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  • 11
    Electronic Resource
    Electronic Resource
    Simulation and analysis of silicon electro-optic modulators utilizing the carrier-dispersion effect and impact-ionization mechanism (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1521-1528 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of Si guided-wave electro-optic modulator is proposed and analyzed. The modulator makes use of the impact-ionization mechanism for carrier generation, and the carrier-dispersion effect for electro-optic conversion. Both electrical and wave propagation properties of the modulator were examined by a two-dimensional device simulator and a three-dimensional waveguide simulator, respectively. Numerical estimates of phase modulation due to refractive-index change and intensity modulation due to optical absorption and radiation loss were obtained. One of important features of the prospected modulator is speed. The simulated turn-on and turn-off time of the modulator was less than 1 ns. GHz modulation is, therefore, possible for this class of modulators with device structure and doping profiles optimized for fiber coupling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354851
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  • 12
    Electronic Resource
    Electronic Resource
    Change in refractive index for p-type GaAs at λ=1.06, 1.3, and 1.55 μm due to free carriers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 925-929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum-mechanical approach used to calculate the refractive-index change Δn due to free carriers for various doped p-type GaAs is presented. The approach makes use of a numerical Kramers–Kronig analysis to analyze a carrier-related optical-absorption spectrum in which various important carrier effects have been considered including the band-filling effect, the band-tailing effect, the band-gap-shrinkage effect, the direct optical transition of carriers between subvalence bands, and the indirect intravalence-band absorption due to phonons and impurities. Values of Δn have been obtained for various doping and carrier concentrations at wavelength λ=1.06, 1.3, and 1.55 μm. These Δn data are directly applicable to both the injection- and depletion-type optical-switching and modulation applications, and the optical-probing application. A comparison of various index-changing effects for GaAs at wavelength λ=1.06, 1.3, and 1.55 μm is also listed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349600
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  • 13
    Electronic Resource
    Electronic Resource
    A silicon diverging beam modulator fabricated by part of metal-oxide-silicon process modules (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 791-793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We hereby report a silicon diverging beam modulator fabricated by part of metal-oxide-silicon process modules. The particular feature of the fabrication is that a mode modulation technique is utilized. This technique changes intensity confinement of the propagation modes of a silicon partial waveguide such that an intensity modulation is achieved. Modulation indices of greater than 15% have been observed with a forward-bias current of 24 mA and a modulation length of 3 mm. By reducing the core width of the modulator, the modulation index can be further increased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351813
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  • 14
    Electronic Resource
    Electronic Resource
    Quantum calculations of the change of refractive index due to free carriers in silicon with nonparabolic band structure (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2033-2039 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum-mechanical approach used to calculate the change of refractive index, Δn, due to free carriers in various doped silicon is presented. This approach uses a numerical Kramers–Kronig relation to analyze a calculated carrier-related absorption spectrum below or near the energy-band gap. The absorption spectrum is obtained by considering the optical transitions between energy bands and impurity bands, and the free-carrier absorption due to acoustic phonons, optical phonons, and ionized impurities in a spherical nonparabolic band model. Values of Δn at wavelength λ=1.3 and 1.6 μm for different doping levels are obtained. The results are applicable to both the integrated-optics applications and optical-probing applications in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345586
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  • 15
    Electronic Resource
    Electronic Resource
    Characterization and minimization of flicker in silicon light valves (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 831-837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed systematic characterizations of flicker in silicon light valves. It was found that there were four conduction mechanisms accounting for the flicker. These four mechanisms were residual dc charge on the silicon surface, voltage holding capability of the liquid crystal cell, voltage holding capability of the silicon panel, and parasitic capacitor coupling of the pixel. Major causes of these four mechanisms were identified. Solutions of flicker minimization were obtained for each mechanism. Among these solutions, offset of common voltage was found very useful to compensate for residual dc charge and parasitic capacitor coupling. Frame rate multiplication was found very useful for the minimization of flicker due to low voltage holding capabilities of the liquid crystal cell and silicon panel. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331073
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  • 16
    Electronic Resource
    Electronic Resource
    Platinum silicide contact to arsenic-doped polycrystalline silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1111-1116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PtSi contacts to As-doped polycrystalline silicon have been studied with respect to dopant redistribution, microstructure, and contact resistance. Arsenic was found to pileup at the PtSi-polysilicon interface upon silicide formation. Cross-sectional transmission-electron microscopy revealed columnar PtSi grains and a relatively flat interface between PtSi and polysilicon. These observations are similar to those reported for the case of PtSi formed on the single-crystal silicon. The specific contact resistance (ρc) has been investigated as a function of As concentration ranging from 8×1019 to 2×1021 cm−3 and of its dependence on substrate preclean procedures prior to Pt deposition. It was found that ρc decreases with increasing As concentration, as expected from theory. However, the contact resistance to As-doped polysilicon is about ten times higher than contacts to similarly doped single-crystal Si. The origin of this difference is attributed to the fact that not all of the implanted As was activated. Hall-voltage measurements showed that only about 10% of the implanted As was electrically active after an 880 °C, 20 min furnace annealing. Rapid-thermal annealing was then used to activate a higher fraction of the implanted As. Consequently, a much lower ρc was obtained: e.g., 7.5×10−8 Ω cm2 for samples annealed at 1050 °C for 30 s, in contrast to a value of 8.4×10−7 Ω cm2 for a furnace-annealed sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340016
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  • 17
    Electronic Resource
    Electronic Resource
    The carrier effects on the change of refractive index for n-type GaAs at λ=1.06,1.3, and 1.55 μm (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1497-1503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical Kramers–Kronig analysis is used to calculate the refractive-index change Δn caused by the injection/depletion of free carriers in various doped n-type GaAs. The analysis makes use of a carrier-related absorption spectrum, which is established by using quantum theory as well as empirical relations and is confirmed by the experimental absorption data in the literature. We obtain the Δn values for various doping concentrations ND and carrier concentrations N at three wavelengths; λ=1.06, 1.3, and 1.55 μm. The Δn value is positive for low-N region, and increases gradually to its maximum which is around 10−4 for λ=1.06 μm. Thereafter, Δn decreases rapidly to 0 as N increases. The linear relation between Δn and N, as predicted by the Drude theory, only happens when N is beyond a certain value. In this region, the Δn value may attain to −10−2 at N=5×1018 cm−3 for λ=1.55 μm. Because of this significant Δn value and its linear relation with N, the free-carrier induced index-change effect may find the applications in integrated optics and optical probing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345658
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  • 18
    Electronic Resource
    Electronic Resource
    Reflective twisted nematic liquid crystal displays. I. Retardation compensation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5924-5929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflective twisted nematic displays where the output polarizer is eliminated are analyzed and demonstrated. The absence of the rear output polarizer has many advantages, including much higher brightness and higher resolution. In this article, we examine the solution space for the design of such reflective displays. Both the cases of a simple reflective display and the use of a retardation film within the display to compensate for color dispersion are explored. It is shown that excellent black and white displays can be obtained using film compensation. Experimentally, over 90% reflectance from a compensated reflective display has been obtained with low color dispersion. The optical response of this reflective display was also found to be quite fast and suitable for video rate applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364379
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  • 19
    Electronic Resource
    Electronic Resource
    On the initial growth of indium tin oxide on glass (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2663-2665 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth mode of indium tin oxide on glass was studied. An interesting transition from a 3D island growth mode at low temperatures to 2D growth at higher temperature was observed. This transition from the Volmer-Weber mechanism to the Frank–van der Merwe mechanism occurs at about 150°C. It coincides with the transition from amorphous to polycrystalline growth of the thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116274
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  • 20
    Electronic Resource
    Electronic Resource
    Fractionation of chromatin fragments on columns of Biogel A50-m at different salt concentrations
    Amsterdam : Elsevier
    FEBS Letters 183 (1985), S. 270-274 
    Details
    ISSN: 0014-5793
    Keywords: Chromatin ; Chromatin fractionation ; Gel permeation
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0014-5793(85)80791-2
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