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  • 1
    Electronic Resource
    Electronic Resource
    Ion-beam-assisted deposition of ferroelectric PbTiO3 films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2896-2899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 films were deposited by ion-beam-assisted deposition (O2+Ar 75–150 eV). The effects of ion bombardment on the Pb/Ti ratio and the structures of the film are discussed. For a given target-substrate distance and substrate temperature, the Pb/Ti ratio decreased with increasing bombarding beam energy. Compared with the films deposited without ion bombardment, the deposition rate was increased under ion bombardment, which is attributed to an increase in the surface reaction rate. The crystal grains are larger for films deposited under ion bombardment, which implies that ion bombardment enhances the surface mobility of adatoms and hence the growth kinetics of the growing films. Dielectric and ferroelectric properties of the as-deposited films are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354644
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructure of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 and SrTiO3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4032-4043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial La0.7Ca0.3MnO3 (LCMO) thin films of a thickness ∼170 nm were grown on (001) LaAlO3 (LAO) and (001) SrTiO3 (STO) substrates by pulsed laser deposition. Transmission electron microscopy and associated techniques have been applied to investigate the microstructures introduced by lattice mismatch that are responsible for the observed differences in properties between these two films. Numerous secondary phase rods were observed in both films. For the LCMO/LAO film, Ca-deficient secondary-phase rods originated in the film after a thickness of about 25 nm and were found to be responsible for relieving in-plane compressive stress during the island growth. In the case of STO substrate, however, almost all of secondary-phase rods initiated at the film–substrate interface. The lattice mismatch between LCMO and STO is relaxed into regions of good coherent fit separated by such secondary phases, possibly resulting from interfacial reaction. The two types of substrates lead to the formation of two different crystallographic domain structures in the LCMO films. The film on LAO exhibits an almost pure [110] out-of-plane texture with 90° domains in plane. In contrast, the film grown on STO consists of mixed domains of [001] and [110] orientations and is dominated by [001] texture. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290741
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  • 3
    Electronic Resource
    Electronic Resource
    Optical response in two-dimensional optical superlattices with Kerr nonlinearity (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 25-29 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an analysis of the steady state optical response of two-dimensional optical superlattices with Kerr nonlinearity. We consider the effects of the modification of the refractive index modulation strengths in the superlattices and the angular deviation of incoming radiation from Bragg conditions. We find that under Bragg incidence the system displays optical bistability only when the modulation ratio exceeds a certain threshold. We also predict that optical bistability can disappear under non-Bragg incidence. Physical considerations are presented and discussed on how to optimize the chances for observing optical bistability in such a superlattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362782
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  • 4
    Electronic Resource
    Electronic Resource
    Plasmon energy shift in mesoporous and double length-scale ordered nanoporous silica (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2629-2631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron energy-loss spectroscopy studies are reported on three different types of structures: solid silica spheres, mesoporous silica, and the double length-scale ordered (DLSO) porous silica. The mesoporous silica has porosity at the length scale of nanometers. The DLSO porous silica has an additional ordering on submicron hollows created by the template polystyrene spheres. The plasmon energy of the porous silica shows a significant shift in comparison to that of the bulk, suggesting that the local density of the bound electrons in the porous structures is lower than that in the bulk. This gives the possibility of tuning the electronic structure of silica by varying its porosity, leading to even lower dielectric loss. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123919
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal stability and annealing of columnar defects in Bi2Sr2Ca1Cu2O8/Ag superconductor (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1007-1009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work establishes the stability at elevated temperatures of columnar defects, artificially formed in the Bi-based cupric oxide superconductor Bi2Sr2Ca1Cu2O8 for enhanced vortex pinning. Isochronal anneals, conducted in air, led to losses of critical current density in two stages. The defects were relatively stable up to ∼550 °C, where second stage annealing began; above this, the pinning diminished rapidly. The recrystallization and loss of columnar defects were corroborated by transmission electron microscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114712
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  • 6
    Electronic Resource
    Electronic Resource
    Reduction of secondary defect formation in MeV B+ ion-implanted Si (100) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1838-1840 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy. After annealing at 900 °C for 15 min, dislocation loops elongated along [110] were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si+ was implanted prior to annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102181
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  • 7
    Electronic Resource
    Electronic Resource
    Epitaxial growth of BaTiO3 thin films at 600 °C by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2801-2803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaTiO3 thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO3 films by an MOCVD process. The films had a cube–cube orientation relationship with the substrate and were oriented with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113480
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  • 8
    Electronic Resource
    Electronic Resource
    Local texture and percolative paths for long-range conduction in high critical current density TlBa2Ca2Cu3O8+x deposits (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 106-108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A possible microstructural origin of the high critical current densities which have been obtained in c-axis-aligned, polycrystalline TlBa2Ca2Cu3O8+x deposits has been identified. The results of x-ray diffraction determinations of basal plane texture of Tl-1223 deposits prepared by spray pyrolysis are observed to depend on the size of the x-ray beam. Furthermore, most grain boundaries were found from transmission electron microscopy to have small misorientation angles. It is concluded that although overall the basal plane orientations are nearly random, there is a high degree of local texture indicative of colonies of similarly oriented grains. The spread in a-axis orientation within a colony is ∼10°–15°. Intercolony conduction, it is suggested, may be enhanced by a percolative network of small-angle grain boundaries at colony interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110908
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  • 9
    Electronic Resource
    Electronic Resource
    Studies of Mn valence conversion and oxygen vacancies in La1−xCaxMnO3−y using electron energy-loss spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3362-3364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the white line intensities, electron energy-loss spectroscopy in a transmission electron microscope has been employed to characterize the valence conversion and oxygen vacancies in La1−xCaxMnO3−y. For a nominal doping composition x=0.33, the ratio of Mn4+ to Mn3+ is determined to be more than 0.25 but less than 0.5, and the content of oxygen vacancy y is no more than 0.065 (equivalent to 2.2 at. % of the oxygen content). At ymax=0.065, 60% of the residual charge introduced by Ca doping is balanced by the conversion of Mn3+to Mn4+ and 40% by oxygen vacancy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119171
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  • 10
    Electronic Resource
    Electronic Resource
    Link-up of 90° domain boundaries with interface dislocations in BaTiO3/LaAlO3 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3093-3095 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface microstructures of BaTiO3/LaAlO3 grown by metalorganic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked up with the 90° domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation when cooled down from the growth temperature. The Burgers vector of the interface dislocations is 〈010〉. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116433
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