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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 328-336 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After terminating electrical stresses, the generation of interface states can continue. Our previous work in this area indicates that the interface state generation following hole injection originates from a defect. These defects are inactive in a fresh device, but can be excited by hole injection and then converted into interface states under a positive gate bias after hole injection. There is little information available on these defects. This article investigates how they are formed and attempts to explain why they are sensitive to processing conditions. Roles played by hydrogen and trapped holes will be clarified. A detailed comparison between the interface state generation after hole injection in air and that in forming gas is carried out. Our results show that there are two independent processes for the generation: one is caused by H2 cracking and the other is not. The rate limiting process for the interface state generation after hole injection is discussed and the relation between the defects responsible for this generation and hole traps is explored. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2967-2977 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of interface states plays an important role in the degradation of submicrometer devices. Previous attention was mainly focused on the conversion between interface states and their precursors. The total number of defects, which is the sum of precursors and interface states, is often implicitly assumed to be constant. However, recent work indicates that this number could be increased. The mechanism for the generation of new precursors is still not clear and the objective of this article is to throw light on it. The work is concentrated on investigating the roles played by hydrogen and the holes trapped in the oxide. It is found that, although the H2 or the trapped hole alone does not create precursors, their simultaneous presence causes the damage. The hydrogen species can be either supplied externally or released within the device. The generation is thermally activated, but saturates at a defect-limited level. The generation kinetics is studied and the rate limiting mechanism is discussed. Efforts have been made to unveil the differences between the generated precursors and those originally in the device, in terms of their existing forms, thermal stability, annealing behavior, dependence on the hole fluence, and the hydrogen involvement. It is concluded that they originate from different defects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1883-1886 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An optical-electronic method was developed for measurement of falling liquid film thicknesses. The method is based on the postulate that a sheet light beam passing tangentially through a vertical liquid film on a cylinder will be blocked by the falling liquid film. Hence, when the beam is much wider than the film, the output of a photodiode probe which is located on the opposite side of the cylinder from the light source will be reduced by an amount proportional to the film thickness. The shadow of the transient film shape will also appear on a screen behind the falling film. Therefore, the variation of the amplitude of the film waves can be measured from the output of the photodiode and the average film thickness can be measured from pictures of the shadow using computer aided image analysis. The average film thickness measured agrees well with commonly accepted empirical equations. The maximum relative deviation between the experimental and calculated results is 18.5% with a standard deviation of 4.34×10−2 mm. Compared with popular conductance parallel-wire probes, this method has the advantages of convenience, noninvasive, higher spatial and temporal resolution, smaller hysteresis and it does not disturb the model's surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    ISSN: 1474-8673
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Chemistry and Pharmacology , Medicine
    Notes: 1 The aim of this study was to investigate the co-localization of histamine and dopamine-β-hydroxylase in the superior cervical ganglion of guinea-pig and release of histamine from cardiac sympathetic terminals in guinea-pig isolated atrium. 2 Histidine decarboxylase (a histamine-synthesizing enzyme) mRNA signals were detected in the neurones of superior cervical ganglion of guinea-pig by in situ hybridization. The results of double-labelled immunofluorescence further confirmed the co-localization of histamine and dopamine-β-hydroxylase in the large principle neurons and small intensely fluorescent cells in the superior cervical ganglion. The immunoreactivities of both histamine and dopamine-β-hydroxylase were significantly attenuated after 6-hydroxydopamine-induced lesion of sympathetic nerves. 3 The refractory electrical field stimulation caused the release of histamine from cardiac sympathetic terminals of guinea-pig isolated atria (112.14 ± 40.34 ng ml−1), which was significantly attenuated to 35 ± 15.57 ng ml−1 by reserpine pretreatment. Following administering compound 48/80, a mast cell degranulator, electrical field stimulation induced a dramatic increase of endogenous histamine release from isolated atria (303.57 ±72.93 ng ml−1). When compound 48/80 was added to the reserpine-treated atria, the release of histamine induced by field stimulation was decreased to 207.14 ± 76.39 ng ml−1. 4 These results provide novel evidence that histamine co-exists with noradrenaline in sympathetic nerves and might act as a neurotransmitter to modulate sympathetic neurotransmission.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Grass and forage science 59 (2004), S. 0 
    ISSN: 1365-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The grazing behaviour by sheep, after the loss of the temporary incisors and before their replacement with the permanent incisors, was compared with that after the first pair of permanent incisors had completely developed in grazing experiments, conducted from June to September 2001, with three Suffolk castrated male sheep, born in late-March 2000. A new method was developed to investigate bite mass and bite force, using hand-constructed swards, which were composed of groups of four (4L), eight (8L), twelve (12L), sixteen (16L) and twenty (20L) leaves of cocksfoot (Dactylis glomerata) arranged 15 cm apart. Each group of leaves was attached to a separate three-directional load cell.The period of time between loss of temporary incisors and the complete eruption of permanent incisors was c. 1 month. The number of bites per group of leaves increased with increasing leaf density. The number of bites per group of leaves was higher after the loss of temporary incisors than with the permanent incisors. The number of leaves per bite and dry-matter (DM) intake per bite were almost twice as great with permanent incisors than after the loss of temporary incisors; DM intakes per bite force were 3·9–4·9 mg N−1 and 1·7–2·6 mg N−1 respectively. After the loss of temporary incisors, the proportion of forward-direction forces accounted for 0·805 of the forces in the 4L treatment and 0·155–0·317 of the forces in the 8L–20L treatments. In contrast, the proportion of forward-direction forces accounted for only 0·292 in the 4L treatment and 0·026–0·163 in the 8L–20L treatments with permanent incisors. The angles of bite forces were almost the same (54·7–56·3°) when sheep used a forward direction, and were 51·3–57·3° when sheep used a backward direction.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 271-273 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudobinary Pr1−xTbx(Fe0.6Co0.4)2 (0≤x≤0.4) cubic Laves single phases have been synthesized by melt spinning and subsequent annealing. Their structure, magnetic properties and stability have been investigated. The composition, at which the anisotropy of Pr1−xTbx(Fe0.6Co0.4)2 is compensated, is close to x=0.1. The spontaneous magnetostrictions λ111 of Pr0.9Tb0.1(Fe0.6Co0.4)2 and Pr0.8Tb0.2(Fe0.6Co0.4)2 are larger than 1500×10−6 and 1900×10−6, respectively. Pr1−xTbx(Fe0.6Co0.4)2 (0.1≤x≤0.4) ribbon-based materials with 3% epoxy resin combine high magnetostriction with significant magnetic coercivity. Pr0.9Tb0.1(Fe0.6Co0.4)2 is a promising magnetostrictive material. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4186-4188 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. © 2001 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3847-3851 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline Bi nanowires with diameters ranging from 20 to 70 nm were prepared by electrodeposition using nanoporous aluminum oxide membranes rather than the more usual track-etched polycarbonate membranes. X-ray diffraction and selected area electron diffraction investigations revealed that the nanowires are essentially single crystalline and highly oriented. The temperature dependence of zero-field resistance of different diameter nanowires indicated that these Bi nanowires undergo a semimetal–semiconductor transition due to two-dimensional quantum confinement effects. The resistance maximum was observed at 50 K in zero magnetic field for 20 nm Bi nanowires, while the resistance minimum at 258 K for 50 nm Bi nanowires, due to the quantum size effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 477-481 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of pressure on the microstructure of α-Fe/Sm2(Fe, Si)17Cx nanocomposite magnets has been studied by annealing amorphous Sm8Fe85Si2C5 alloy under pressures up to 6 GPa at 923 K. The high-pressure experiments were carried out in a belt-type apparatus. Experimental results show that, with increasing pressure from normal pressure to 6 GPa, the grain size of the α-Fe and Sm2(Fe, Si)17Cx phases in the α-Fe/Sm2(Fe, Si)17Cx nanocomposites decreases, from 30.6 to 6.4 nm for the former and from 28.7 to 5.8 nm for the latter. The volume fraction of Sm2(Fe, Si)17Cx increases as pressure increases. The α-Fe/Sm2(Fe, Si)17Cx nanocomposite magnets prepared under 4 GPa have a significant increase in both coercivity and remanent magnetization as compared to those prepared under normal pressure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6403-6407 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a violation of the normal Raman selection rule in the resonant Raman spectra of interface (IF) phonon modes of the ultrathin (GaAs)4/(AlAs)2 superlattice. Contrary to the prediction of conventional theories, all four IF modes were observed in both (XX) and (XY) geometries. The result can be interpreted as a consequence of the deep penetration of the electron wave function in the GaAs wells into the AlAs barriers and a lack of definite parity of the electron wave function. Furthermore, our result indicates that conventional theory for bulk (thicker) systems may need to be modified and further developed to be applicable to ultrathin systems. © 2000 American Institute of Physics.
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