Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 11
    Electronic Resource
    Electronic Resource
    Nitrogen pair luminescence in GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1451-1453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first observation of different nitrogen pair complexes in GaAs. These complexes, which have been searched for since the '60s, are studied under the application of hydrostatic pressure. By carefully tuning the pressure, we make one after the other of the NNi pairs (1≤i≤10) appear in the band gap of GaAs and then become the major exciton recombination channel. We compare our results for nitrogen states in GaAs with the classical case of NNi excitons in GaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102495
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Single-monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1128-1130 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≈2.93 A(ring)) have been grown by low-pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer quantum well. Well-resolved photoluminescence peaks were observed and were attributed to recombination of excitons bound to quantum wells of defined monolayer thickness. The growth rate could be adjusted to produce a one monolayer quantum well. Its photoluminescence peak was observed at 1.245 eV, corresponding to a quantum confinement shift of 434 meV. The full width at half maximum of this peak was only 8 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102589
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2112-2122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on edge state transport in a ternary material, a modulation-doped InP/Ga0.25In0.75As/InP quantum well, where the electron transport takes place in the highly strained Ga0.25In0.75As layer. The electron mobility is, even though fundamentally limited by alloy-disorder scattering, determined by the two-dimensional electron concentration. By varying the distance between the modulation-doped layer and the two-dimensional electron gas we influence the single particle relaxation time but not the electron mobility. Special attention is paid to the effect of dislocation formation in the conducting Ga0.25In0.75As layer. In addition to the quantum Hall and the Shubnikov–de Haas effect a strong, nonlocal transport behavior, which is maintained after illumination, is observed. This effect is explained by the low defect density and the Fermi level pinning on the etched Ga0.25In0.75As surface, at an energy close to the same as the Fermi energy of the two-dimensional electron gas. Furthermore, overshoot effects of the quantum Hall plateaus introduced by the high and varying effective (many-body) g value are investigated. The g value is further addressed in an experiment on a wet etched quantum wire in which values enhanced up to around 45 were found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368272
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Electron beam prepatterning for site control of self-assembled quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1367-1369 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A site-control technique for individual InAs quantum dots (QDs), formed by self-assembling has been developed, using scanning-electron-microscope assisted nanodeposition and metalorganic vapor phase epitaxy. We find that the nanoscale deposits, created at the focal point of the electron beam on a semiconductor surface, act as "nanogrowth masks". Growth of a thin epitaxial layer produces nanoholes extending down to the deposits. The carbon deposits can be removed by oxygen plasma etching. When a compressively strained layer is deposited on this surface, QDs are self-organized at the hole sites, while no dots are observed in the flat surface region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351528
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Conductance oscillations induced by longitudinal resonant states in heteroepitaxially defined Ga0.25In0.75As/InP electron waveguides (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2274-2276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured at low temperatures the conductance of electron waveguides fabricated from modulation-doped quantum wells by wet etching and regrowth. We have found that, for a waveguide with abruptly changed geometry at the entrance and exit, the conductance shows oscillations, which are superimposed on a conventional conductance plateau structure. The periods and amplitudes of conductance oscillations depend on the length to width aspect ratio of the waveguide. In addition, the amplitudes of conductance oscillations decrease with increasing temperature. We propose that the observed oscillations are caused by the formation of longitudinal resonant electron states in the waveguide, in analogy with optical Fabry–Perot effects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126319
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Effects of charged self-assembled quantum dots on two-dimensional quantum transport (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1704-1706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of a layer of InAs quantum dots on the transport properties of a nearby two-dimensional electron gas (2DEG) in an InGaAs/InP quantum well is investigated. The probability of the scattering between edge states is found to increase as the distance between the layer of the dots and the 2DEG decreases. It is shown that Coulomb scattering by electrons in the charged quantum dots play an important role in the scattering between edge states. An effect of the electrons in the dots is to mediate scattering between spin-split edge states. This is demonstrated by showing that the overshoot effect in the quantum Hall regime is only present when the dots are charged with electrons. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126142
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1384-1386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on nonlinear electrical properties of three-terminal ballistic junctions (TBJs) based on high-electron-mobility GaInAs/InP quantum-well structures. Nonlinear electrical transport behavior of the TBJs is found, and we show a correlation between this behavior and the linear regime of electron transmission in the devices. We also study device geometry effects on these electrical properties of the TBJs. Finally, we demonstrate room-temperature operation of the devices. The results obtained are compared with recent predictions by Xu [H. Q. Xu, Appl. Phys. Lett. 78, 2064 (2001)] and good agreement is found. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396626
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1841-1843 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied GaP/GaAs/GaP and GaAsxP1−x/GaAs/GaAsxP1−x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1−x/GaAs/GaAsxP1−x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios 〉5. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459113
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    High peak-to-valley ratios observed in InAs/InP resonant tunneling quantum dot stacks (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3232-3234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant tunneling was observed through single InAs quantum dot (QD) stacks embedded in InP barriers with peak-to-valley ratios as high as 85 at 7 K. Negative differential resistance in the current–voltage [I(V)] characteristics was obtained up to a point above the temperature of liquid nitrogen. These features were observed in measurements on low-density QD stacks, in which a macroscopic ohmic contact covered less than 150 QD stacks. Due to the design of the structure, the upper QD in the stack has the function of a zero-dimensional emitter. Electrons easily fill the upper dot, whereas tunneling through the entire structure is only allowed when two states in the dots align energetically, resulting in sharp resonant tunneling peaks with high peak-to-valley ratios. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374235
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Comment on "Nanoscale InP islands embedded in InGaP'' [Appl. Phys. Lett. 66, 361 (1995)] (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1166-1167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114996
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...