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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3616-3623 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of ZnSe/ZnTe multiple quantum well-based pseudo-ohmic contacts to p-ZnSe was investigated using transmission electron microscopy and high-resolution transmission electron microscopy. In the case of samples consisting of five ZnSe/ZnTe multiple quantum wells, both pure edge Lomer dislocations and 60° dislocations were identified at the interface between the ZnSe/ZnTe multiple quantum wells and the ZnTe overlayer, along with partial dislocations bounding stacking faults. The dominant dislocations at the interface are Lomer dislocations. In the case of samples grown under group II-rich conditions, the interface exhibits corrugations. At the top and bottom of the corrugations, the Lomer dislocations are dominant and in the slope of the corrugations, 60° dislocations are dominant. In the case of samples grown using migration-enhanced epitaxy, V-shaped defects consisting of three dislocations associated with two stacking faults are formed. The total Burgers vector of the V-shaped defects is a〈100〉. The increasing total thickness and the number of ZnSe/ZnTe multiple quantum wells leads tend to make the dominant defects dissociated 60° dislocations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1196-1200 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ion-channeling methods, the thermal stability of crystallinity for heavily Ga-doped ZnSe epitaxial layers grown on GaAs (100) substrates was investigated. Some distinctive features were found: The crystallinity of as-grown heavily Ga-doped ZnSe is similar to that of undoped ZnSe. After thermal annealing at 450 °C, the crystallinity of Ga-doped ZnSe is degraded, although that of undoped ZnSe is not significantly changed. It is expected that doped Ga atoms are displaced from the regular lattice sites after annealing. The degree of this degradation depends on the crystallinity of the as-grown Ga-doped ZnSe itself. These results indicate the degradation of the crystallinity for Ga-doped ZnSe epilayers is mainly caused by the interaction between the doped Ga atoms and grown-in point defects in the epitaxial layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 80 (1976), S. 33-37 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3421-3423 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl vapor-phase etching technique, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. Three kinds of distinctive etch pits correspond to three different types of threading dislocations, edge, mixed, and screw types. Photoluminescence intensity increases with the decrease in the number of etch pits corresponding to mixed and screw dislocations. The number of etch pits corresponding to edge dislocations, however, did not change. We concluded, therefore, that threading dislocations having a screw-component burgers vector act as strong nonradiative centers in GaN epitaxial layers, whereas edge dislocations, which are the majority, do not act as nonradiative centers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3893-3895 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the gain characteristics of gain-guided quantum well II–VI laser diodes by measuring the amplified spontaneous emission spectra under several pulsed conditions. The temperature rise during one current pulse affects the gain characteristics and the L-I characteristics. The net modal gain at constant peak current increases with the pulse width. The peak gain for long pulses shows a superlinear dependence on injection current. In this case, the L-I curve is very steep above threshold and sometimes shows an internal quantum efficiency of more than unity. This leads to an underestimation of the internal cavity loss giving a value inconsistent with the one obtained from the gain spectra. With short pulse currents (〈200 ns), the peak gain shows a weak sublinear dependence on injection current. The cavity losses obtained from the gain spectra and the L-I characteristics at short pulses are consistent. As a result, we obtain the intrinsic gain characteristics of gain-guided quantum well II–VI laser diodes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1824-1826 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structure of optically degraded ZnCdSe quantum wells was investigated using transmission electron microscopy. The defects were composed of the dislocation dipoles with a Burgers vector of b=−(a/2)[101] inclined at 45° to the (001) plane. The dislocation dipoles consist of two segments aligned along the [11¯0] direction and the [120] direction. The [11¯0] dipole segments lying in the (111¯) plane were developed by the recombination-enhanced dislocation glide process, while the [1¯2¯0] dipole segments lying in the (2¯11) plane were developed by the recombination-enhanced dislocation climb process. Both processes operate simultaneously. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 147 (2002), S. 0 
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Background Neurogenic components, such as neurotrophic factors and neuropeptides, are probably involved in the pathogenesis of atopic dermatitis (AD) via the neuroimmunocutaneous system. Numerous in vitro and in vivo studies have shown that nerve growth factor (NGF), the best-characterized member of the neurotrophin family, modulates the synthesis of the neuropeptide substance P (SP), both of which may be associated with the pathogenesis of human allergic diseases. Objectives To evaluate the levels of NGF and SP in the plasma of patients with AD and to examine their possible correlation with disease activity. Methods We measured plasma levels of NGF by an immunoenzymatic assay and of SP by aradioimmunoassay in 52 patients with AD, and compared them with 35 normal non-atopic controls. The severity of the disease in AD patients was evaluated using validated clinical scoring systems. Results Patients with AD had significant increases in plasma levels of NGF and SP compared with controls (P 〈 0·0005 and P 〈 0·0001, respectively). A positive correlation between the plasma levels of NGF and SP was found in AD patients (correlation coefficient, Cc = 0·920, P 〈 0·0001). There was a significant correlation of plasma NGF and SP levels with disease activity evaluated using three different scoring systems: the grading system of Rajka and Langeland (P 〈 0·001 and P 〈 0·01, respectively), the objective Severity Scoring of AD (Cc = 0·656, P 〈 0·005 and Cc = 0·752, P 〈 0·0005, respectively) and the Eczema Area and Severity Index (Cc = 0·740, P 〈 0·001 and Cc = 0·765, P 〈 0·005, respectively). Conclusions These data represent the first reported evidence of increased plasma levels of NGF and SP in an allergic human skin disease. They suggest that these neurogenic factors systemically modulate the allergic response in AD, probably through interactions with cells of the immune-inflammatory component. In addition, NGF and SP may be useful markers of disease activity in patients with AD.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Chromatography A 608 (1992), S. 79-83 
    ISSN: 0021-9673
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface & Coatings Technology 43-44 (1990), S. 813-820 
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 23 (1987), S. 436-448 
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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