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  • 11
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillian Magazines Ltd.
    Nature 427 (2004), S. 50-53 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] A consequence of relativity is that in the presence of an electric field, the spin and momentum states of an electron can be coupled; this is known as spin–orbit coupling. Such an interaction opens a pathway to the manipulation of electron spins within non-magnetic semiconductors, in the ...
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillian Magazines Ltd.
    Nature 414 (2001), S. 619-622 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The processing of quantum information based on the electron spin degree of freedom requires fast and coherent manipulation of local spins. One approach is to provide spatially selective tuning of the spin splitting—which depends on the g-factor—by using magnetic fields, but this ...
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [s.l.] : Macmillian Magazines Ltd.
    Nature 418 (2002), S. 751-754 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] There is a rich variety of quantum liquids—such as superconductors, liquid helium and atom Bose–Einstein condensates—that exhibit macroscopic coherence in the form of ordered arrays of vortices. Experimental observation of a macroscopically ordered electronic state in ...
    Type of Medium: Electronic Resource
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  • 14
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Semiconductor nanostructures based on two-dimensional electron gases (2DEGs) could form the basis of future devices for sensing, information processing and quantum computation. Although electron transport in 2DEG nanostructures has been well studied, and many remarkable phenomena have already ...
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2422-2424 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between surface acoustic waves and high mobility quasi-two-dimensional electron systems (2DES) in GaAs/AlGaAs heterojunctions with variable carrier density is investigated experimentally. In specially designed samples the strength of this acoustoelectric interaction can be controlled via the field-effect induced variation of the carrier density of the 2DES. Since the sensitivity of surface acoustic wave experiments is particularly high at very low conductivities, the proposed technique will be an especially valuable tool for the investigation of 2DES with extremely low sheet carrier densities. We demonstrate that the proper use of a metallic gate electrode does not conflict with the piezoelectric interaction between the mobile carriers confined in the heterostructure and the surface acoustic wave propagating on the piezoelectric substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 348-350 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have designed and fabricated a remotely doped "logarithmic'' potential well intended to have a tunable, narrow band absorption at far-infrared frequencies. A surface gate, epitaxially grown backgate, and contact to the electron gas in the quantum well allow independent control of the absorption frequency and the integrated absorption strength. The resonance frequency is dominated by the well curvature at the potential minimum and can be Stark shifted from ω/2πc=35 cm−1 to a frequency of 125 cm−1 by moving the electron gas through the asymmetric well.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2226-2228 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe the infrared absorption of holes in a wide graded AlxGa1−xAs parabolic quantum well to be at a single frequency, independent of the number of holes in the well. The resonant absorption frequency appears to be determined by the light hole mass, not the heavy hole mass.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3932-3934 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-efficiency and low-threshold InGaAs/AlGaAs quantum-well laser structures have been grown by molecular beam epitaxy. Material characterization was performed on polyimide-planarized ridge-waveguide lasers. The measured material gain data are compared to theoretical calculations that include the valence-band mixing effects. Total injection current densities of 84 and 60 A/cm2 have been measured from 50-μm-wide laser diodes with cavity lengths of 2850 μm (from a double-quantum-well sample) and 1770 μm (from a single-well sample), respectively. Moreover, we have also obtained a cw threshold current as low as 2.1 mA from a 1.7-μm-wide and 140-μm-long as-cleaved ridge-waveguide device. In addition, the lateral current leakage for the double-quantum-well sample is found to be twice that of the single-well one.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1003-1007 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier distributions in modulation-doped wide graded quantum wells that a measurement of the capacitance C between a surface gate and an ohmic contact to the carriers as a function of the applied bias V would yield are calculated. These capacitance-voltage (C-V) distributions are found to agree inexactly, but closely, with the calculated true carrier distributions. Density modulation features, induced by superlattices or by abrupt changes in the curvature of band-gap grading, are strikingly reproduced. Electron distributions extracted from actual measurements on a wide parabolic well and on a parabolic well with superimposed superlattice are in good agreement with theory. For the case of the parabolic well, the occupancy of a finite number of subbands is manifested as structure in the C-V distributions. This technique is relevant to the measurement of carrier distributions in any wide carrier system with more than one electric subband occupied.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7351-7357 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a computer-solvable model of step-flow growth that includes both anisotropic multiterrace adatom migration and asymmetric step edge attachment. We find that terrace widths equalize not only when each adatom preferentially attaches to the ascending step edge of the terrace that it lands on, but also when adatoms preferentially migrate over ascending step edges. This latter process can equalize long-range terrace width nonuniformities much more rapidly than can the former process. We also find that a slow lateral movement of terrace width distributions occurs when each adatom adheres to the step edges of the terrace that it lands on. More significantly, we find that a rapid lateral movement of terrace width distributions occurs when adatoms cross multiple step edges. This motion is especially fast when adatoms migrate distances that are comparable to or greater than the terrace width distribution period. We simulated the evolution of an experimentally observed (Al,Ga)Sb lateral superlattice (LSL) terrace width distribution, which led to quantitative estimates of the adatom migration characteristics present during the LSLs growth. At least one type of adatom, probably Ga, migrates nearly isotropically over many terraces. This method of determining adatom migration characteristics can be extended to any material system that allows LSL layers to be grown as terrace width markers.
    Type of Medium: Electronic Resource
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