Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Velocity map imaging studies of the Lyman α photodissociation mechanism for H atom production from hydrocarbons (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 4703-4706 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: H atoms produced in Lyman α photolysis of ethane, propane, and ethylene have been studied using velocity map imaging techniques. Two types of H atoms are identified, one formed along with an alkyl radical in the Rydberg state and the other by the subsequent decomposition of this Rydberg radical. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.477082
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Molecular Beam Study of the Collision-Induced Intramolecular Energy Transfer CO(a3.PI. .fwdarw. a'3.SIGMA.+, d3.DELTA.) (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 15642-15654 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100042a046
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of power on interface and electrical properties of SiO2 films produced by plasma-enhanced chemical-vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1600-1606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of power on the electrical and interface properties of silicon dioxide films produced by direct plasma-enhanced chemical-vapor deposition, using nitrous oxide and silane with high helium dilution, has been investigated. Auger depth profiling measurements indicate that while the bulk of the films have no measurable impurities, the interface region contains about 1.6×1015 atoms/cm2 of nitrogen. In contrast to thermal oxides, there is no thick interface layer with a large intrinsic compressive stress. The interface-state densities of the films obtained from capacitance-voltage measurements on metal-oxide-semiconductor diodes increase with increasing plasma power, but these can be removed to some extent by high-temperature annealing at temperatures in the range 800–950 °C. The flatband voltage is relatively insensitive to plasma power. Thermal oxide samples have been subjected to the plasma processes and these also show evidence of plasma damage. A thin layer produced at the interface by a separate plasma oxynitridation process is shown to be incapable of protecting the Si/SiO2 interface from the plasma damage produced by subsequent high-power plasma deposition processes. The nature of the interface states is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358913
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electron spin resonance study of NiFe2O4 nanosolids compacted under high pressure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 719-723 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, NiFe2O4 nanosolids are prepared by compacting nanoparticles, synthesized by the coprecipitation method, under different pressures. The variations of structure and interface states of the NiFe2O4 nanosolids with compacting pressures are studied by x-ray diffraction and electronic spin resonance (ESR). It is found that the crystal structure of the nanosolids has not changed under pressure up to 6.0 GPa, but the linewidth and g-factor values of their ESR spectra increased significantly with increasing pressure up to 4.5 GPa and then decreased slightly with further increase of pressure. These variations are discussed in terms of the changes of interparticle magnetic dipole interaction and superexchange interaction in NiFe2O4 nanosolids under different pressures. The experimental results suggest that 4.5 GPa is the optimum forming pressure, under which the NiFe2O4 nanoparticles can be compacted into a dense solid with their structure and nanoproperties still preserved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362879
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Defects generated by Fowler–Nordheim injection in silicon dioxide films produced by plasma-enhanced chemical-vapour deposition with nitrous oxide and silane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1818-1823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality silicon dioxide films have been produced using a direct plasma-enhanced chemical vapour deposition process with silane, nitrous oxide and helium that leaves a nitrided layer at the Si-SiO2 interface. X-ray photoelectron spectroscopy coupled with etch-back of the films has shown that the interface nitrogen is incorporated by nitridation of the silicon surface. Fowler–Nordheim injection measurements on thin films annealed after deposition for 1 minute at 950 °C show that the neutral-trap generation and interface state generation rates are comparable to that of thermal oxide if a proper deposition power is chosen. The data is consistent with an interpretation in which fast donor states, not Pb centres, account for almost all of the increase in the charge trapped at the interface. Too high deposition powers lead to excessive nitrogen and higher interface state generation rates. It is proposed that improved performance under hot-electron stress could be obtained by using an optimal deposition power to obtain an optimal nitrogen concentration followed by annealing in oxygen. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360762
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Isotopic study of the intermolecular versus intramolecular energy transfer in the N2(W,A)+N2(X) reactions (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 1673-1680 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The energy transfer from the long-lived states N2(W 3Δu, A 3Σ+u) to the radiating state N2(B 3Πg) in collisions with N2(X 1Σ+g) was studied under single collision conditions, employing a molecular beam/target gas cell arrangement. By means of using the isotopic species 14N2 in the metastable reactant beam and 15N2 in the target gas cell it was possible to differentiate between the intramolecular and the intermolecular energy transfer mechanisms, on the basis of well-resolved N2(B) product emission spectra. The overall contributions of the two reaction channels were found to be comparable, but they differ greatly in the vibrational product distributions. The intermolecular process populates preferentially the low vibrational levels of 15N2(B,v). The intramolecular process is most efficient for those 14N2(B,v) levels which are in close energy resonance with N2(A or W) vibrational levels. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468899
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3762-3764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038±0.0009 Å, which is in excellent agreement with the theoretical prediction of 4.503 Å. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288779
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    The properties of resonant transmission in triple-barrier/double-quantum-well heterostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3859-3864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To understand the nature of resonant tunneling in triple-barrier/double-quantum-well structures, we have investigated the properties of transmission probability TT of such structures with use of the transfer-matrix method. The transfer matrix of the middle barrier is calculated to analyze the amplitude decay, the phase shift, and the coupling effects that are induced between the two quantum wells. The dependencies of TT and the splitting of the resonant peaks on the middle-barrier thickness, the well width, and the symmetry of the structures are calculated. The origin of the transmission resonance and the resonant condition for symmetric (equal well widths) and asymmetric structures are discussed. The variations of TT with the applied voltage are also analyzed. The calculation results lead to some suggestions on how to design triple-barrier structures with improved performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350876
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Variations of resonant tunneling properties with temperature in strained Si1−xGex/Si double-barrier structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2500-2502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the resonant tunneling feature variations with temperature in molecular beam epitaxy grown strained Si0.78Ge0.22/Si double-barrier structures with different well width w and spacer thickness LS. Both w and LS have strong effects on the temperature characteristics of the peak current JP, the valley current JV, and the current peak-to-valley ratio (PVR). When w is reduced, both JP and JV are greatly increased. The resonant tunneling devices (RTDs) also have better temperature stability and PVR decreases slower. The RTD with larger LS has higher peak current. Beside w and LS, the quasi-Fermi level position has a very important influence on the resonant tunneling feature variations, which is stressed in the present work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104856
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    The different characteristics for heavy- and light-hole resonant tunneling in Si1−xGex/Si double barrier structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3365-3369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new approach to analyze the transport characteristics of resonant tunneling structures has been developed. It is shown that the Fermi-level Ef position per se, the temperature variations of the Fermi-level, the effective mass, and the mobility, have important influences on the resonant tunneling transport properties. Both calculations and experiments have shown very different features for heavy-hole and light-hole resonant tunneling in SiGe/Si resonant tunneling structures. These different features can for the first time be explained coherently. The calculated subband energy at current resonance can be much higher or lower than the Fermi level and the peak current can decrease or increase with temperature, depending on the device structure, the carrier type, and the working conditions. The calculations have predicted an interesting result that, in the low-temperature region, the valley current for the first heavy-hole resonance decreases with temperature, and that is confirmed by our experiments. The calculated temperature dependences of heavy- and light-hole transport, such as peak and valley currents/voltages and their variations with the well width, agree very well with our observations and other published results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350932
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...