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  • Articles: DFG German National Licenses  (58)
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  • Articles: DFG German National Licenses  (58)
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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the properties of NiFe2O4 thin films prepared by laser ablation of a stoichiometric NiFe2O4 target. Textured polycrystalline films were obtained on a-SiO2 as well as on various substrates with Au, Ag, Pt, and MgF2 buffer layers. Epitaxially oriented films were obtained on MgO, (11¯02)-oriented Al2O3, (112¯0)-oriented Al2O3, Y-stabilized ZrO2 (YSZ), and SrTiO3, although the crystalline quality of the films varied. Contamination by diffusion from the substrate and strains induced by both lattice constant mismatch and differential thermal expansion degraded the magnetic properties of the films, and in some cases decreased the electrical resistivity as well. By choosing the right substrate (YSZ), temperature (600 °C), and PO2 (0.01 mT), we are able to prepare epitaxial films with bulk saturation magnetization (Ms=270 G) and fairly low anisotropy (K∼105 erg/cm3) as inferred by torque magnetometry. These films and bilayers are expected to be useful in a variety of fundamental investigations as well as having the potential for technological applications.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlations between structural quality and superconducting behavior in 1000-A(ring)-thick Ba2YCu3O7−δ (BYCO) films grown on LaAlO3(100) from the coevaporation of BaF2, Y, and Cu, followed by an optimized ex situ annealing process are reported. Epitaxial films with smooth, laminar morphology and excellent crystallinity can be grown to have critical current density Jc values nearly identical to single crystals. This finding contrasts with the typical observation that Jc values in thin films of BYCO are very high compared to those of single crystals. This is attributed to a greater density of flux pinning sites due to structural defects within the films. The most crystalline films presented here have penetration length λ∼2000 A(ring) with temperature dependencies described well by the Bardeen–Cooper–Schrieffer (BCS) theory. Material disorder of two types can be controlled by the high-temperature stage Ta of the annealing process. The first type is point defects and dislocations the same size or smaller than the coherence length ξab, which Rutherford backscattering/channeling suggests decrease in number with increasing Ta. The second is crevices, pinholes, and microcracks, which are at least one to two orders of magnitude larger than ξab. At Ta 〈 850 °C, crevices, which create areas of nonuniform thickness, occur due to incomplete epitaxial growth and correlate with the presence of weak links. Hence film resistivity is high, Tc is low, and λ is large. As Ta is increased, the film morphology becomes smoother and all electrical properties improve, except for Jc in nonzero applied magnetic fields, since the improved epitaxy correlates with reduced flux pinning. By Ta= 900 °C, the BYCO films are similar to single crystals in both cation alignment and Jc behavior. Above this annealing temperature, pinholes and microcracks develop and increase in both size and density with increasing Ta. Although these relatively large defects do not act as weak links, they do affect magnetic screening (and hence λ), to result in an anomalous temperature dependence that masks the intrinsic BCS behavior.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6353-6360 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting and structural properties of Ba2YCu3O7−x (BYCO) films on LaAlO3(100) substrates can be improved by carefully optimizing the post-deposition annealing parameters. Films are grown by co-deposition of BaF2, Y, and Cu in the correct stoichiometric ratio to within 1% of 2:1:3. Annealing parameters in an ex situ furnace, including the ambient, annealing temperature, oxidation temperature, and duration of anneals are systematically studied. Films are characterized for epitaxial quality (χmin), morphology, critical temperature (Tc), sharpness of the superconducting transition (ΔT), and critical current density (Jc). For example, beyond simply dissociating BaF2, the use of wet O2 appears to prevent the agglomeration of oxides during the initial heating process, and then act to thermodynamically stabilize the basic BYCO film structure at high temperatures after being formed. Comparisons are made with the best single-crystal BYCO structural and electrical data available. The optimized films have relatively smooth morphology with χmin〈3%, Tc〉90 K, ΔT〈0.5 K, and Jc〉106 A/cm2 in essentially zero magnetic field at 77 K.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2246-2248 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and characterization of zinc-indium-oxide films with similar electrical conductivity and better transparency in both the visible and infrared compared with indium–tin–oxide, a widely used transparent conductor in many technological applications. Dramatically superior transmission properties in the 1–1.5 μm range in particular make zinc–indium–oxide attractive for use in infrared devices, where transparent electrodes are required. Resisitivities as low as 400 μΩ cm result from doping with small quantities of Sn; Al, Ga, and Ge are also effective dopants. Deposition on glass and quartz substrates as amorphous films by pulsed laser deposition and dc reactive sputtering is described. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 6076-6077 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 4210-4217 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2071-2072 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInO3, a layered material with the β Ga2O3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. The structures have been grown in situ by 90° off-axis sputtering, which allows the growth of uniform stoichiometric films over large areas with excellent step coverage. X-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy reveal high crystalline quality and coherent interfaces. They exhibit superior fatigue characteristics over those made with metal electrodes, showing little degradation over 1010 cycles, with a large remnant polarization.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2932-2934 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Ba2YCu3O7−δ (BYCO) films grown by the ex situ BaF2 process are comparable to single crystals both in crystalline quality and the value and temperature dependence of the critical current (Jc) in an applied magnetic field in the BYCO (001) direction of Ha=0.9 T. With the appropriate dose of either 2 MeV H+ or 135Xe+, we can enhance Jc by a factor of 2 in Ha=0.9 T with little effect on Tc. This is significantly greater than the ∼25% enhancement previously reported for epitaxial BYCO films grown by in situ techniques [Roas, Hensel, and Saemann-Ischenko, Appl. Phys. Lett. 54, 1051 (1989)]. This provides the opportunity to isolate the induced defects and study their properties.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 115-117 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInO3 is recently identified transparent conducting material which is structurally and chemically distinct from indium tin oxide [R. J. Cava, J. M. Phillips, J. Kwo, G. A. Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, Jr., J. H. Marshall, and D. H. Rapkine, Appl. Phys. Lett. 64, 2071 (1994)]. We have used both dc reactive sputtering in the on- and off-axis geometries and pulsed laser deposition to grow films of this material. Layers of pure GaInO3 as well as those partially substituted with Ge for Ga or Sn for In have been studied. Both growth techniques are capable of producing films with conductivity ∼400 (Ω cm)−1 and transmission as high as 90% throughout the visible spectrum for ∼1-μm-thick films. The growth techniques differ in the morphology of the films produced as well as in the degree of dopant incorporation that can be achieved. A post-growth anneal in H2 can help produce an optimized oxygen content and a reduction of resistivity. Hall measurements indicate a carrier concentration up to 4×1020 cm−3 for all films and a Hall mobility up to 10 cm2/(V s). Doping appears to be due both to oxygen vacancies and aliovalent ion substitution.
    Type of Medium: Electronic Resource
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