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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7301-7305 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The microstructural and magnetic properties of amorphous Co/Ti multilayer films and their variation with temperature are investigated by transmission electron microscopy (TEM) analysis and thermomagnetic measurements. Thermomagnetic curves showed two peaks at about 400 and 520 °C. The evolution of the structure monitored in the hot stage of the TEM was found to be consistent with the magnetic changes. The first peak of the saturation magnetization Ms at 400 °C was associated with the transformation from amorphous ferromagnetism to paramagnetism due to the amorphous Co existing in the film. Ms began to increase corresponding to the crystallization point of the ferromagnetic Co phase, which decreased with increasing amounts of Co in the film. Ms reached its maximum at 520 °C and then decreased because the phase transition occurred at a temperature greater than 520 °C and approached completion at 650 °C. The amorphous phase and crystalline phase formation and phase transition during annealing were observed in Co/Ti multilayer thin films and successfully explained the thermomagnetic properties of the film. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 184-189 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of aging on Co/C multilayer x-ray mirrors is presented. One significant result is the enhancement of the reflectivity at grazing incidence with time for the Co/C multilayers with C-on-top stored in air or argon and Co-on-top stored in argon. This can be interpreted in terms of a Co–C phase-separation at Co–C interfaces due to the positive enthalpy of Co–C mixing. Results also show that oxidation of the surface of Co-on-top Co/C multilayers plays an important role in the decrease of reflectivity. The oxidation can be prevented by storing the multilayers in an oxygen-free atmosphere or by depositing amorphous carbon as the top layer. The reflectivity of tarnished multilayers can be restored by removing the oxides by wet chemical methods. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the growth of in-plane textured (100) MgO on amorphous Si3N4 substrates by ion beam assisted deposition (IBAD). The textured MgO can be used as a structural template for subsequent epitaxial thin film deposition. The results are compared with IBAD of (100) and (111) yttria-stabilized-zirconia (YSZ). Based on transmission electron microscopy (TEM) and in situ reflection high energy-electron diffraction (RHEED), we find that MgO texturing is a nucleation-controlled process and the alignment is a function of nuclei size and density. This differs greatly from the evolutionary-type texturing process observed for IBAD (100) YSZ. Consequently, we are able to make 100 Å thick MgO films with 7° in-plane alignment, whereas IBAD (100) YSZ films need to be thicker than 5000 Å to achieve in-plane alignment better than 13°. This has important implications for the economical application of IBAD induced alignment in real manufacturing processes, including high Tc superconductor (i.e., YBCO) coated tapes, photovoltaics, magnetic thin films, and semiconductor devices. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 802-804 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A GaInAsSb/AlGaAsSb multiple-quantum-well diode laser structure consisting of Al0.6Ga0.4As0.05Sb0.95 cladding layers, Al0.3Ga0.7As0.02Sb0.98 confining layers, and four 15-nm-thick Ga0.87In0.13As0.12Sb0.88 quantum wells with 20-nm-thick Al0.3Ga0.7As0.02Sb0.98 barrier layers was grown by organometallic vapor phase epitaxy. These lasers, emitting at 2.1 μm, have exhibited pulsed threshold current densities as low as 1.2 kA/cm2. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1311-1313 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The near band edge photoluminescence (PL) of cubic GaN epilayers grown by radio frequency (rf) plasma-assisted molecular beam epitaxy on (100) GaAs is measured. Since the PL is excited with an unfocused laser beam it resembles the layer properties rather than the properties of micron-size inclusions or micro crystals. The low temperature PL spectra show well separated lines at 3.26 and 3.15 eV which are due to excitonic and donor-acceptor pair transitions (donor binding energy 25 meV, acceptor binding energy 130 meV). No emission above the band gap of the cubic phase is detected. PL results are confirmed by x-ray diffraction and atomic force microscopy which reveal only negligible contributions from hexagonal inclusions and micron size single crystals. The room temperature PL consists of an emission band at about 3.21 eV with a full width at half maximum of 117 meV. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4465-4468 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Single crystals of potassium sodium strontium barium niobate (KNSBN) and cobalt-modified KNSBN were prepared using the Czochralski technique. The ferroelectric hysteresis loops and the infrared reflectivity spectra were collected. Compared with the undoped KNSBN crystals, the cobalt-modified crystals have stable hysteresis loops, whose spontaneous polarization is about 0.17 C/m2 and coercive field strength is about 670 V/mm, but those of the undoped KNSBN crystals are about 0.04 C/m2 and 530 V/mm, respectively. The measured infrared reflectivities vary with the orientations of the dipole moments owing to the Co doping. The c axis becomes the most stable orientation of the dipole moments, and the polarization can be locked and does not recede when the cobalt-modified crystals are polarized into a single domain. © 1997 American Institute of Physics.
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2270-2276 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Period expansion of Co/C and CoN/CN soft x-ray multilayers has been investigated by x-ray diffraction and Raman spectroscopy. Below the anneal temperature of 400 °C, the period expansion (〈 12%) of Co/C multilayers is mainly caused by the graphitization of the amorphous carbon layers. By 500 °C, the crystallization and agglomeration of Co layers induce an enormous period expansion (∼40%). The period expansion of CoN/CN multilayers is only 4% at 400 °C, which is much smaller than that of Co/C multilayers. The interface patterns of the CoN/CN multilayers still exist even if they were annealed at 700 °C. The Raman spectroscopy analyses indicate that the formation of the sp3 bonding can be suppressed effectively by doping N atoms, and thus the period expansion is decreased considerably at annealing temperatures below 600 °C. The significant suppression of grain growth above 600 °C is believed to be attributed to the coexistence of hcp and fcc Co structures induced by interstitial N atoms, which cause the high-temperature period expansion decrease. The results also imply that the structural stability of Co/C soft x-ray multilayers can be significantly improved through doping N atoms.© 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: High-Z, laser heated hohlraums can be made thick enough to contain thermal radiation, yet thin enough to let out x rays 〉∼6 keV produced by hot, relatively dense blow-off plasma. We use such "thin wall hohlraums" to observe the physical location of hot, dense, laser produced hohlraum plasmas. This technique has allowed us to come to some understanding of laser transport/deposition, plasma stagnation, and bulk plasma filling. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3758-3760 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A large increase in the quantum efficiency (QE) and open-circuit voltage Voc of GaInAsSb thermophotovoltaic (TPV) devices is obtained by the use of an AlGaAsSb window layer compared with devices without a window layer. The TPV structure, grown on GaSb substrates by organometallic vapor phase epitaxy or molecular beam epitaxy, consists of a 1-μm-thick n-GaInAsSb base layer, a 3-μm-thick p-GaInAsSb emitter layer, a 100-nm-thick AlGaAsSb window layer, and a 25-nm-thick GaSb contacting layer. The band-gap energy of the lattice-matched GaInAsSb is 0.53–0.55 eV. The peak internal QE of the TPV cells with the window is 〉90%, compared with less than 60% for those without the window. At a short-circuit current density of ∼1000 mA/cm2, Voc of ∼300 meV is obtained for cells with the window layer, compared with less than 220 meV without the window layer. These increases are attributed to a substantial decrease in the surface recombination velocity with the window layer. Based on a standard calculation, the electron diffusion length in the p-GaInAsSb layer is at least 5 μm. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food lipids 4 (1997), S. 0 
    ISSN: 1745-4522
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: Triplicate batches of chicken breast (CB), chicken thigh (CT), fresh ground beef (GB), ground beef patties frozen 2 years (BP), veal (V), pork roast (PR), ground pork frozen 1 year (GP) and lamb (L) were homogenized and subjected to each of five 2-thiobarbituric acid reactive substances determination methods (n = 3 TBARS determinations/sample/method/replicate). Distillation methods resulted in higher (p 〈 0.05) TBARS values than extraction methods for all types of samples. TBARS ranges were CB=0.21–0.55; CT=0.21–0.40; GB=0.26–0.89; BP=1.14–4.00; V=0.18–0.82; PR=0.67–2.09; GP=1.17–4.01; and L=0.58–2.18. Distillation methods in which antioxidant was added did not consistently produce lower TBARS than distillation without antioxidant. Distillation methods produced TBARS approximately 2 times those produced by extraction methods in less oxidized samples (CB, CT, GB, V); distillation methods produced TBARS 2.75 times those produced by extraction methods in more oxidized samples (BP, PR, GP). Recoveries were quite different (ranging from about 65% to 95%) for the various methods indicating the need to run both standard curves and recovery rather than using published conversion factors in TBARS calculations.
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