Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 3260-3265
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
To identify tantalum-related deep levels, deep level transient spectroscopy (DLTS) measurements were performed on Ta-implanted n-type 4H–silicon carbide. The DLTS spectra of samples implanted with stable 181Ta exhibit one dominating peak representing a trap energy of about ET=EC−0.67 eV. Due to superimposed signals of intrinsic defects, the exact value depends on the annealing conditions. To achieve a definite assignment of this peak to tantalum, the radioactive isotope 177Ta was recoil implanted into n-type 4H–SiC. DLTS spectra measured subsequently during the nuclear decay of 177Ta to 177Hf reveal a trap with decreasing concentration according to the elemental transmutation. This effect definitely proofs the identification of a Ta-related level at 0.68 eV below the conduction band edge. There is no further DLTS peak of time-dependent height, indicating that there is no deep level of Hf in the part of the band gap investigated. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1289484
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