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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1952-1955 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A CuO/MgO epitaxial artificially superstructured film [CuO(50 A(ring))/MgO(40 A(ring))]40 was successfully grown and its structure was studied by x-ray diffraction (XRD). The film was found to have a texture in which the (111) planes of monoclinic CuO and the (001) planes of cubic MgO were layered perpendicular to the film plane. Its lateral structure was revealed by precession photographs where the CuO [101¯] axis is oriented approximately along the MgO [100] axis in the film plane. The XRD pattern, observed over a wide range of scattering vectors perpendicular to the film plane, was carefully analyzed by an extended step model. The fluctuation of the superlattice period was estimated to be as small as 1 A(ring).
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1189-1193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mössbauer spectra of 57Fe-doped polycrystalline CuO/Al2O3 multilayers (CAOs) show magnetic ordering at liquid helium temperature. The Néel temperature of a CAO with thin CuO layers is lower than that of bulk CuO judged from the temperature dependence of the Mössbauer spectra. A paramagnetic component was observed in all magnetic susceptibility measurements of the multilayers. The component also exists in both polycrystalline and epitaxial CuO/MgO multilayers. We have found that the component was localized at interfaces and derived from the spin fluctuation effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6241-6243 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization process and magnetic properties of Fe–P–C–Cu–Ge–Si amorphous alloys were investigated. After annealing above the crystallization temperature, the bcc Fe particles, with nanoscale grain size, precipitated in the amorphous alloy for a wide P concentration range. The volume ratio of the bcc Fe phase to amorphous was about 30%. The mixed phase of these alloys shows a drastic decrease of coercive force (Hc) and particle diameter (d) as P concentration increases. The lowest Hc was obtained for Fe78P16C2Cu0.5Ge3Si0.5, and Hc and d were 1.8 A/m and 16 nm, respectively. Observation by in situ Lorentz scanning electron microscopy (SEM) revealed that the width of magnetic domains were 0.01 or 0.1 mm and the domain walls with smaller bcc Fe particles moved in a weaker magnetic field than those with larger ones. So the low Hc is attributed to the decrease of magnetocrystalline anisotropy caused by fine structures. The core loss of fine crystalline Fe–P–C–Cu–Si–Mo alloy, W14/50, was 0.22 W/kg after annealing under a magnetic field of 2.4 kA/m.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Elastic and thermal properties of Au/Ni superlattices have been investigated by x-ray diffraction on a synchrotron radiation source at the Photon Factory. An elastic response of [Au(10 A(ring))/Ni(10 A(ring))]50 to hydrostatic pressure generated by a diamond anvil cell has been measured in the layer-stacking direction. Its compressibility obtained from the pressure dependence of its superlattice period (Λ vs P) shows an anomalously small value compared with either bulk Au or Ni metal. Linear thermal expansions has also been measured by a similar method (Λ vs T). A significant anisotropic behavior between the layer-stacking and in-plane direction was found in both [Au(10 A(ring))/Ni(10 A(ring))]50 and [Au(4 A(ring))/Ni(4 A(ring))]210.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 632-634 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact electron cyclotron resonance (ECR) ion source (compact ECRIS) for the mass spectrometer was tested. A feature of the compact ECRIS is its size, i.e., inner diameter: 22.5 mm (1 in. tube), length: 56 mm. ECR plasmas in this ion source using argon gas were discharged by high-frequency microwaves, 7–10 GHz. It was confirmed that the plasma was generated in the pressure range 30–410 mPa at the low input power of 5 W. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1666-1667 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The characteristics of argon electron cyclotron resonance plasma discharged by 7.0, 8.0, and 9.4 GHz microwaves were investigated. Experiments were conducted in a fixed magnetic field. It was found that the electron temperatures Te exhibited a trend of Te7.0〈Te8.0〈Te9.4 (suffixes represent the discharge microwave frequencies). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 866-868 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Argon electron cyclotron resonance plasma characteristics discharged by 7.0, 8.0, and 9.4 GHz microwaves are measured at 0.013 and 0.080 Pa in a cylindrical chamber. The plasma densities and electron temperatures were found to be almost independent of the microwave frequency at 0.013 Pa, whereas clear differences were seen at 0.080 Pa. At 0.080 Pa, the plasma densities were observed to increase with the increase in the discharge frequency. Electron temperatures at 0.080 Pa also appeared to become higher with the increase in discharge frequency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2406-2409 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes the performance of a four-circle diffractometer installed at the Photon Factory for extensive use with synchrotron radiation for various investigations in the field of solid state physics. Its main part is based on a Huber 5020.4 type diffractometer with a crystal analyzer designed for vertical diffraction plane attitude. The diffractometer is mounted on a carriage table, which can precisely adjust the position of the diffractometer with respect to the incident beam monochromatized by successive reflection from a pair of Si(111) crystals. With a perfect crystal used as the analyzer the large size of the ω and 2θ circles enables us to make high resolution (ΔQ/Q∼10−4) measurements of x-ray scattering intensity distribution from a single crystal. The large space in the center of the diffractometer permits us to put a pressurizing cell or a cryostat on the φ table for scattering measurements at controlled pressures and temperatures. Selected examples of the application are presented.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Synchrotron radiation (SR) has been proved to be a powerful tool for x-ray study under pressure. So far, an energy dispersive method has been used because the intensity of the monochromatized beam is not strong enough for the very small sample under pressure, even if SR is used. In order to perform an angle-dispersive method under pressure, we need to use one- or two-dimensional detectors. Recently, a photostimulable fluorescence plate, named an imaging plate (IP), has been successfully used as an x-ray detector at the Photon Factory. We tried to combine a diamond anvil cell with SR and IP. Exposure time on IP for the diffraction from Ag in a diamond anvil cell at 22 keV is shorter than that on an x-ray film by a factor of 50. Resolution of IP (180 μm) is not a severe problem where IP is apart from the sample by 150 mm. Data on IP are digitally treated, so that it is easy to integrate the intensity along the Debye ring. Then, the reliability becomes more than 10 times better than a one-dimensional scan. Accuracy in determination of lattice constants and integrated intensity will be presented.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3256-3258 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of (Yb,Tb,Bi)3Fe5O12 show excellent characteristics of the Faraday rotator at the wavelength of 1.3 μm; the rotation is −1800 deg/cm, insertion loss 0.3 dB, isolation 38 dB, and the temperature dependence of the Faraday rotation is 0.060 deg/K at room temperature. The films are grown epitaxially on the (Gd,Ca)3(Ga,Mg,Zr)5O12 substrates, from the melt in the flux PbO/B2O3/Bi2O3. The melt contains rare-earth ions (R=Y,Gd,Er,Dy,Tm,Yb,Lu) as c-site components of rare-earth iron garnets, and Fe and Ga+Al as a- and d-site components. The obtained film thickness is in the range 300–400 μm without appreciable defects on the substrate, with a 2-in. diameter. This technology will lead to the efficient production of the optical isolator used in optical systems.
    Type of Medium: Electronic Resource
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