'anisotropia dell'effetto di magnetoresistenza e si è suggerito che i minimi della banda di conduzione siano situati in punti lungo le direzioni [100] nello spaziok. Si è trovata una banda di assorbimento ottico in una regione dell'infrarosso di (1÷1.6) μm, che è state attribuita alle transizioni delle piú basse bande di conduzione situate lungo le direzioni [100] a una piú alta banda di conduzione.
    Abstract: Резюме Исследуются некоторые транспортные и оптические свойства монокристаллов CuIn5S8 n-типа. Из электрических измерений определяется энергетическая щель при 0 К, которая составляет 1.4 эВ. Обнаружена анизотропия магниторезистивного эффекта. Предполагается, что минимумы зоны проводимости расположены в точках вдоль направления [100] вk-пространстве. Обнаружена оптическая зона поглощения в инфракрасной области (1÷1.6) мкм, которая связана с переходами из нижней зоны проводимости, расположенной вдоль направлений [100], В верхнюю зону проводимости.
    Notes: Summary Several transport and optical properties have been studied onn-type CuIn5S8 single crystals. The energy gap at 0 K was determined from the electrical measurements to be 1.4 eV. An anisotropy of the magnetoresistance effect was found and it was suggested that the minima of the conduction band were located at points along the [100] directions ink-space. An optical-absorption band was found in an infrared region of (1÷1.6) μm and was attributed to the transitions from the lowest conduction band situated along the [100] directions to an upper conduction band.
    Type of Medium: Electronic Resource
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