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  • 11
    Electronic Resource
    Electronic Resource
    Time-differential perturbed-angular-correlation and emission Moessbauer studies on 99Ru dispersed in YBa2Cu3O6.8 and YBa2Cu3O6 (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 10629-10634 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100026a029
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  • 12
    Electronic Resource
    Electronic Resource
    Adhesion between Te-based alloy films and fluorocarbon sublayers during the ablative hole opening process (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 865-872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359011
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  • 13
    Electronic Resource
    Electronic Resource
    Definite accumulation of enzymatically under-glycosylated IgA1 in rat glomeruli (1999)
    Melbourne, Australia : Blackwell Science Asia Pty. Ltd.
    Nephrology 5 (1999), S. 0 
    Details
    ISSN: 1440-1797
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1440-1797.1999.00088.x
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  • 14
    Electronic Resource
    Electronic Resource
    GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GaN was performed by low-pressure metalorganic vapor phase epitaxy using a mask-patterned GaN epitaxial layer on a (0001) sapphire substrate. GaN hexagonal microprisms of 5–16 μm in diameter, with smooth vertical facets and no ridge growth, were fabricated on a (0001) sapphire substrate. This vertical {11¯00} facet of GaN was parallel to a {112¯0} face of the sapphire substrate. Both the use of an epitaxial GaN layer on the sapphire substrate and low working pressure contributed to obtaining smooth top and vertical facet surfaces. Also, the stripe structures of GaN were obtained that had a rectangular cross section. Moreover, the selection of the mask-patterning direction was found to be important because of the 30° rotation of the crystallographic orientation between the GaN layer and the sapphire substrate. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119379
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  • 15
    Electronic Resource
    Electronic Resource
    Magnetoresistance, Hall effect, and thermoelectric power in spin valves (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5927-5932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparison of the magnetoresistance (MR) on two groups of spin-valve multilayers, NiO/NiFe/Cu/NiFe/Cu/NiO and NiO/NiFe/Cu/NiFe/Cu, has been made in order to investigate the possibility of the enhanced specular scattering at NiO/metal interface. No clear difference in MR between the two systems has been found, suggesting that the enhancement of specular scattering at interfaces is not the origin of the large MR. For the field direction almost perpendicular to the plane, we found a sensitive angular dependence of MR along with a large unidirectional anisotropy. To sort out any specific characteristics of the spin-valve system compared to the multilayers, thermoelectric power and Hall effect have been investigated for the first time. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367457
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  • 16
    Electronic Resource
    Electronic Resource
    In situ observation of silicon hydrides on Si(100) surfaces during synchrotron-radiation-stimulated Si2H6 gas source molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon hydrides (SiHn) on the Si(100) surface during synchrotron-radiation (SR) stimulated Si2H6 gas source molecular beam epitaxy has been observed in situ at low temperatures (≤400 °C), by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates. At high temperatures (400 °C, 370 °C), SiH is a dominant surface species, while with temperature decrease from 275 to 50 °C, the number of SiH decreases, and, on the other hand, SiH2 and SiH3 appear and increase. This result explains the change of reflection high-energy diffraction pattern from 2×1 to 1×1. The SiH in the bulk network has not been observed. SR irradiation on the film at 140 °C after deposition shows that SiH2 and SiH3 are easily decomposed to SiH and that SiH decomposes much more slowly than SiH2 and SiH3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114346
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  • 17
    Electronic Resource
    Electronic Resource
    IgG2 Deficiency Associated with Defects in Production of Interferon-Gamma; Comparison with Common Variable Immunodeficiency (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Scandinavian journal of immunology 41 (1995), S. 0 
    Details
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We report a novel mechanism of IgG2 deficiency. Several investigators have reported patients with IgG subclass deficiencies due to homozygous deletion of immunoglobulin heavy chain constant region genes. However, it is unclear what mechanism is responsible for IgG subclass deficiency in cases where no gene deletions have been detected and which are accompanied by recurrent infections due to aberrant immunoregulation. In the present study, we have focused our attention on production by peripheral blood mononuclear cells (PBMCs) of interferon-gamma (IFN-γ), which is known to induce IgG2 expression. PBMCs from four patients with IgG2 deficiency and their families were studied. Mitogen-induced IFN-γ production by PBMCs was decreased in all of the patients, although the proliferative responses of PBMCs and the percentages of CD3, CD4, and CD8 T cell subsets were not decreased. IgG2 production by PBMCs was restored upon addition of IFN-γ and mitogen to the PBMCs of the patients with IgG2 deficiency though it was not restored in the patients with common variable immunodeficiency. We conclude that defects in production of IFN-γ play an important role in IgG2 deficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3083.1995.tb03544.x
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  • 18
    Electronic Resource
    Electronic Resource
    Reduction of Staphylococcus aureus in atopic skin lesions with acid electrolytic water - a new therapeutic strategy for atopic dermatitis (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 52 (1997), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The subjects studied were 22 pediatric patients newly diagnosed with atopic dermatitis (AD); 11 were treated with acid electrolytic water (AEW), which has a strong bactericidal activity (AEW group), and the other 11 with tap water (placebo group). AEW or tap water, 1 ml/cm2 (body surface area), was sprayed on their skin lesions with a spray gun each twice a day for a week. There were no significant differences between the two groups in regard to sex, age, serum IgE, peripheral eosinophil counts, grading scores of AD, and duration of AD. The study was designed as a randomized, placebo-controlled, double-blind clinical trial. Colony counts of Staphylococcus aureus on skin lesions in the AEW group, both 3 min after spraying (P 〈 0.05) and after 1 week of skin treatment (P 〈 0.01), were significantly decreased as compared with colony counts before treatment, while there was no significant difference in the placebo group before and after treatment. Grading scores of AD also decreased in the AEW group (P 〈0.01), but not in the placebo group. Both the subjects' guardians' evaluation and a referee physician's evaluation of treatment effect were significantly higher in the AEW group than in the placebo group (P 〈 0.01). AEW may be potentially effective in preventing a staphylococcal chronic inflammation in AD because of its strong bactericidal activity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1997.tb02423.x
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  • 19
    Electronic Resource
    Electronic Resource
    MORPHOLOGICAL STUDIES RELATING TO THE FRACTURE STRESS AND FRACTURE TOUGHNESS OF SILICON NITRIDE (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 20 (1997), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— Microstructure and mechanical properties of HP (Hot Pressed), HP/GP (Gas Pressed), and HP/HIP (Hot Isostatic Pressed)—Si3N4 are studied using scanning electron microscopy, bending tests and the indentation fracture method. The grain diameter distribution is analyzed to clarify the relationship between microstructure and mechanical properties; and also the bending strength and fracture toughness. It is shown that bending strength increases with decreasing grain diameter. The results also show that a Hall—Petch type of relationship is obtained between grain diameter and fracture strength. The fracture toughness shows a linear relationship with 〈inlineGraphic alt="inline image" href="urn:x-wiley:8756758X:FFE829:FFE_829_fu1" location="image_n/FFE_829_fu1.gif" extraInfo="missing"/〉, where σF= bending strength, β= a proportionality factor and da= average grain diameter, and is closely related to the aspect ratio of Si3N4 grains. It is concluded, from the morphological analysis, that a microstructure composed of Si3N4 grains, with both a small grain diameter and a large aspect ratio, is effective in improving both the fracture strength and fracture toughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1997.tb01527.x
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  • 20
    Electronic Resource
    Electronic Resource
    DAMAGE HEALING AND STRENGTHENING BEHAVIOUR IN INTELLIGENT MULLITE/SiC CERAMICS (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 18 (1995), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Fifteen kinds of mullite/SiC samples with different microstructures were prepared in order to examine the effect of Sic volume% and Sic grain size on mullite morphology and mechanical properties. Special attention was paid to the effect of heat-treatment on fracture stress. It is shown that these materials have damage self-healing characteristics. The best mullite/SiC system, within the given test conditions, is 20% by volume of Sic, having a grain sue of 0.56 μm, and the best condition for damage healing is a 1 h heat treatment at 1300°C in an air atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1995.tb00924.x
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