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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 637-646 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of heavily supersaturated C into Si using solid-phase epitaxy (SPE) of implanted amorphous layers. The strain in the Si1−xCx/Si heterostructures was measured using rocking curve x-ray diffraction. The microstructure and defect introduction were examined using ion channeling and transmission electron microscopy (TEM). The fraction of C located on substitutional lattice sites in the Si was monitored using Fourier transform infrared absorption spectroscopy and ion channeling at resonance energies. Carbon-depth profiles were monitored by secondary ion mass spectroscopy. The metastable solubility limit for the incorporation of C into Si by SPE was found to be 3.0–7.0×1020 atoms/cm3, which is over three orders of magnitude above the equilibrium solubility at the Si melting point. This limit was determined by the ability to regrow without the introduction of microtwins and stacking faults along {111} planes. We postulate the local bond deformation resulting from the atomic size difference between C and Si leads to the faceting of the amorphous–crystalline interface and allows defect introduction, thus limiting the C supersaturations achieved in Si by SPE. It was also found that the defect density in the regrown alloys could be reduced by higher SPE regrowth temperatures in rapid thermal anneal processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3477-3484 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen has been introduced from a rf plasma into Czochralski Si at 275 °C. Most of the hydrogen is trapped near the surface where it forms Si—H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile during subsequent furnace anneals between 350 and 400 °C. A hydrogen concentration that is only a few percent of the oxygen concentration is sufficient to enhance the TD formation rate, indicative of a hydrogen-catalyzed process. Maximum concentrations for TDs after annealing at 400 °C exceed that for retained hydrogen. A mechanism of hydrogen diffusion through oxygen traps and correlated hydrogen-promoted oxygen diffusion is proposed to explain the enhanced TD formation rates.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2337-2342 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation of Czochralski Si has been performed to investigate the introduction of Si–O stretch modes and their correlation with thermal donor formation. Plasma hydrogenation at 275 °C introduces a well-resolved vibrational absorption band at 1005 cm−1, while absorption due to electronic excitations for thermal donors remains weak. We attribute this band to a Si–O precursor center for thermal donor formation, and suggest it is the oxygen dimer center discussed in other studies of oxygen in Si. Vibrational modes introduced at 990 and 1000 cm−1 during post-hydrogenation furnace annealing at 400 °C correlate with thermal donors TD2 and TD3, respectively. Stretch frequencies for Si–O in thermal donor centers are compared to those for oxygen aggregates in oxygen-implanted and electron-irradiated Si.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3656-3668 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Fourier transform infrared absorbance spectroscopy. Concurrent strain measurements were performed using rocking curve x-ray diffraction to correlate strain relaxation with the loss of substitutional C from the lattice. Loss of C from the lattice was initiated immediately without an incubation period, indicative of a low barrier to C clustering. The activation energy as calculated from a time to 50% completion analysis (3.3±5 eV) is near the activation energy for the diffusion of C in Si. Over the entire temperature range studied, annealing to complete loss of substitutional C resulted in the precipitation of C into β-SiC. The precipitates are nearly spherical with diameters of 2–4 nm. These precipitates have the same crystallographic orientation as the Si matrix but the interfaces between the Si and β-SiC precipitates are incoherent. During the initial stages of precipitation, however, C-rich clusters form which maintain coherency with the Si matrix so the biaxial strain in the heterostructure is partially retained.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 90 (1983), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. Langerhans’cells are intraepithelial dendritic cells believed to be important in the recognition and processing of exogenous antigens. They were demonstrated by immunohistological methods in cervical tissue obtained from 10 subjects ranging in age from 30 weeks gestational age to 62 years. Langerhans’cells were clearly delineated in all tissue sections and appear to form a relatively constant component of both the transformation zone and ectocervical epithelium. In addition to Langerhans’cells, a population of T lymphocytes characterized as predominantly T-cytotoxic/suppressor cells have also been demonstrated. The interaction between Langerhans’cells, T lymphocytes and stromal macrophages and their relation to antigen recognition is discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 9 (1993), S. 3553-3557 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 2847-2847 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 8 (1992), S. 3099-3101 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 9 (1993), S. 2270-2275 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2003-2010 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The floating wire technique was applied to characterize the focusing properties of the D2 spectrometer magnet to be used in the ANKE installation of the COSY Jülich accelerator facility. Trajectories corresponding to 140–600 MeV/c ejectiles emerging from a target in front of the rectangular-type D2 magnet were measured in order to determine the location of foci where detectors for the physics experiments were to be placed. The focus for trajectories of the same momentum was localized by varying the trajectory start angle at the target. To overcome the problem of instability, which arises when the pulley has to be located behind the focus, an unbalanced pulley was used. Other improvements include methodological features such as the particular design of our air-bearing pulley enabling a "freezing-in" of the wire movement and therefore yielding a very high accuracy of the wire position measurement, the use of a 40 μm gold-plated tungsten wire best fulfilling the mechanical and electrical requirements, a fast-regulating power supply in combination with an absolutely calibrated current meter, and the excellent accuracy of modern surveying instrumentation. An overall momentum accuracy of Δp/p≤10−3 and a position accuracy of the trajectories of ±1 mm in the vicinity of the foci have been demonstrated. The precision and accuracy of the floating-wire measurements are discussed and compared with ray-tracing calculations based on measured and calculated field maps. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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