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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3978-3981 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of EC−0.22, EC−0.28, EC−0.45, and EC−0.54 eV in chromium-doped samples. The trap of EC−0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175 °C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1664-1669 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Effects of ion irradiation on oxidation of silicon at a temperature as low as 130 °C in an argon and oxygen mixed plasma excited by electron cyclotron resonance interaction have been investigated. The growth rate of the oxide films increases with increasing incident energy and flux of argon ions, and the thickness increases proportionally to the root square of the oxidation time, which suggests that the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. Effects of substrate bias on the oxidation characteristics have been also investigated. The growth rate increases with increasing positive bias, and the growth kinetics deviate from diffusion limited with increasing thickness. The bias dependence of the growth rate is caused by drift of negative oxidants enhanced by the electric field established in the oxide films. Moreover, it is shown that the electrical properties of the oxide films are improved by applying positive substrate bias. The improvement is due to a reduction of irradiation-damage in the initial oxidation stage. On the basis of the experimental results, it is concluded that the reduction of the incident energy and the flux of argon ions in the initial oxidation stage is essential to improve electrical properties of the oxide films. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 520-524 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of EC−0.20 eV and EC−0.45 eV, and a hole trap of EV+0.34 eV. These three levels correspond to the transitions between four charge states of interstitial vanadium. Furthermore, an electron trap of EC−0.49 eV is observed near the surface region of n-type samples etched with an acid mixture containing HF and HNO3. The origin of the trap has precisely been investigated by isochronal anneals and various chemical treatments. From these investigations, it is found that the trap is due to a complex of interstitial vanadium with hydrogen introduced by chemical etching.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5262-5264 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is demonstrated that deep states in silicon on sapphire (SOS) films can be evaluated by transient-current spectroscopy (TCS). In the TCS spectra, a broad peak extending over 100–200 K was observed for the 6000-Å-thick n-type SOS film. Assuming the value of capture cross section to be 10−15 cm2 and independent of temperature, the density distribution of deep states was estimated. The density distribution shows a peak of 1.2×1012 cm−2 eV−1 at EC−0.25 eV. Raman backscattering spectroscopy was also performed to evaluate the stress in the silicon film. It was concluded that the defects detected by TCS should be caused by the compressive stress of 6.2×108 Pa in the silicon film. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1653-1655 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950–1200 °C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600–800 °C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10−3 exp(−1.55/kT) cm2 s−1.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2803-2808 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hole traps of configurationally metastable iron-boron pairs in p-type silicon are studied using deep level transient spectroscopy, thermally stimulated capacitance, and single shot techniques combined with minority-carrier injection. Two levels at EV+0.53 and 0.48 eV are observed as the metastable pairs after the injection at 150 K. The level at 0.53 eV consists of two traps vanishing with different decay rates at around 220 K, while the level at 0.48 eV annihilates with simple exponential form. The decay rate for each trap has a thermal activation energy of ∼0.7 eV and shows a single jump process of interstitial iron from one configuration to another. These new traps of iron-born pairs are discussed with the aid of configuration-coordinate description within the framework of the simple ionic model.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3828-3831 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV+0.31 and EV+0.41 eV. The trap of EV+0.41 eV is a donor due to interstitial iron. The trap of EV+0.31 eV, due to a complex of interstitial iron and hydrogen, is observed in the sample etched chemically with an acid mixture containing HF and HNO3 and annihilates after annealing at 175 °C for 30 min. It is demonstrated that interstitial 3d transition metals such as vanadium, chromium, and iron tend to form complexes with hydrogen in n-type silicon, and the complexes induce donor levels below the donor levels of the isolated interstitial species. This trend is related to the interaction between the metals and hydrogen in the complexes. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5480-5483 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth kinetics of cobalt silicide layers formed by ion beam irradiation was investigated at a temperature between room temperature and 100 °C. The CoSi phase was identified by x-ray diffraction of Co/Si samples irradiated with 25 keV argon ions to a dose of 2.0×1015 cm−2. The number of intermixed silicon atoms in the CoSi layers was evaluated as a function of dose, dose rate, and nuclear energy deposition rate at the Co/Si interface for samples irradiated with 40 keV focused silicon ion beams. The growth is shown to be diffusion-limited and attributed to radiation-enhanced diffusion with an activation energy of 0.16 eV. The number of intermixed silicon atoms is approximately proportional to the nuclear energy deposition rate at the initial Co/Si interface, while it is independent of dose rate, which shows that the CoSi phase is formed without contribution of the sample heating caused by irradiation. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Springer
    Wood science and technology 1 (1967), S. 26-44 
    ISSN: 1432-5225
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Maschinenbau
    Beschreibung / Inhaltsverzeichnis: Zusammenfassung Die Möglichkeit, Mikrotom-Längsschnitte zur Prüfung der Längsschwindung zu verwenden, wurde an Hoop Pine (Araucaria cunninghamii Ait.) geprüft. Dabei zeigte sich, daß die Längsschnitte beim Schneiden verschoben werden, was die nachfolgende Schwindung beeinflußt. Nachdem der Schnittwinkel des Mikrotommessers vergrößert worden war, konnten die Schnitte ohne Veränderung der Längsabmessungen abgetrennt werden. Das Längsschwindungs-Verhalten solcher Schnitte von über 80 μm Dicke unterschied sich nur wenig von demjenigen dickerer, gesägter Proben. Messungen der Längsschwindung mit Hilfe des beschriebenen Verfahrens zeigten, daß sehr dünne Schnitte (40 μm) eine größere Längsschwindung aufweisen als gesägte Schnitte. Die teilweise Delignifizierung mit Natrium Chlorit erhöhte ebenfalls die Längsschwindung. Die Längsschwindung blieb während aufeinanderfolgender zyklischer Feuchtigkeitsänderungen reproduzierbar, war aber nicht umkehrbar. Die Länge einer Probe war, bei gleichem Feuchtigkeitsgehalt während der Desorption geringer als während der Adsorption. Es darf als wahrscheinlich angesehen werden, daß die Längsschwindung des Holzes deutlich durch Spannungen beeinflußt wird, die sich beim Trocknen des Holzes innerhalb der Zellwand entwickeln.
    Notizen: Summary The possibility of using microtomed longitudinal sections of wood for the study of longitudinal shrinkage has been investigated using hoop pine (Araucaria cunninghamii Ait.). Cutting of the sections was shown to distort them and to affect their subsequent shrinkage. However, by increasing the inclination angle of the microtome knife, sections could be cut without change in longitudinal dimensions. The longitudinal shrinkage behaviour of such sections more than 80 μm thick was little different from that of thicker sawn specimens. Measurements of longitudinal shrinkage using this technique showed that very thin sections (40 μm) had greater longitudinal shrinkage than sawn wood. Partial delignification with sodium chlorite also increased longitudinal shrinkage. The longitudinal shrinkage was reproducible over successive cycles of moisture content change but not reversible, the length of a specimen at a given moisture content being less during desorption than at the same moisture content during adsorption. It is considered likely that the longitudinal shrinkage of wood is markedly affected by stresses which develop within the cell wall as the wood dries.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Springer
    Wood science and technology 21 (1987), S. 111-120 
    ISSN: 1432-5225
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft , Maschinenbau
    Notizen: Summary This paper deals with the relationships among the physical, anatomical and psychological properties of wood surfaces which play an important role in end-uses. Visual and tactile impressions of wood surfaces are partially governed by the surface profile, and were expressed in terms of roughness values. Sensory warmth of wood surfaces and thermal behavior at the hand/wood interface were measured when the surface was brought into contact with a hand. The warmth is highly correlated to the thermal conductivity of wood and to heat flow rate across the hand/wood interface. Resilience of balls with various rigidities impacting on wood surfaces was investigated in relation to hardness. It is suggested that hardness and resilience are governed by different mechanisms.
    Materialart: Digitale Medien
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