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  • 1
    Electronic Resource
    Electronic Resource
    Plasma enhanced chemical vapor deposited SiO2 layers for passivation of InGaAs:Fe metal-semiconductor-metal photodetectors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 945-947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on the passivation and antireflection coating of InGaAs:Fe metal-semiconductor-metal photodetectors using remote plasma-enhanced chemical vapor deposited SiO2 layers are reported. The deposition of SiO2 on the detector surface leads to a reduction of the dark current by nearly two orders of magnitude at 5 V bias. Temperature-dependent measurements of the leakage current characteristics indicate that the Schottky barrier height is substantially lowered near the metallization edges of the reversed biased contact fingers. The effective barrier height in the edge region, which controls the magnitude of the leakage current is determined by activation energy plots to be 0.14 eV for nonpassivated and 0.20 eV for passivated structures, respectively. Apart from the improvement of the dark current characteristics, the SiO2 coating results in a drastic reduction of the photocurrent gain. The long-term stability of the passivation is proved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359025
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  • 2
    Electronic Resource
    Electronic Resource
    Study of radiative recombination efficiency in 28–180-Å-wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4152-4155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The paper reports a theoretical and experimental study of the dependence of the radiative recombination efficiency (ηi) on the GaAs quantum well width (Lz) in AlGaAs/GaAs quantum well structures with binary/binary superlattice confinement. Values of ηi(approximately-greater-than)60% at room temperature have been obtained for quantum wells with Lz≥40 A(ring). It is shown that structures with Lz〈40 A(ring) exhibit a sharp decrease in ηi associated with nonradiative recombination of the high energy part of nonequilibrium carriers in the confining layers even in the presence of comparatively high potential barriers for Γ electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357002
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  • 3
    Electronic Resource
    Electronic Resource
    Fe and Ti doping of InP grown by metalorganic chemical-vapor deposition for the fabrication of thermally stable high-resistivity layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3870-3881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optimum conditions for the fabrication of semi-insulating InP epitaxial layers grown by metalorganic chemical-vapor deposition are investigated in a comparative study of the structural, electrical, and diffusive properties of Fe- and Ti-doped material. Thermally stable InP:Fe layers with resistivities approaching the intrinsic limit can be prepared in an environment of n-type material if the Fe concentration does not exceed but is close to its solubility limit of 8×1016 cm−3 at 640 °C. In contact with p-type layers, however, semi-insulating characteristics of InP:Fe turn out to be difficult to reproduce because of a pronounced interdiffusion of Fe and p-type dopants. Here, Ti doping of InP is shown to be a useful scheme for the fabrication of high-resistivity layers. New processes for the deposition of InP:Ti using (C5H5)2Ti(CO)2 and Ti[N(CH3)2]4 as metalorganic precursors are described in detail. Ti is found to compensate up to 2×1016 cm−3 of shallow acceptors in metalorganic chemical-vapor-phase-deposition-grown InP. Ti-doped InP layers containing more electrically active deep Ti donors than net shallow acceptors exhibit semi-insulating characteristics with a resistivity of 5×106 Ω cm. Codoping of InP:Fe with Ti turns out to be a universal process for the preparation of thermally stable high-resistivity layers. If the material is appropriately grown, Fe+Ti doping compensates both excess shallow donors and excess shallow acceptors up to concentrations of 8×1016 and 2×1016 cm−3, respectively. In contrast to InP:Fe, resistivities in excess of 107 Ω cm are obtained in contact with both symmetric n- and p-type current injecting contacts. Moreover, codoping of semi-insulating InP:Fe with Ti is found to suppress the interdiffusion of Fe and p-type dopants. Therefore, the outdiffusion and accumulation of Fe in other regions of complex device structures can be significantly reduced. The interdiffusion of Fe and p-type dopants as well as its suppression by additional doping with Ti, finally, is studied in detail, which enables a comprehensive model accounting for this phenomenon to be developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356067
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  • 4
    Electronic Resource
    Electronic Resource
    Detailed atomic scale structure of AlInAs/GaInAs quantum wells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2688-2692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantification of high-resolution transmission electron microscopy (HRTEM) lattice images and detailed luminescence line-shape analysis is used to determine the atomic structure of GaInAs quantum wells (QWs) between AlInAs barriers. By careful analysis of a statistically large number of HRTEM images, we are able to measure the standard deviation in the mean quantum-well width to better than one (200) monolayer. Statistical analysis of the temperature dependence of the luminescence yields QW width distribution functions and variations of the mean QW width across the sample with a precision of better than 0.2 nm in quantitative agreement with the transmission electron microscopy results. No large and smooth islands with monolayer steps in between but rather long-range mean band-gap fluctuations are observed. Spectral broadening is found to be induced by well-width-dependent roughness of inequivalent growth surfaces and by clustering in the barriers for extremely narrow wells of the order Lz≈1 nm. Our results indicate a pronounced surface roughening of InGaAs at 640 °C. The mean height of steps of a maximum width of 5 nm at the InGaAs surface increases from 1 to 2 monolayers for an increase of well width from ≈1 to 2.5 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342753
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  • 5
    Electronic Resource
    Electronic Resource
    Optical and electrical characterization of high-resistivity liquid-phase-epitaxial In0.53Ga0.47AsB: Fe (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4574-4579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semi-insulating In0.53Ga0.47As with carrier concentration n=1.2×1012 cm−3, resistivity up to 1090 Ω cm, and mobility up to 9500 cm2/V s at 300 K is grown by liquid-phase epitaxy and doping with Fe. The influence of Fe doping on the photoluminescence of In0.53Ga0.47As is systematically investigated. An acceptor level at Ev+150 meV, tentatively assigned to Fe by some of us earlier, is definitively identified as an Fe-related complex. This acceptor level, however, is not responsible for the semi-insulating behavior of In0.53Ga0.47As as shown by statistical calculations. High-resolution deep-level transient spectroscopy experiments show two deep acceptors at EC−ET=0.44 and 0.30 eV, respectively. The first one, which dominates, is identified as being caused by the Fe3+/Fe2+ acceptor level. The second, somewhat weaker one, might be caused by the O-related trap recently discovered by Loualiche et al. [Appl. Phys. Lett. 51, 1361 (1987).] Combining the Fe acceptor energy position in In0.53Ga0.47As with its known value in InP and the known conduction-band discontinuity of the InP/In0.53Ga0.47As heterointerface we find that the vacuum referred binding energy model is approximately but not strictly valid. In this model the transition-metal impurity levels are aligned with respect to the vacuum level across interfaces regardless of the surrounding host crystal environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341260
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  • 6
    Electronic Resource
    Electronic Resource
    Turn-on delay time fluctuations in gain-switched AlGaAs/GaAs multiple-quantum-well lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2469-2471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The turn-on delay time jitter in unbiased gain-switched AlGaAs/GaAs multiple-quantum-well lasers is determined by measuring the transient fluctuations of the total emitted power with the use of a fixed-time sampling technique with a picosecond temporal resolution. The turn-on jitter is found to decrease significantly with increasing pumping rate, particularly when the lasers are operated at an excitation level at which only the first relaxation oscillation is emitted. The root-mean-square jitter of the emitted optical pulses decreases from about 20 ps just above the laser threshold to a value of 14 ps at the threshold for the appearance of the second relaxation oscillation. These results demonstrate that an accurate adjustment of the pumping rate is essential for a low-jitter single-pulse operation of the gain-switched lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341025
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5578-5583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient resonant excitonic waveguiding is achieved in laser structures, grown by metallorganic chemical vapor deposition, with stacked CdSe quantum islands which were separated by ternary ZnSSe barriers. Plastic relaxation within the stack is shown to be suppressed by adjusting the sulfur content in the barriers to compensate the strain. Excitonic lasing with low threshold intensities is demonstrated well above room temperature with Ith77 K=0.8 kW/cm2 and Ith300 K=55 kW/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371563
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  • 8
    Electronic Resource
    Electronic Resource
    Enhancement of nonradiative interface recombination in GaAs coupled quantum wells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 434-438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination dynamics of GaAs multiple quantum wells as a function of barrier widths LB are studied in a semiconductor in the range between LB=0.87 nm (superlattice) and LB=18.1 nm (uncoupled wells) by means of cathodo- and photoluminescence. With decreasing LB the nonradiative recombination rate is found to be drastically enhanced, where-as the radiative recombination probability decreases. Thus a pronounced decrease of the quantum efficiency results. The controlled variation of the barrier width is found to be decisive for an unambiguous identification of the origin of the traps which are responsible for the nonradiative processes: Comparison with a theoretical calculation shows that they are localized at the heterointerfaces and not in the barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345220
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  • 9
    Electronic Resource
    Electronic Resource
    Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2214-2216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination dynamics of excess charge carriers around misfit dislocations in strained layer GaAs/In0.23Ga0.77As/GaAs quantum wells are directly imaged with spectrally and time-resolved infrared cathodoluminescence imaging with subnanosecond time resolution. This unique experimental approach for the first time allows the imaging of excitonic lifetime around dislocations in such quantum wells. A strong reduction is observed. The quenching by more than two orders of magnitude of the quantum efficiency upon an increase of the line dislocation density from 4×103 to 5×106 m−1 is explained quantitatively by a diffusion model. The critical layer thickness is determined to agree well with the "mechanical equilibrium of forces'' model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344288
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  • 10
    Electronic Resource
    Electronic Resource
    Carrier injection in semiconductors with position-dependent band structure: Electron-beam-induced current at heterojunctions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2505-2514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present simulations of external carrier injection in semiconductors with position-dependent band structure by numerical solution of the current transport equations across the device. As a model case, we examine electron-beam-induced current at heterojunctions. Our treatment is applicable to an arbitrary position-dependent band structure, and any form of external generation, and allows for an external bias applied to the device. The quality of ohmic contacts is taken account of by realistic boundary conditions. For excitation by an electron beam at a GaAs/AlGaAs n-N isotype heterojunction, we present band profiles, as well as linescans, of electron-beam-induced current and voltage. The influence of external generation rate, interface grading, and contact quality is investigated. The latter is shown to be important in epitaxial layers which are only a few minority-carrier diffusion lengths thick. The saturation behavior of the signal with increasing injection level is studied as a function of device parameters, and the applicability of such measurements to the determination of band offsets is critically discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341633
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