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  • 1
    Digitale Medien
    Digitale Medien
    Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5850-5857 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, we discuss parameters influencing (a) the properties of thin AlxGa1−xN layers grown by metalorganic chemical vapor deposition and (b) the electrical properties of the two-dimensional electron gas (2DEG) forming at the AlxGa1−xN/GaN heterojunction. For xAl〉0.3, the AlxGa1−xN layers showed a strong tendency towards defect formation and transition into an island growth mode. Atomically smooth, coherently strained AlxGa1−xN layers were obtained under conditions that ensured a high surface mobility of adsorbed metal species during growth. The electron mobility of the 2DEG formed at the AlxGa1−xN/GaN interface strongly decreased with increasing aluminum mole fraction in the AlxGa1−xN layer and increasing interface roughness, as evaluated by atomic force microscopy of the surfaces prior to AlxGa1−xN deposition. In the case of modulation doped structures (GaN/AlxGa1−xN/AlxGa1−xN:Si/AlxGa1−xN), the electron mobility decreased with decreasing thickness of the undoped spacer layer and increasing silicon doping. The electron mobility was only moderately affected by the dislocation density in the films and independent of the growth temperature of the AlxGa1−xN layers at xAl=0.3. For Al0.3Ga0.7N/GaN heterojunctions, electron mobility values up to 1650 and 4400 cm2/V s were measured at 300 and 15 K, respectively. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371602
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  • 2
    Digitale Medien
    Digitale Medien
    Effect of chloride on the photoluminescence of ZnS:Mn thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4154-4159 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: ZnS:Mn thin films at various substrate temperature are grown by halide transport chemical vapor deposition. These films show blue and red photoluminescence (PL) in addition to the typical yellow-orange emission. The manganese crystal environment is characterized by electron spin resonance (ESR) spectroscopy. A computer simulation of the ESR spectra is used to quantify the number of isolated manganese and the number of clustered manganese in the crystal lattice. These data reveal that the red emission occurs in films with low manganese concentration, and, therefore, occurs from a mechanism different than those previously posed. The activation energy for Mn incorporation is measured to be Ea=137 kJ/mol. From these data, a Mn–Cl defect pair is proposed as the red emission center. Self-activated blue emission in intentionally Cl-doped ZnS films is also demonstrated. Thus both red and blue PL in ZnS thin films result from chloride impurities. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370324
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  • 3
    Digitale Medien
    Digitale Medien
    Thermoelectric characterization of Si thin films in silicon-on-insulator wafers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3204-3208 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heat dissipation becomes an important issue for highly compacted integrated circuit chips because of device performance and reliability concerns. Thermoelectric cooling has been considered as one of the possible solutions for cooling high density, locally heated integrated circuits. It excels in scalability and reliability. In this study, the thermoelectric behavior of silicon thin films in silicon-on-insulator wafers has been investigated. We have designed a testing structure to measure Seebeck coefficient which is one of the most important thermoelectric parameters. In addition, a testing structure with platinum temperature sensors was built to measure Peltier cooling effects for the powered Si channels. We found that the implanted dopant concentration and postimplantation annealing play important roles on thermoelectric properties of the Si thin films. Also, an asymmetrical thermal behavior due to Peltier effect was observed for the implanted Si thin films, especially for samples annealed at lower temperatures. The thermoelectric power of the Si thin films could be improved by appropriate ion implantation and annealing processes. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371190
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  • 4
    Digitale Medien
    Digitale Medien
    Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6895-6901 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: With continuing scaling down in microelectronic devices, the current density and the power consumption in the devices must increase. Hence, device reliability under high current density is an issue for ultralarge-scale integration technology. This study investigates the heating behavior of the heavily doped Si channels under high current stress. Thermal and electrical characterization of the channels in bulk Si and in silicon-on-insulator were conducted. An abnormal asymmetrical heating along the channels in bulk Si has been observed. We propose a junction leakage mechanism to explain the phenomenon observed. Other asymmetrical thermal effects, such as electron–hole recombination and Peltier effect, have also been discussed. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371769
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  • 5
    Digitale Medien
    Digitale Medien
    Capacitance–voltage characteristics of liquid crystal displays with periodic interdigital electrodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 147-149 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Capacitance–voltage properties of the liquid crystal displays (LCD) with periodic interdigital electrodes (PIE) are characterized. The extreme capacitances at high and low driving voltages are derived analytically, based on the technique of conformal mapping. Its validity is verified by carrying out the two-dimensional simulations numerically. The results of theoretical modeling agree reasonably well with the capacitance measurement of an LCD with PIEs. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123134
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  • 6
    Digitale Medien
    Digitale Medien
    Corrugated quantum well infrared photodetectors for polarization detection (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 862-864 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, we propose the use of the newly developed corrugated quantum well infrared photodetectors (C-QWIPs) for polarization detection. The corrugated structure, which serves as an optical coupler as well as the polarization-sensitive component, is in this case directly created into the active region of the QWIP, therefore dispensed with the need of an external polarizer. Moreover, four C-QWIPs with differently oriented corrugated patterns can be integrated as one unit, thus allowing a precise, real-time measurement of the polarization state. The polarimetry of this detector unit was characterized using a blackbody source and a metal grating polarizer. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123391
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  • 7
    Digitale Medien
    Digitale Medien
    Quantum grid infrared photodetectors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 759-761 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter we introduce a quantum well infrared photodetector (QWIP) structure, which we refer to as the quantum grid infrared photodetector (QGIP). In an ideal structure, a grid pattern with very narrow linewidth is created in the QWIP active region to achieve lateral electron confinement, thereby improving its absorption as well as transport characteristics. In order to realize this detector structure, we have fabricated QGIPs with line patterns of lithographical linewidths wl ranging from 0.1 to 4 μm, allowing for possible sidewall depletion. Low-damage reactive ion beam etching was employed to produce vertical sidewalls. From the experimental data, although the best detector performance occurs at wl(approximate)1.5 μm, the detector starts to improve when wl〈0.5 μm, indicating a possible quantum confinement effect. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123302
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  • 8
    Digitale Medien
    Digitale Medien
    Molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 4058-4060 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-quality GaAs. The high resistivity of the oxygen-implanted area was maintained after the regrowth and no oxygen incorporation was observed in the regrown layer. The cutoff frequency of a 1.5-μm-gate metal-semiconductor field-effect transistor fabricated on the regrown layer over the high-resistivity areas is 7 GHz. This demonstration shows that planar technology can be used in epitaxial regrowth, simplifying the integration of vastly different devices into monolithic circuits. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123260
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  • 9
    Digitale Medien
    Digitale Medien
    A characterization technique for quantum well infrared photodetectors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3210-3212 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Despite the rapid development of the quantum well (QW) infrared technology, the intrinsic properties of the QW infrared photodetectors (QWIPs) have not been directly measured under the operating conditions of the detector. In this work, we introduce a characterization technique, which utilizes the surface corrugation to probe the absorption coefficient and the photoconductive gain of a QWIP under different operating conditions. This technique enables the intrinsic properties of the detector to be more accurately characterized and its performance better assessed. A mid-wavelength QWIP is used for the demonstration of this technique. The results are compared to those deduced from the conventional measurements. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.125280
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  • 10
    Digitale Medien
    Digitale Medien
    Temperature-accelerated dielectric breakdown in ultrathin gate oxides (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3708-3710 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Temperature-accelerated effects on dielectric breakdown of ultrathin gate oxide with thickness ranging from 8.7 to 2.5 nm are investigated and analyzed. Although superior reliability for ultrathin gate oxide at room temperature has been reported in recent literatures, a strong temperature-accelerated degradation of oxide reliability is observed in this study. Experimental results show that both charge-to-breakdown (Qbd) and breakdown field (Ebd) characteristics are greatly aggravated for ultrathin oxide at elevated temperature. The Arrhenius plot also confirms that the activation energies of Qbd and Ebd increase significantly as oxide thickness decreases, explaining the higher sensitivity to temperature for thinner oxides. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123228
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