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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 25-29 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present an analysis of the steady state optical response of two-dimensional optical superlattices with Kerr nonlinearity. We consider the effects of the modification of the refractive index modulation strengths in the superlattices and the angular deviation of incoming radiation from Bragg conditions. We find that under Bragg incidence the system displays optical bistability only when the modulation ratio exceeds a certain threshold. We also predict that optical bistability can disappear under non-Bragg incidence. Physical considerations are presented and discussed on how to optimize the chances for observing optical bistability in such a superlattice. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4032-4043 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial La0.7Ca0.3MnO3 (LCMO) thin films of a thickness ∼170 nm were grown on (001) LaAlO3 (LAO) and (001) SrTiO3 (STO) substrates by pulsed laser deposition. Transmission electron microscopy and associated techniques have been applied to investigate the microstructures introduced by lattice mismatch that are responsible for the observed differences in properties between these two films. Numerous secondary phase rods were observed in both films. For the LCMO/LAO film, Ca-deficient secondary-phase rods originated in the film after a thickness of about 25 nm and were found to be responsible for relieving in-plane compressive stress during the island growth. In the case of STO substrate, however, almost all of secondary-phase rods initiated at the film–substrate interface. The lattice mismatch between LCMO and STO is relaxed into regions of good coherent fit separated by such secondary phases, possibly resulting from interfacial reaction. The two types of substrates lead to the formation of two different crystallographic domain structures in the LCMO films. The film on LAO exhibits an almost pure [110] out-of-plane texture with 90° domains in plane. In contrast, the film grown on STO consists of mixed domains of [001] and [110] orientations and is dominated by [001] texture. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2896-2899 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ferroelectric PbTiO3 films were deposited by ion-beam-assisted deposition (O2+Ar 75–150 eV). The effects of ion bombardment on the Pb/Ti ratio and the structures of the film are discussed. For a given target-substrate distance and substrate temperature, the Pb/Ti ratio decreased with increasing bombarding beam energy. Compared with the films deposited without ion bombardment, the deposition rate was increased under ion bombardment, which is attributed to an increase in the surface reaction rate. The crystal grains are larger for films deposited under ion bombardment, which implies that ion bombardment enhances the surface mobility of adatoms and hence the growth kinetics of the growing films. Dielectric and ferroelectric properties of the as-deposited films are also reported.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1838-1840 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy. After annealing at 900 °C for 15 min, dislocation loops elongated along [110] were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si+ was implanted prior to annealing.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 309-311 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: β-PbO2 nanobelts, with a rectangular cross section, a typical length of 10–200 μm, a width of 50–300 nm, and a width-to-thickness ratio of 5–10, have been successfully synthesized by simple elevated evaporation of commercial PbO powders at high temperature. The PbO2 nanobelts are enclosed by top surfaces ±(201) and side surfaces ±(101¯) and their growth direction is [010]. Each PbO2 nanobelt is found to have a large polyhedral Pb tip at one of its ends, suggesting the growth is dominated by a vapor–liquid–solid mechanism. Electron beam irradiation of the PbO2 nanobelts results in the phase transformation from PbO2 to PbO and finally to Pb. © 2002 American Institute of Physics.
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3349-3351 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Elevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide–silica nanowires. The axial growth direction approaches [311] for nanowires with a high density of microtwins and is [211] for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configuration have been studied by transmission electron microscopy. The Young's modulus of the biaxially structured nanowires was measured to be 50–70 GPa depending on the size of the nanowire. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 223-225 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ∼3.5 nm. The dislocations are not produced by conventional lattice mismatch, rather, they could be the result of lateral compositional modulation in the Ga0.5In0.5P epilayer. © 2000 American Institute of Physics.
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1007-1009 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This work establishes the stability at elevated temperatures of columnar defects, artificially formed in the Bi-based cupric oxide superconductor Bi2Sr2Ca1Cu2O8 for enhanced vortex pinning. Isochronal anneals, conducted in air, led to losses of critical current density in two stages. The defects were relatively stable up to ∼550 °C, where second stage annealing began; above this, the pinning diminished rapidly. The recrystallization and loss of columnar defects were corroborated by transmission electron microscopy. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3362-3364 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using the white line intensities, electron energy-loss spectroscopy in a transmission electron microscope has been employed to characterize the valence conversion and oxygen vacancies in La1−xCaxMnO3−y. For a nominal doping composition x=0.33, the ratio of Mn4+ to Mn3+ is determined to be more than 0.25 but less than 0.5, and the content of oxygen vacancy y is no more than 0.065 (equivalent to 2.2 at. % of the oxygen content). At ymax=0.065, 60% of the residual charge introduced by Ca doping is balanced by the conversion of Mn3+to Mn4+ and 40% by oxygen vacancy. © 1997 American Institute of Physics.
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3093-3095 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Interface microstructures of BaTiO3/LaAlO3 grown by metalorganic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked up with the 90° domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation when cooled down from the growth temperature. The Burgers vector of the interface dislocations is 〈010〉. © 1996 American Institute of Physics.
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