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  • 11
    Electronic Resource
    Electronic Resource
    Near- and far-field observations of transient behavior in pulsed graded barrier quantum well lasers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2613-2615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pulsed behavior of both gain-guided and index-guided graded barrier quantum well lasers has been studied with near- and far-field lateral mode measurements at different pulse widths. Above threshold, gain-guided devices show a transition to predominantly index-guided operation as a result of thermally induced waveguiding. Similar devices with built-in real index guiding exhibit low threshold, stable mode operation, with no observable variations with pulse width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337130
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  • 12
    Electronic Resource
    Electronic Resource
    Complementary self-aligned laser arrays by metalorganic chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2633-2635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step metalorganic chemical vapor deposition growth technique has been used to fabricate multielement arrays of complementary self-aligned lasers using graded barrier quantum well active regions. This technique eliminates any possible difficulty associated with regrowth on a high composition AlGaAs layer by placing the interface outside the stripe region. The complex index guiding and resulting mode discrimination characteristics of self-aligned lasers stabilize the near- and far-field patterns of the array. Comparison studies between shallow mesa arrays and self-aligned arrays are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337138
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  • 13
    Electronic Resource
    Electronic Resource
    Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2307-2309 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 4×4 antiguided phase-locked vertical-cavity surface-emitting laser (VCSEL) arrays have been fabricated by a selective etching process and metalorganic chemical vapor deposition regrowth. Stable, diffraction-limited output is observed corresponding to either in-phase or out-of-phase mode operation, depending on the interelement spacing width. Calculations indicate resonant leaky-wave coupling occurs for interelement spacings corresponding to an integral number of half-waves of the radiation leakage from each VCSEL region, and the use of interelement loss is effective in suppressing nonresonant modes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317545
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  • 14
    Electronic Resource
    Electronic Resource
    Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1659-1661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step metalorganic chemical vapor deposition growth process is used to fabricate antiguided vertical-cavity surface-emitting lasers (VCSELs) incorporating a simplified-antiresonant reflecting optical waveguide (S-ARROW) design. Preliminary results show single-mode cw operation up to 1 mW output power from a 12 μm-diam (λ=930 nm) S-ARROW VCSEL with a large lateral index step (Δn=0.1). Modal discrimination in the S-ARROW-VCSEL is calculated using a fiber-mode approximation and device optimization for high-single-mode powers is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126127
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  • 15
    Electronic Resource
    Electronic Resource
    1.6 W continuous-wave coherent power from large-index-step (Δn(approximate)0.1) near-resonant, antiguided diode laser arrays (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1219-1221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-diffraction-limited-beam continuous-wave (cw) operation has been achieved to high powers from antiguided arrays with a large effective-index step between element and interelement regions. InGaAs/InGa(As)P/GaAs 40-element arrays (λ=0.985 μm) emit in beams 2×diffraction-limit (0.67°) at 1.6 W and 9×threshold in cw operation. 1 W of the coherent cw power resides in the central lobe. The external differential quantum efficiency and the threshold current are 40% and 0.4 A, respectively, for 1-mm-long devices of 191 μm emitting aperture. The overall electrical to optical power conversion efficiency at 1.6 W output power is 23%. Modeling of the thermal effects in cw operation on the array modes reveals that for high-index-step (∼0.1) near-resonant antiguided arrays thermal lensing hardly affects high-order modes, and as a consequence, 2×diffraction-limited beams can be maintained to watt-range cw powers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125990
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  • 16
    Electronic Resource
    Electronic Resource
    High-power (〉10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1182-1184 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By incorporating a broad transverse waveguide (1.3 μm) in 0.97-μm-emitting InGaAs(P)/InGaP/GaAs separate-confinement-heterostructure quantum-well diode-laser structures we obtain record-high continuous-wave (cw) output powers for any type of InGaAs-active diode lasers: 10.6–11.0 W from 100-μm-wide-aperture devices at 10 °C heatsink temperature, mounted on either diamond or Cu heatsinks. Built-in discrimination against the second-order transverse mode allows pure fundamental-transverse-mode operation (θ⊥=36°) to at least 20-W-peak pulsed power, at 68×threshold. The internal optical power density at catastrophic optical mirror damage (COMD) P¯COMD is found to be 18–18.5 MW/cm2 for these conventionally facet-passivated diodes. The lasers are 2-mm-long with 5%/95% reflectivity for front/back facet coating. A low internal loss coefficient (αi=1 cm−1) allows for high external differential quantum efficiency ηd (85%). The characteristic temperatures for the threshold current T0 and the differential quantum efficiency T1 are 210 and 1800 K, respectively. Low differential series resistance Rs: 26 mΩ; leads to electrical-to-optical power conversion efficiency values in excess of 40% from 1 W up to 10.6 W cw output power, and as much as 50% higher than those of 0.97-μm-emitting Al-containing devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122122
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  • 17
    Electronic Resource
    Electronic Resource
    0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 587-589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A second-order diffraction grating placed below the active region of a phase-locked resonant antiguided array selects the in-phase array mode in addition to its role as a single-longitudinal-mode selector. This type of array-mode discrimination relies on the fact that the resonant in-phase array mode has significantly better field overlap with the grating region than nonresonant array modes. Furthermore, it eliminates the need for a conventional array-mode discriminator: interelement loss; which can cause self-pulsations. Diffraction-limited beam and single-frequency operation is obtained to at least 0.45 W peak pulsed power from 20 element, InGaAs/InGaP/GaAs structures (λ=0.97 μm) of 120-μm-wide aperture. Distributed-feedback operation is confirmed over the 20–40 °C temperature range. The results are in good agreement with theory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121864
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  • 18
    Electronic Resource
    Electronic Resource
    6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al-free active-region diode lasers grown by low-pressure, metal-organic chemical vapor deposition and emitting at λ=805 nm have been optimized for high continuous wave output power. The 1-mm-long devices consisting of an InGaAsP/In0.5Ga0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure have a threshold-current density, Jth, of 310 A/cm2 and relatively high values for the characteristic temperatures of the threshold current, T0 (135 K), and differential quantum efficiency, T1 (900 K). Lasers with 10%/90% coatings and a 100-μm-wide stripe provide a maximum cw output power of 6.1 W at a heatsink temperature of 10 °C. The devices fail due to catastrophic optical mirror damage (COMD), where the internal power density, P¯COMD, is 17.4 MW/cm2; that is, twice that for conventionally facet-coated, 810 nm emitting, AlGaAs active-region diode lasers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120628
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  • 19
    Electronic Resource
    Electronic Resource
    14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1142-1144 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wide-stripe, 0.97 μm emitting Al-free InGaAs(P)/InGaP/GaAs broad-waveguide separate confinement heterostructure quantum-well lasers demonstrate a record value for quasicontinuous wave (QCW) output power: 14.3 W (100-μm-wide stripe, 100 μs-wide pulses); and reach catastrophic optical mirror damage (COMD) in QCW operation at an optical power density of 22.5 MW/cm2; that is, 40% higher than COMD levels in cw operation. The devices have low internal losses (αi=1 cm−1) and high external differential quantum efficiency (86% for 2-mm-long lasers), and exhibit only 10–20 °C temperature rises in the active region at 10 W QCW power. We also show that long-cavity, large-contact-area devices exhibit relatively little spectral broadening with increased output power. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119847
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  • 20
    Electronic Resource
    Electronic Resource
    5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 172-174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High power, 0.81-μm-emitting, semiconductor diode lasers are used as pump sources for Nd:YAG solid-state lasers. Devices (1-mm-long) consisting of a InGaAsP/In0.5(Ga0.9Al0.1)0.5P/In0.5(Ga0.5Al0.5)0.5P laser structure provide a threshold-current density, Jth, of 290 A/cm2 and a relatively high threshold-current characteristic temperature, T0 (140 K). Uncoated diode lasers (1.2-mm-long) have a maximum continuous wave output power of 5 W (both facets) at 20 °C. The internal power density at catastrophic optical mirror damage (COMD), P¯COMD, is determined to be 9.1 MW/cm2; that is, 1.8 times that for GaAs-active layer, Al-free, uncoated devices. Coated, InGaAsP-active devices are expected to have P¯COMD=18 MW/cm2, more than twice the P¯COMD of AlGaAs-active, 0.81-μm-emitting devices with the same emitting aperture. Therefore, 0.81-μm-emitting, InGaAsP-active diode lasers should operate reliably at powers at least twice those of AlGaAs-based devices with the same contact-stripe geometry. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119528
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