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  • 11
    Electronic Resource
    Electronic Resource
    Measurements of negative ion densities in 13.56-MHz rf plasmas of CF4, C2F6, CHF3, and C3F8 using microwave resonance and the photodetachment effect (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3472-3480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-power density of a frequency quadrupled pulsed Nd-YAG laser has been used to photodetach electrons from negative ions in rf plasmas generated within a microwave cavity. Negative ion densities have been determined by measuring the frequency shift of the resonance transmission, the shift being caused by the photoelectrons created by irradiating the plasma with the laser pulse. By measurement of the shape of the resonance curve as a function of time and of microwave frequency, and consecutive fitting of a parabola to the top of the resonance curve, the negative ion density has been determined as a function of gas pressure, rf power, and position in the plasma. Measurements were performed in plasmas of CF4, C2F6, CHF3, and C3F8. The results indicate that the negative ion densities are about one order of magnitude larger than the electron density, which is in good agreement with a fluid model calculation. The pressure and power dependence of the electron density and of the negative ion density gives insight in the relation between the electron temperature and the macroscopic plasma parameters. Measurements as a function of the laser wavelength, using a pulsed dye laser, show that in CF4 the negative ions mainly consist of F−, whereas in C2F6 significant densities of other negative ions may occur.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350346
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  • 12
    Electronic Resource
    Electronic Resource
    Temporal behavior of the electron and negative ion densities in a pulsed radio-frequency CF4 plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2939-2946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron and negative ion densities in the afterglow and in the plasma initiation phase of a 13.56-MHz rf discharge in CF4 were measured by using a microwave cavity method and a laser photodetachment technique. Measurements were carried out at low rf powers ((approximately-less-than)10 W) and in the pressure range from 100 to 300 mTorr. The electron density in the afterglow showed an enhanced decay rate due to the presence of negative ions. Electrons originating from negative ions through associative collisional detachment with neutral radicals were also detected in the afterglow. Decay curve analysis of the negative ion density gave an ion–ion (presumably CF+3−F−) recombination rate constant of (5±2)×10−13 m3 s−1, and showed that, in the active plasma, the negative ion loss rates by associative detachment and ion–ion recombination are of the same order of magnitude. The behavior of the electron and negative ion densities in the plasma initiation phase indicates that molecules and radicals that slowly accumulate in the plasma do not play a significant role in the production of negative ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349318
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  • 13
    Electronic Resource
    Electronic Resource
    Thomson scattering in a low-pressure argon mercury positive column (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3899-3904 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron density and the electron temperature in a low-pressure argon mercury positive column are determined using Thomson scattering. Special attention has been given to the stray light reduction in the Thomson scattering setup. The results are obtained in a discharge tube with a 26 mm diam, 5 mbar of argon, a mercury pressure in between 0.14 and 1.7 Pa, and an electric current ranging from 200 to 400 mA. The systematic error in the electron density is 15%, the statistical error is 25%. The total error in the electron temperature is 10%–20%. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290733
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  • 14
    Electronic Resource
    Electronic Resource
    Emission spectrum of a depleted neon–mercury positive column (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1733-1741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under certain discharge conditions, radial cataphoresis causes significant mercury depletion in a low-pressure neon–mercury positive column. This depletion can result in the addition of neon radiation to the emission spectrum of the column. The addition of neon radiation can be used to change the color of fluorescent lamps. In order to investigate the radial cataphoresis process, we performed spatially resolved emission measurements. For the relevant spectral lines of mercury and neon, the emission coefficient is determined, along with the density of the upper state of the corresponding transition. Absorption measurements are performed to check the amount of self-absorption of the spectral lines. We present emission and density profiles for various discharge conditions. The obtained results can be understood using an approximate description of the radial cataphoresis process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305843
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  • 15
    Electronic Resource
    Electronic Resource
    Modeling of the microdischarges in plasma addressed liquid crystal displays (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2252-2262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma addressed liquid crystal (PALC) is a promising technology for large size flat display devices, which uses gas discharges as electrical switches for the addressing of a liquid crystal (LC) layer. This work presents a comprehensive two-dimensional fluid model, that we developed for the simulation of the microdischarges occurring in PALC displays. The model comprises continuity equations and drift-diffusion equations for plasma particle species, a balance equation for the electron energy, and Poisson's equation for the electric field. Using this model, we succeeded in simulating the full PALC operation, reproducing a series of discharge pulses and afterglows in three consecutive PALC discharge channels. Results are presented for helium and helium–hydrogen mixtures. The results include: calculated particle densities, current–voltage curves, plasma decay times, surface charges, and LC transmission profiles. The influence of electrical crosstalk between adjacent channels is demonstrated.© 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287529
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  • 16
    Electronic Resource
    Electronic Resource
    Energy distribution of ions and fast neutrals in microdischarges for display technology (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2240-2245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we present simple theoretical predictions as well as full Monte Carlo calculations of the energy distribution of the ion and fast neutral fluxes impinging on the materials that surround the microdischarges in plasma display panels and plasma addressed liquid crystal displays. We consider various rare gas ion species in different microdischarge designs. Often simple theoretical distribution functions are in good agreement with the results of Monte Carlo calculations. Under the influence of symmetric charge transfer collisions the ion energy distribution is essentially different from a Maxwellian distribution, and the ion motion is strongly orientated along the electric field. The flux of the fast neutrals formed by symmetric charge transfer is usually even larger than the ion flux itself. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287758
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  • 17
    Electronic Resource
    Electronic Resource
    Nonintrusive wafer temperature measurement using in situ ellipsometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3390-3392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO2. The values of these parameters have been redetermined in this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348517
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  • 18
    Electronic Resource
    Electronic Resource
    Mercury depletion as a way of changing the emission spectrum of a fluorescent lamp (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1528-1530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a promising option for changing the emission spectrum of a fluorescent lamp. In a neon/mercury discharge, neon radiation is produced when the mercury density is sufficiently low. Under certain discharge conditions, radial cathaphoresis causes depletion of mercury atoms in the center of the plasma. This effect is especially well pronounced at high electrical currents and low mercury pressures. We measured the color temperature of a fluorescent lamp containing a neon/mercury discharge at several mercury pressures and currents. The color temperature of this lamp varied from 4000 to 2100 K. We also performed ultraviolet absorption measurements. From these measurements, we obtained the mercury atom density profile in the discharge. A significant decrease of the mercury density in the center of the plasma is indeed observed under certain discharge conditions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126085
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  • 19
    Electronic Resource
    Electronic Resource
    Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1351-1353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index at a wavelength of 632.8 nm of strained epitaxial SiGe layers on silicon substrates has been determined as a function of the germanium content using in situ ellipsometry during reactive ion etching. The germanium concentration was obtained from Rutherford backscattering. These index values are used to invert the ellipsometry equations. Using this principle, the Ge concentration depth profile of an unknown SiGe structure can be determined from an in situ ellipsometry measurement sequence that is taken while the unknown sample is being etched
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107314
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  • 20
    Electronic Resource
    Electronic Resource
    Interactive effects in the reactive ion etching of SiGe alloys (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2252-2254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching (RIE) of epitaxial, strained Si1−xGex alloys, x≤0.20, in fluorine-, chlorine-, and bromine-based low-pressure plasmas has been investigated. The SiGe etch rates increase for each etchant with Ge concentration, e.g., for fluorine-based RIE (CF4 and SF6) the etch rate of a Si80Ge20 alloy is (approximately-equal-to)2x that of elemental Si. Analysis shows that the etch rate increase is not accounted for by the greater rate of gasification of Ge atoms alone but that the presence of Ge atoms in the SiGe alloy increases the rate of Si etch product formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104942
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