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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 924-927 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic polarity of CdTe crystals has been studied with Auger electron spectroscopy. The polarity of various surfaces could be determined by normalizing the low-energy Te (NOO) peak with the high-energy Te (MNN) peak. Upon comparing the normalized ratios from both {111} surfaces, the ratio from (111) Te surfaces was found to be about 1.3 times that from (111) Cd surfaces. The identified polarity was consistent with recent results of anomalous absorption of x rays, the convergent beam method of transmission electron microscopy, and chemical etching. Air-cleaved {110} surfaces of CdTe crystals and surfaces of pure Te crystals were studied for comparison as well.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1344-1348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoelectric properties of CeFe4As12 have been measured. The compound was synthesized by reacting a powder mixture of CeAs2 and FeAs2 with As metal. The sample was characterized by both x-ray diffractometry and electron microprobe analysis. The Seebeck coefficient, electrical resistivity, Hall effect, and the thermal conductivity were measured between room temperature and about 900 K. The results indicate that CeFe4As12 possesses semimetallic behavior similar to that of CeFe4Sb12 with a room temperature electrical resistivity of 0.49 mΩ cm and a Seebeck coefficient of about 40 μV/K. The thermal conductivity of CeFe4As12 lies between that of CeFe4P12 and CeFe4Sb12 as may be expected from considerations of anionic mass and rattling effect of Ce atoms inside the skutterudite unit cell. A maximum thermoelectric figure of merit value of about 0.4 was obtained at 850 K for this compound. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4453-4459 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various reducing and oxidizing etches were applied to the polar (111)Cd and (111)Te surfaces of CdTe crystals. The induced surface layers were studied with Auger electron spectroscopy, and the chemical reactions involved were discussed. A dithionite etch left both (111) Cd and (111)Te surfaces Cd rich. The sulfur in the etch solution appeared to replace Te in the near surface. A hydrazine etch left the Cd to Te ratio about one to one on the surfaces. A large oxygen peak was observed to increase as the etching time and temperature increased, indicating that the etch was not reducing. Hydrogen heat treatment left the surface stoichiometric, free of contamination and crystalline. Hydrogen heat treatment was the best method we have tried to retain the stoichiometry of the (111)CdTe surfaces. The surfaces treated with oxidizing EAg-1 solution were Te rich, and the strong correlation between the relative concentration of Te and Ag suggested a reaction between Te and Ag. The Te(NOO)/Te(MNN) ratio on (111)Te surfaces was always significantly higher than that on (111)Cd surfaces after hydrogen heat treatment or sputter cleaning consistent with the crystallographic polarity we reported previously.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6213-6217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermoelectric properties of CoP3 and CeFe4P12 have been measured. These compounds were synthesized by a flux technique using Sn as the solvent. The samples were characterized by x-ray diffractometry and electron microprobe analyses. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured over a wide range of temperatures. The results indicate that CoP3 and CeFe4P12 are semiconductors, in agreement with theoretical predictions. The thermal conductivity of CeFe4P12 is about 10 times larger than that for CeFe4Sb12 which is primarily due to both reduced motion of the Ce ions in smaller voids and lower hole–phonon scattering. The results are analyzed and discussed to provide guidelines for optimization of the thermoelectric properties of these materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7372-7374 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the phase-matching temperature for second harmonic generation (SHG) of 1064-nm radiation on Li/Nb and Li/Mg ratios in MgO-doped lithium niobate crystals was investigated. Crystals studied were grown from melts with 0, 1, 2, and 5 mol % MgO and were equilibrated to different Li contents through a vapor-phase-transport process. Crystals with no MgO doping, equilibrated to the Li-rich phase boundary, had the highest phase-matching temperature. At room temperature (25.5 °C), this material phase-matched for SHG of 978.4-nm radiation to generate blue light.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5282-5284 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The prospect of temperature tunability in an AgGaSe2 crystal for use in infrared nonlinear optics is explored for the first time. Tunable second harmonic generation from CO2 laser radiation is studied at different temperatures of the crystal. The tuning offered is small and the experimental finding is consistent with dispersion measurement.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1024-1028 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An optical pyrometer has been developed which resolves 20 μm at a working distance of 24 in. and measures relative temperature differences of ±2 °C over the range 1000–2000 °C. The instrument is particularly suitable for measuring temperature or emissivity distributions in very small heated objects.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2583-2590 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) have been used to study the polar (111)Cd and (111)Te surfaces of intrinsic CdTe crystals. Complementary information on surface composition, chemical state of the surface elements, and surface structure was obtained. The Auger parameters were used to identify the chemical states of elements on surfaces of semi-insulating undoped CdTe crystals which suffered from static charging effects. With this approach, we were able to determine that after chem-mechanical polishing, the Te-rich surface layer was mostly in the pure Te state. Only a trace amount of TeO2 was detectable. Sputtered and vacuum annealed (111) surfaces were found to be stoichiometric: both Cd and Te were in the chemical state of CdTe. Both (111) Cd and (111) Te surfaces showed sixfold symmetric LEED patterns. No evidence of surface reconstruction was found. Angle-resolved XPS showed no significant difference between 0° and 70° tilt on either the (111) Cd or (111) Te surfaces. Angle-resolved AES, however, showed significant differences between (111) Cd and (111) Te at 0° and 70° tilt, and the crystallographic polarity identified this way was consistent with results based on chemical etching and standard AES techniques, and with reported results of x-ray diffraction and transmission electron microscopy.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1489-1491 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchronous noncollinear upconversion detection is reported for the first time with a Nd:YAG laser in AgGaS2. Q-switched pump laser pulses with a repetition rate up to 50 Hz were synchronized with intracavity chopped continuous wave CO2 laser pulses. Results were obtained both by tuning the CO2 laser and by varying the angle between the laser beams.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5552-5554 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A periodic structure of bonded GaAs wafers has been proposed for quasi-phase-matched second-harmonic generation. However, current bonding processes used to fabricate these structures often lead to unacceptably high optical losses. When commercial semi-insulating GaAs wafers were bonded at 850 °C, increases in the free-hole concentration (thermal conversion) were found to be a major cause of excess optical loss. This conversion depended on both the GaAs source and the materials comprising the sample holder. We found that quartz and sapphire could not be used in contact with GaAs wafers because they stuck during the bonding process. On the other hand, As-charged graphite holders did not stick and worked well under our bonding conditions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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