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  • 1
    Digitale Medien
    Digitale Medien
    Synthesis and Characterization of Soluble Alternating Aromatic Copolyimides (1994)
    s.l. : American Chemical Society
    Macromolecules 27 (1994), S. 3459-3463 
    Details
    ISSN: 1520-5835
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ma00091a003
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  • 2
    Digitale Medien
    Digitale Medien
    A study of 2H trapping and release in 2H+-irradiated YBa2Cu3O7−δ /MgO〈100〉 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 344-352 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A thin-film sample of YBa2Cu3O7−δ on MgO was irradiated at room temperature with 50-keV 2H+ (deuterium) to a dose of 1×1016 ions cm−2. The film was mainly c-axis textured film, ∼360–420 nm thick, deposited by sputtering on 〈100〉 MgO substrate. The as-implanted sample was divided into several pieces and annealed in a flowing oxygen ambient using (i) a rapid thermal annealing oven, at various temperatures between 450 and 940 °C, and (ii) a conventional annealing furnace, at various temperatures between 100 and 350 °C. Analysis by secondary-ion mass spectroscopy shows that the implanted 2H is a fast diffuser in the 123 phase. The apparent activation temperature (energy) for 2H release from the initial traps within the YBCO film during the anneal is estimated to be ∼175 °C (∼0.97 eV), which is obviously lower than the apparent activation temperature (energy) for 2H release from the initial traps within the MgO substrate (∼550 °C, i.e., ∼1.78 eV). At 200 °C the diffusivity of 2H in the YBCO film is estimated to be ∼1.4×10−13 cm2/s. In the irradiated MgO, during the anneal the migration and release of 2H is thought to be radiation enhanced around the higher damage region. No diffusional broadening or diffusion tail toward the deeply undamaged region was observed. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360681
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  • 3
    Digitale Medien
    Digitale Medien
    Nitrogen-doped ZnSe with selenium-rich growth by low-pressure organometallic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7821-7824 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A high-quality nitrogen-doped p-type ZnSe epilayer on (100) GaAs substrate was obtained under selenium-rich growth conditions by low-pressure organometallic chemical vapor deposition. Ammonia was used as the dopant source. The resistivity (0.5 Ω cm) and the free-carrier concentration (p=8.8×1017 cm−3) of as-grown ZnSe:N were derived from Hall measurements. With selenium-rich growth conditions, we can reduce the concentration of compensation defects (VSe-Zn-NSe which acts as a donor in ZnSe). Nitrogen is found to incorporate in ZnSe as a shallow level, which is examined by the dependence of free-to-acceptor emission on the NH3/H2Se molar ratio. The carrier concentration of as-grown ZnSe:N seems to change insignificantly within a wide range of growth temperatures. That is thought to be useful for device fabrication due to uniformity considerations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357029
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  • 4
    Digitale Medien
    Digitale Medien
    In situ laser reflectometry study of the morphology of Ge/GaAs layers during their heteroepitaxial growth (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5680-5685 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The morphology of Ge layers, a few micrometers thick, grown by chemical-vapor deposition on GaAs substrates, is very sensitive to the growth conditions. The evolution of the intensity of the dynamic in situ reflectometry reveals different growth features. We present here an analysis of the basic elements from which it is possible to deduce important physical parameters of the Ge layers: the shape of the growth defects, their density, the optical index of the homogeneous layer, and the effective index of the rough layer. The respective contributions of the scattered and refracted intensities to the measured intensity are described semiempirically. Typical experimental curves and their corresponding time-dependent growth rate, optical index, and morphology are given. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359625
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  • 5
    Digitale Medien
    Digitale Medien
    A study of 2H trapping in YBa2Cu2O7−δ /LaAlO3 〈100〉 samples under 2H+ irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4081-4084 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A c-axis oriented YBa2Cu3O7−δ film, 180–230 nm thick, deposited onto 〈100〉 LaAlO3 by dc sputtering was irradiated at room temperature with 50 keV 2H+ (deuterium) ions to a dose of 1×1016 cm−2. Secondary-ion-mass spectroscopy analysis shows that after implantation the implanted 2H is trapped in both the film and the substrate. For example, when the thickness of the YBCO film is equal to ∼180 nm, it contains about 4.5% of the retained dose. The as-implanted 2H distribution is essentially Gaussian-like and the depth (Rˆp) of maximum 2H concentration is ∼485 nm. It is obvious that the target crystallinity has to be taken into account for the range data, since the experiment values (Rˆp,R¯p, and ΔRp) are obviously larger than the corresponding values from the transport of ions in matter code. This implantation makes the YBa2Cu3O7−δ film more granular. Within the irradiated LaAlO3 substrate, a damaged band was observed by cross-sectional transmission electron microscopy, which was centered at about 85% of Rˆp(exp).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357005
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  • 6
    Digitale Medien
    Digitale Medien
    Structural and dielectric properties of epitaxial SrTiO3 films grown on Si(100) substrate with TiN buffer layer (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2358-2362 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: SrTiO3 thin films have been grown on Si(100) substrates by pulsed laser deposition using an epitaxial TiN film as a buffer layer, and their structural and dielectric properties were investigated as functions of deposition parameters. X-ray diffraction analysis showed that the SrTiO3 films were grown epitaxially in the wide range of substrate temperatures (400–650 °C) and ambient oxygen pressure (10−5 Torr–150 mTorr) with an orientation relationship of SrTiO3(100) // TiN(100) // Si(100) and SrTiO3〈010〉 // TiN〈010〉 // Si〈010〉. The crystallinity of the epitaxial films was improved with the increase of the substrate temperature and decrease of the ambient oxygen pressure, while the film surface morphology was degraded with increasing either of the two parameters. The relative dielectric constant of the films was revealed to depend both on the crystallinity and on the surface roughness of the films, the highest value of which was cursive-epsilonr=270 at 1 MHz, comparable to that of bulk SrTiO3. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364240
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  • 7
    Digitale Medien
    Digitale Medien
    INFINITE SUBSTITUTION EFFECTS FOR STRICTLY QUASI-CONCAVE UTILITY FUNCTIONS: A NOTE (1975)
    Oxford, UK : Blackwell Publishing Ltd
    Bulletin of economic research 27 (1975), S. 0 
    Details
    ISSN: 1467-8586
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Wirtschaftswissenschaften
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1467-8586.1975.tb00119.x
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  • 8
    Digitale Medien
    Digitale Medien
    SHORT-RUN COST IN A DYNAMIC CONTEXT (1974)
    Oxford, UK : Blackwell Publishing Ltd
    Bulletin of economic research 26 (1974), S. 0 
    Details
    ISSN: 1467-8586
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Wirtschaftswissenschaften
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1467-8586.1974.tb00102.x
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  • 9
    Digitale Medien
    Digitale Medien
    Determination of Panthenol, Cholecalciferol and Tocopherol in Cosmetic Products by Gas Chromatography-Mass Spectrometry in SIM Mode (1999)
    Dordrecht, The Netherlands : Blackwell Science Ltd
    International journal of cosmetic science 21 (1999), S. 0 
    Details
    ISSN: 1468-2494
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: A novel simple method to detect vitamins in cosmetic products by gas chromatography-mass spectrometry (GC-MS) has been developed. Three vitamins (panthenol, cholecalciferol and tocopherol) were used for this study. Vitamins were prepared by dissolving in tetrahydrofuran (ThF), and silylated with bis-trimethylsilyltri-fluoroacetamide- trichloromethylsilane (BSTFA). Silylated vitamins were separated on a fused-silica capillary column coated with DB-5. The identification of each vitamin was accomplished by retention time and mass spectrum library search with a computer, and the quantitation was made in the selected-ion monitoring (SIM) mode of GC-MS. SIM mode had given sensitivity to determine 50 pg of panthenol, 285 pg of cholecalciferol and 130 pg of tocopherol. Linearity was maintained over the range 0.005–0.20% for each vitamin. Each cosmetic product (i.e. hair tonic and lotion) was found to contain amounts of the vitamins. This method was sensitive and gave 77.5–99.9% recovery of each vitamin from these cosmetic products. From these results, we concluded that silylation with BSTFA followed by GC-MS analysis allows the simple, convenient and exact determination of panthenol, cholecalciferol and tocopherol.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1467-2494.1999.181685.x
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  • 10
    Digitale Medien
    Digitale Medien
    Urine dopamine in normal and hypertensive pregnancies (1982)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 89 (1982), S. 0 
    Details
    ISSN: 1471-0528
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Summary. Dopamine output in urine was determined in two groups of women with hypertension in pregnancy. A highly significant elevation of urine dopamine was detected in those women with pre-eclampsia compared with that in matched control subjects. In contrast, no difference in urine dopamine output was detected between a group of multigravidae with hypertension in pregnancy and matched control subjects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1471-0528.1982.tb04677.x
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