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  • Artikel: DFG Deutsche Nationallizenzen  (196)
  • 1995-1999  (104)
  • 1910-1914  (92)
  • 11
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4115-4115 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To match the requirements for development of transformer cores with lower iron losses, many new materials are under development including amorphous materials, 6.5% Si–Fe sheets and thin gauged 3% Si–Fe sheets. Among these materials, the thin gauged 3% Si–Fe sheets are attracting attention due to their good magnetic properties and scientific interest. Arai et al. reported that the magnetic properties of the sheets were comparable to those of the amorphous materials and (110)[001] preferred orientation of the sheets are developed by tertiary recrystallization.1 The 100 μm thick 3% Si–Fe sheets were prepared via conventional metallurgical processes including melting and casting, hot rolling to 25 mmT at 1200 °C, first cold rolling to 0.5 mmT, intermediate annealing at 800 °C for 30 min, second cold rolling to 0.25 mmT, intermediate annealing at 800 °C for 30 min, final cold rolling to 100 μm and final annealing at 1200 °C for 1 h in a vacuum of 5×10−6 Torr. Among these processes, the cold rolling process is an important one because preferred orientation of the sheets was developed in the process. Nakano et al. reported that there was an optimum cold rolling ratio to get required magnetic properties of the sheets.2 Recently, we found that the reduction rate, i.e., number of passes, as well as reduction ratio affected the preferred orientation and magnetic properties of the sheets. The number of passes in the first cold rolling process was changed from 7 to 60 and B10 values of the final sheets were changed from 1.30 to 1.84 T according to the number of passes. From x-ray experiments, it was found that intensity of (110) peak in the cold rolled and annealed sheets strongly affected the magnetic properties of the final sheets. We will discuss the relationship between the reduction rate and preferred orientation, and magnetic properties of the thin gauged 3% Si–Fe sheets. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 12
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A tertiary crystal growth method was used to fabricate thin gauged 3% Si–Fe sheets in order to reduce the thickness of the sheets without deteriorating soft magnetic properties. During the investigation, the magnetic properties of final annealed sheets were found to be directly related to the magnetic properties of final cold rolled sheets. X-ray and transmission electron microscopy were used to understand the above relation. It was found that the fraction of (110) grains at the surface of the final cold rolled sheets significantly affected the final magnetic properties of the final annealed sheets. On the basis of the above argument, the final magnetic properties of the thin gauged Si–Fe sheets can be predicted by the B10 values of the final cold rolled sheets. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 13
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4994-4999 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nitrogen ions were implanted into ZnSxSe1−x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in a N2 ambient. Schottky structures employing the implanted p-type ZnSxSe1−x were fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current–voltage (I–V), current–voltage temperature (I–V–T), and high frequency capacitance–voltage (C–V) measurements. PL spectra showed a clear donor–acceptor pair (DAP) recombination at an energy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respectively, regardless of the postannealing temperatures. The diode conduction in forward bias proceeds by the combination of thermionic and tunneling emission. C–V measurement proved the maximum doping concentration to be around 1017 cm−3 after ion implantation. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 14
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2328-2333 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: p-i-n photodiodes were fabricated on nitrogen ion implanted undoped ZnSe/n-type ZnSe epilayers grown on n+GaAs (100) substrates by molecular beam epitaxy. To obtain a quasi-uniform p layer doping profile, nitrogen ions at multiple energies and ion doses were implanted at room temperature. The activation of implanted species was carried out by an optimized post-annealing in a nitrogen ambient. Optical studies were performed on the implanted/annealed devices by photoluminescence spectroscopy at 10 K, which indicated donor–acceptor pairs at an energy of 2.7 eV and its phonon replicas with 30 meV intervals. The circular p-i-n diodes with a 1 mm diam contact area showed a device breakdown voltage to be linearly dependent on the thickness of the undoped ZnSe epilayer. For p-i-n diodes fabricated on an initial 0.5 μm thick undoped ZnSe layer, an ideality factor of 1.19 and a reverse bias breakdown voltage of 12 V was observed. A large photocurrent, good linearity with light intensity, and low dark current were observed. A photocurrent/dark current ratio 〉105 was obtained at an illumination intensity of 100 mW/cm2. These devices exhibited a responsivity of 0.025 A/W at a wavelength of 460 nm through the top 200 Å thick metal contacts.© 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 15
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6614-6616 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: (Co1−xFex)Pt films were grown on a glass substrate by a rf sputtering and then annealed at 650–700 °C in a high vacuum. All the as-sputtered (Co1−xFex)Pt films deposited below 400 °C had a disordered structure and showed very low coercivities. With increasing the deposition temperature and Fe contents, the (111) texture was weakened in as-deposited (Co1−xFex)Pt ternary films. Vibrating sample magnetometer and x-ray diffraction data show that Co atoms in the L10 CoPt phase were substituted with Fe atoms. In-plane coercivities of these films decreased almost linearly with increasing Fe content which seemed to be due to the decrease of a crystalline anisotropy energy. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 16
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 469-471 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report in this letter the observation of visible photoluminescence (PL) at room temperature from hydrogenated nanocrystalline silicon (nc-Si:H)/amorphous silicon (a-Si:H) multilayers (MLs) prepared in a plasma enhanced chemical vapor deposition system without any postprocessing. The PL peak wavelength can be controlled, blueshifting from 750 to 708 nm, through reducing the width of the nc-Si:H sublayers from 4.0 to 2.1 nm. Quantum size effect in nc-Si:H sublayers of the ML is responsible for the emission above the band gap of bulk crystal Si. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 17
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 596-598 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a-Si:H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500–850 nm with two peaks located at about 630–680 and 730 nm, respectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction path is discussed in terms of the material structural characteristics, and a tentative explanation of the light emission mechanism is proposed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 18
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 698-700 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Three photoluminescence (PL) bands at 340–370, 400–430, and 740 nm were observed at room temperature in a-Si:H:O films fabricated by plasma enhanced chemical vapor deposition without any postprocessing. The violet-blue emission is very strong and stable, and its intensity is closely related to the oxygen content in the films, which can be controlled by the applied dc biases on the sample substrates during deposition. The first two PL peaks are ascribed to Si–O related species, and the last one to the quantum size effect of the nanocrystallites embedded in the a-Si:H:O matrix. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 19
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1608-1610 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the successful fabrication of flexible single crystal semiconductor structures. A highly selective etching solution allowed us to obtain large area foils and membranes of good structural integrity, using films of indium and silicone as flexible substrates. Photoluminescence and transmission measurements verified that the optical properties of these structures were preserved. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 20
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Journal of natural products 58 (1995), S. 82-92 
    ISSN: 1520-6025
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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