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  • 31
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1580-1582 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short light pulse generation from an optically pumped GaAs/AlGaAs quantum well laser is measured. The shortest pulse width achieved so far is less than 1.3 ps. In addition, it is found that the pulse from varies randomly even when the same excitation condition, which results from stochastic behavior of the spontaneous emission coupling to the lasing mode. In order to discuss these results in more detail, spatial dependent rate equations are analyzed in which the stochastic process of the spontaneous emission and the traveling effect of spontaneously generated optical wave packets are included.
    Type of Medium: Electronic Resource
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  • 32
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1295-1297 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A picosecond pulse (〈1.8 ps) at 8570 A(ring) is successfully generated by a gain switching method in an optically pumped GaAs/AlGaAs multiquantum well laser with a cavity length of 155 μm. This is the narrowest pulse width so far achieved in semiconductor lasers without the external cavity. We believe that this short pulse generation results from the enhanced differential gain due to the two-dimensional properties of the carriers in the quantum wells.
    Type of Medium: Electronic Resource
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  • 33
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3379-3385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser ablation of NiO at 266 nm has been studied by measuring absorption spectra and emission spectra which are resolved both temporally and spatially. The spectra were measured at several points 1 mm apart from the laser spot and with several detection angles. Ablated species in different electronic states such as the ground state, lower lying states, and excited states are distinguished from absorption and emission spectroscopy. Time-of-flight spectra of these species and their angular dependence are obtained. It is revealed that excited Ni neutrals are generated mainly by the recombination of Ni+ ions with electrons, and Ni+ ions ejected nearly normal to the surface are exclusively excited due to multiple collisional effect. The isotropic angular dependence of most probable velocities of Ni+ ions and Ni neutrals are explained by ambipolar diffusion of the plume. The mechanism of species ejection is also discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 34
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present magnetotransport properties, with emphasis on Hall effect, of a new class of III–V based magnetic (GaMnAs)/nonmagnetic (AlAs) semiconductor superlattices (SLs) grown by low-temperature molecular beam epitaxy. The SLs having relatively wide (GaMn)As layers (≥70 Å) are ferromagnetic at low temperatures, and their hole concentrations and Curie temperatures are estimated through the analysis of Hall measurements. The dependence of the magnetic and transport properties on the GaMnAs well width is discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 35
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 764-771 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co–Ag granular films having various Co grain sizes are prepared by rf sputtering under various sputtering conditions. The Co grain sizes are derived from the magnetization curves by dividing them into ferromagnetic and superparamagnetic components. As the Co content decreases, the radii of the superparamagnetic Co grains, rg, decrease and the distances between the Co grains, tg, increase. The magnetoresistance is proportional to the volume density of superparamagnetic grains or related to krg3 exp(−tg/l) with k=3.8×102 μΩ/cm2 and l=20 Å, implying that the giant magnetoresistance is caused by the spin-dependent scattering in the inner part of the superparamagnetic Co grains as well as at the grain surfaces. Furthermore, it is found that the extraordinary Hall effect arises mainly from the side jump mechanism, and that significant perpendicular magnetic anisotropy appears in the Co composition range between 40 and 70 at %. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 36
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1214-1216 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport properties of electrons in a novel in-plane superlattice structure are studied and the field-effect transistor action has been demonstrated. The structure consists of an n-AlGaAs/GaAs modulation-doped heterojunction in which an array of monolayer-thick AlAs grid is embedded with an average period of 162 A(ring) in the channel region of the heterojunction. This grid has been prepared with molecular beam epitaxy by depositing a half monolayer of AlAs on a GaAs (001) vicinal plane, where periodically spaced atomic terraces are formed. The electron mobilities μ(parallel),μ⊥ parallel and normal to the grid are measured as functions of electron concentration NS. While the mobility ratio (μ(parallel)/μ⊥) is nearly unity at low NS, the ratio is found to get as large as 2.2 as NS increases. This anisotropic behavior of μ is well accounted for by the calculated nonparabolicity in the miniband structure of in-plane superlattices.
    Type of Medium: Electronic Resource
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  • 37
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1934-1936 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study experimentally and theoretically the influence of interface roughness on the mobility of two-dimensional electrons in modulation-doped AlAs/GaAs quantum wells. It is shown that interface roughness scattering is the dominant scattering mechanism in thin quantum wells with a well thickness Lw〈60 A(ring), where electron mobilities are proportional to L6w, reaching 2×103 cm2/V s at Lw∼55 A(ring). From detailed comparison between theory and experiment, it is determined that the "GaAs-on-AlAs'' interface grown by molecular beam epitaxy has a roughness with the height of 3–5 A(ring) and a lateral size of 50–70 A(ring).
    Type of Medium: Electronic Resource
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  • 38
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1651-1653 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the correlation length (Λ) of interface roughness in GaAs/AlAs quantum wells (QWs) prepared by molecular beam epitaxy (MBE). It is found that the mobility of two-dimensional electrons in very thin selectively doped GaAs/AlAs QW structures is substantially enhanced when the bottom AlAs barrier layer is prepared by alternate beam MBE and/or by the use of superlattice buffer layer below the QW. By measuring the electron concentration dependence of mobility and comparing with the theory of interface roughness scattering, we have found that Λ of the bottom (GaAs-on-AlAs) interface of the QW gets as large as 200–300 A(ring), when prepared by the modified growth technique, which is about three times as large as that (∼70 A(ring)) by conventional MBE.
    Type of Medium: Electronic Resource
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  • 39
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7395-7397 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of magneto-optical property in the visible wavelength region has been studied on four-element semimagnetic semiconductor CdMnCoTe films deposited on quartz glass substrates by using MBE equipment. A large dispersion of Faraday rotation was observed, and the peak of the Faraday rotation was shifted to the higher photon energies with increasing Mn concentration at low temperatures. At 180 K, the value of the Faraday rotation observed for the Cd0.647Mn0.34Co0.013Te film on quartz glass was −0.36 deg/cmG at 630 nm. It is equivalent to the value of −0.36 deg/cmG observed at 77 K for the Cd0.52Mn0.48Te film on quartz glass. At 77 K, the Faraday rotation observed for the Cd0.647Mn0.34Co0.013Te film on quartz glass was −0.49 deg/cmG at 610 nm. The value is approximately two times larger than that of the Cd0.52Mn0.48Te film deposited on the same quartz glass substrate. The origin of the enhancement of Faraday rotation in CdMnCoTe films has been discussed in terms of the magnetic susceptibility χ. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 40
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5914-5914 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, high-Tc oxide superconductors have been extensively studied because these materials can be applied to various electronic devices, especially highly sensitive magnetic sensors or high-speed switching elements. For such the applications, thin films with superior superconductivity and very smooth surfaces are needed. The purpose of this work is to develop an as-grown technique of Y-Ba-Sr-Cu-O films on comparatively low-temperature substrates by adopting a newly devised alternative sputtering. The sputtering apparatus was constructed by three targets and a substrate holder which was intermittently rotated and stopped facing the desired target. The targets were Y2O, BaO+SrO, and Cu or CuO. The thickness of the oxide layer alternately deposited was adjusted to the thickness of the each metal-oxide monolayer. The substrate used was a (100) plane of a single-crystal MgO. The substrate temperature Ts was changed from 450 to 600 °C. The deposition rate of the each layer was affected by Ts. Especially, the deposition of the CuO layer was very sensitive to conditions of the film growing surface: Ts and/or degree of oxidation. The film composition was adjusted by changing the deposition time of the each layer. The crystal with an oxygen-defective perovskite nucleated even at a Ts of about 500 °C. In the case of sintered bulks, a tetragonal phase was obtained when the content of Sr was comparatively large. In contrast, an orthorhombic phase was stabilized in the sputtered films. As-grown films showed a poor superconductivity. After a post-annealing in 1-atom O2 at a low temperature of about 450 °C, a sharp superconducting transition was observed above 77 K. As we increase the content of Sr, the resistivity of the film became large and semiconductive.
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