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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6677-6679 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A double layer Cr film structure has been prepared by sputter depositing Cr on single crystal Si substrates first without substrate bias and then with various substrate bias voltages. Without substrate bias, Cr{200} texture grows on Si at room temperature; thus the first Cr layer acts like a seed Cr layer with the {200} texture, and the second Cr layer, prepared with substrate bias, tends to replicate the {200} texture epitaxially. CoCrTa and CoNiCr films prepared on these double Cr underlayers, therefore, tend to have a {112¯0} texture with their c-axes oriented in the plane of the film. At the same time, the bias sputtering of the second Cr layer increases the coercivity of the subsequently deposited magnetic films significantly. Comparison studies of δM curves show that the use of the double Cr underlayers reduces the intergranular exchange interactions. The films prepared on the Si substrates have been compared with the films prepared on canasite and glass substrates. It has also been found that the magnetic properties are similar for films on canasite and on glass.
    Type of Medium: Electronic Resource
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  • 12
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoCrTa/Cr thin films were prepared by rf diode sputtering onto canasite and glass substrates at various bias voltages from two targets of different compositions (Co82.8Cr14.6Ta2.6 and Co86Cr12Ta2). While Auger depth profile analysis indicates that there is some broadening at the CoCrTa-Cr interface, x-ray fluorescence spectroscopy reveals that changes in alloy composition due to the resputtering processes are even more prominent. For both targets, as the substrate bias increases the Co content in the films declines, and the magnetization decreases. The maximum film coercivity appears to correlate to the final film composition. By investigating the results from both targets, it is concluded that the coercivity reaches a maximum when the film composition is in the neighborhood of Co84Cr13Ta3. Thus, to optimize the coercivity different bias voltages are required for each target. Excessive substrate bias, however, leads to films with low magnetization and coercivity.
    Type of Medium: Electronic Resource
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  • 13
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Abstract. Collagenase was used to prepare primary cell cultures from rainbow trout, Oncorhynchus mykiss (Walbaum), gills. Although difficult to subcultivate, one primary culture led to the development of a cell line, RTgill-W1. RTgill-W1 grew in the basal medium, L-15, supplemented with foetal bovine serum at between 5 and 10%, but not in L-15 alone. The cells have been passaged approximately 50 times over a 4-year period. At confluency, the cell shape was predominantly polygonal or epithelial-like. RTgill-Wl cultures were demonstrated by DNA staining with H33258 and by growth on agar to be contaminated with mycoplasma, but this contaminant was eradicated by treatment with mycoplasma removal agent (MRA) and BM cyclin.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 706-713 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Classical models of magnetic reconnection consist of a small diffusion region, which is bounded by two pairs of slow shocks. In these models, the plasma is accelerated across the shocks. It has long been postulated that violation of symmetry across the current sheet will lead to the formation of intermediate waves in the current sheet. These asymmetries are important properties of space plasma current sheets. Equally important in space plasmas is the presence of sheared flow across current sheets. In this study, the structure of steady-state reconnection is investigated in the presence of a shear flow across the current sheet with symmetric density and magnetic field strengths using two-dimensional magnetohydrodynamic (MHD) simulations. The results show that for sheared flow above the Alfvén velocity of the inflow regions no steady-state magnetic reconnection occurs. For sheared plasma flow below this critical velocity steady-state reconnection is obtained. A detailed examination of the Rankine–Hugoniot jump conditions reveals that each pair of slow shocks is replaced by a strong intermediate shock and a weak slow shock in the presence of shear flow.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 4759-4765 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The surfactant film bending elasticity can be described by a spontaneous curvature C0 and two elastic constants K and K¯ associated with the mean curvature and the Gaussian curvature, respectively. These parameters are very important in the determination of the structure of the dispersions stabilized by the surfactant (droplets or sponge-like structures). We have studied ternary mixtures of oil, water, and nonionic surfactants of different chain lengths. Depending on the temperature, the microemulsions are in equilibrium with excess oil (o/w structure), excess water (w/o), or both excess oil and water (bicontinuous). We present neutron scattering data from which we determine the microemulsion structure and, in the case of droplet structures, of the droplet polydispersity. These results, in combination with those from earlier experiments using ellipsometry, are used to estimate K¯.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 3808-3810 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of field-aligned plasma jets associated with magnetic reconnection is examined. It is found that the plasma jets are located slightly downstream of the magnetic separatrices and each plasma jet consists of two parts: (a) a slow-mode shock and (b) a fast-mode compressional structure. The slow shock accelerates the plasma and converts magnetic energy into flow energy and thermal energy. The fast-mode compressional wave, located immediately downstream of the slow shock, decelerates the plasma and converts part of the flow energy back into magnetic energy and thermal energy. The combined structure of slow shock and fast compressional wave leads to the formation of the narrow field-aligned plasma jet.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 675-678 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rate constants of low-energy electron attachment to BCl3 diluted in N2 are measured as a function of E/N at 1–11 Td, corresponding to mean electron energies at 0.4–1.0 eV. The negative ions produced by hollow-cathode discharges of either pure BCl3 or mixtures of BCl3 in N2 are mass analyzed to identify the products of electron attachment to BCl3. Only Cl− ion is found in the discharge media, although BCl−3 is observed at the applied voltage significantly lower than the breakdown voltage. The electron attachment processes of BCl3 are discussed.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1681-1683 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconducting arrays of Josephson junctions have been fabricated and tested as millimeter-wave oscillators at 77 K. Power levels in the microwatt range have been detected in the range of 90–160 GHz from arrays using from 350 to almost 60 000 YBa2Cu3O7 junctions. Monolithic log-periodic spiral antennas as well as quasioptical resonators have been used to enable power coupling. The arrays were also found to be bias tunable over ranges limited by the receiving apparatus.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2177-2179 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an extension of the bi-epitaxial Josephson junction process that permits the use of a variety of substrate materials and allows junctions to be placed at any level of a multilayer structure. The new materials, SrTiO3, MgO, and CeO2, serve as a base layer, a seed layer, and a buffer layer, respectively, and replace Al2O3, MgO, and SrTiO3 in the original bi-epitaxial process. This new process offers much more flexibility in designing a circuit. Bi-epitaxial junctions made with the new set of materials show much improved electrical properties, especially at 77 K. We attribute the improved electrical characteristics to a better thermal expansion match between the substrate and the thin-film layers. Important junction properties such as critical currents and junction resistances are compared to other types of grain boundary junctions.
    Type of Medium: Electronic Resource
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  • 20
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary metal-oxide-semiconductor transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O7−δ flux-flow transistors, and separately, Y1Ba2Cu3O7−δ superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.
    Type of Medium: Electronic Resource
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