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  • 66.30.Jt  (1)
  • PACS: 61.80.Jh; 73.61.Cw; 79.70.+q  (1)
  • PACS: 68.55.Ln; 73.50.Pz; 82.80.Ej  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Nc ; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050996
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen concentration in chalcopyrite thin-film solar cells (2000)
    Springer
    Applied physics 70 (2000), S. 617-623 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55.Ln; 73.50.Pz; 82.80.Ej
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. A survey of the hydrogen concentration distribution in the various layers of chalcopyrite solar cells is presented. Depth profiles were measured by the nuclear reaction analysis method for the glass substrate, Mo back contact, Cu(In,Ga)S2 or Cu(In,Ga)Se2 absorber, CdS buffer, and ZnO window layer. We find that hydrogen is present in all layers in concentrations exceeding the solubility of hydrogen in the corresponding crystalline bulk materials. This indicates that the deposition process and the polycrystallinity of the layers favor the uptake of hydrogen. The measured concentrations range from some 1018 H/cm3 in the absorber up to some 1021 H/cm3 in the CdS buffer layer. Effects of annealing at elevated temperatures are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050003
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    Paper (German National Licenses)
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