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  • 1
    Electronic Resource
    Electronic Resource
    Lattice Strain and Dislocations in Polished Surfaces on Sapphire (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Polishing of ceramics, surface defects and strain are introduced that influence the mechanical properties in the final products. In this study, the sapphire surfaces with a-plane and c-plane were polished using several kinds of diamond slurry, and the introduced damaged zones were investigated using transmission electron microscopy (TEM), high-resolution TEM, and TEM-CBED (convergent beam electron diffraction). It was found that the types of slip systems and strain distribution were different between the a-plane-polished and the c-plane-polished specimens. That is, the basal slip and the prism slip were mainly activated in the c- and a-plane-polished specimens to form the different damaged zones. This difference was probably due to the difference in the direction and angle from the slip plane and applied shear stress during the polishing. On the basis of these observations, the types of introduced dislocations and distribution of strain were discussed to clarify the mechanism of polishing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00398.x
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  • 2
    Electronic Resource
    Electronic Resource
    Current–Voltage Characteristics of Cobalt-Doped Inversion Boundaries in Zinc Oxide Bicrystals (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Undoped and cobalt-doped basal inversion boundaries were fabricated in ZnO bicrystals to investigate their current–voltage characteristics. High-resolution transmission electron microscopy observations and energy-dispersive X-ray spectroscopy analyses for a cobalt-doped bicrystal revealed that the boundary was highly coherent and free from intergranular phases and precipitates, but a certain amount of cobalt was present near the boundary. The cobalt-doped bicrystals exhibited nonlinear characteristics that depended on cooling rates from annealing temperature, in contrast to linear characteristics of the undoped bicrystals. It is suggested that the presence of cobalt impurities enhances the formation of acceptor-like native defects near the boundaries to generate electrostatic potential barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03526.x
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  • 3
    Electronic Resource
    Electronic Resource
    Direct Characterization of Grain-Boundary Electrical Activity in Doped (Ba0.6Sr0.4)TiO3 by Combined Imaging of Electron-Beam-Induced Current and Electron-Backscattered Diffraction (2004)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Simultaneous measurements of remote electron beam induced current (REBIC) and orientation imaging microscopy (OIM) in a scanning electron microscope (SEM) have been applied to a polycrystalline (Ba0.6Sr0.4)TiO3 with a positive temperature coefficient of resistivity (PTCR) to elucidate a grain-boundary character dependence of the potential barrier formation. The absence of electrical activity in a coherent Σ3 twin boundary is clearly imaged. The resistivity of individual grain boundaries estimated from a resistive contrast image is interpreted in terms of geometrical coherency, which is defined by the degree of coincidence in the reciprocal lattice points.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.01153.x
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic Structures and Energies of Σ7 Symmetrical Tilt Grain Boundaries in Alumina Bicrystals (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Symmetrical Σ7 tilt grain boundaries of alumina (Al2O3) were studied using bicrystals. Three types of Σ7 boundaries were successfully fabricated, that is, rhombohedral twin (Σ7{1[Onemacr]02}) and two types of [0001] symmetrical tilt grain boundaries with grain-boundary planes {4[Fivemacr]10} and {2[Threemacr]10} (Σ7{4[Fivemacr]10} and Σ7{2[Threemacr]10}). Their atomic structures and grain-boundary energies were investigated using high-resolution transmission electron microscopy (HRTEM) and a thermal grooving technique, respectively. HRTEM observations showed that the Σ7{1[Onemacr]02} boundary had a completely symmetrical atomic arrangement with respect to the grain-boundary plane. In contrast, Σ7{2[Threemacr]10} and Σ7{4[Fivemacr]10} boundaries exhibited asymmetrical atomic structures, which were confirmed by analyzing the atomic configurations using static lattice calculations. Thermal grooving experiments showed that the grain-boundary energies strongly depended on the properties of the grain-boundary planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03343.x
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation Structures of Low-Angle and Near-Σ3 Grain Boundaries in Alumina Bicrystals (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Alumina bicrystals with low-angle and near-Σ3 〈0001〉 tilt grain boundaries were fabricated using diffusion bonding to study the dislocation structures in alumina grain boundaries. The resulting grain-boundary structures were investigated using high-resolution transmission electron microscopy, and the grain-boundary energies were analyzed using theoretical calculations. It was found that partial dislocations with Burgers vectors of the type return ⅓〈10[Onemacr]0〉 were periodically located in the boundaries and that a stacking fault between pairs of partials was formed in such boundaries. The length of the stacking fault decreased with increased misorientation angles, which was reasonably predicted by the theoretical calculation. In the case of a near-Σ3 grain boundary, an array of displacement shift complete dislocations with the Burgers vector of return ⅓〈1[Onemacr]00〉 was periodically formed along the boundaries. These boundaries did not have stacking faults. The spacing between the dislocations decreased with increased deviation angle from the exact-Σ3 boundary with the tilt angle of 60°.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03346.x
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of Interaction between Neighboring Oxygen Ions on Phase Stability in Cubic Zirconia (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The electronic structures of undoped c- and t-ZrO2 were calculated by a first-principles molecular orbital method. A preliminary analysis revealed that experimental energy-loss near-edge structure profiles obtained in ZrO2–8 mol% Y2O3 could be satisfactorily explained from the present theoretical calculation. The calculation suggests that the stability of t-ZrO2 could be described by the interaction between neighboring oxygen ions rather than the covalency of Zr—O bonds. The effect of dopant cations on the stability of cubic-zirconia solid solutions can be estimated semiquantitatively in terms of the repulsive Coulomb force between neighboring oxygen ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00495.x
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  • 7
    Electronic Resource
    Electronic Resource
    Self-Lubrication of Chlorine-Implanted Titanium Nitride Coating (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Chlorine implantation into TiN coatings decreases the wear loss and the friction coefficient. Even by low-dose chlorine implantation, the wear volume is decreased by three orders of magnitude or more, and the friction coefficient becomes 〈0.1. This self-lubrication mechanism is related to the presence and mobility of implanted chlorine atoms inside the columnar TiN microstructure. According to observations of chlorine-implanted TiN coatings using high-resolution transmission electron microscopy, the chlorine atoms are present in the damaged region, where TiN is composed of nanosized grains. From these data, a self-lubrication mechanism is proposed with chlorine catalyzing the oxidation of titanium and leading to the formation of some tribological reaction product.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00032.x
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  • 8
    Electronic Resource
    Electronic Resource
    Grain boundary electrical barriers in positive temperature coefficient thermistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2909-2913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance–temperature, current–voltage, and capacitance–voltage characteristics have been measured in niobium-doped barium titanate bicrystals. The analysis by device simulation reveals that potential barrier with a semiconductor–insulator–semiconductor structure can consistently interpret the observed characteristics rather than the double Schottky barrier. Absence of sub-ohmic behavior in the current–voltage characteristics and excess low-frequency capacitance at zero bias are caused by the spatially distributed traps at the insulating layer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371140
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  • 9
    Electronic Resource
    Electronic Resource
    Direct observation of hexagonal boron nitride at the grain boundary of cubic boron nitride by high resolution electron microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2490-2492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cubic boron nitride (c-BN) film deposited on a Si substrate was observed by high resolution electron microscopy. Thin layers, 1–2 nm, of hexagonal boron nitride (h-BN) phase were often found at the boundaries of c-BN grains. The observed interplanar spacing was about 0.33 nm, which coincided with that of the (0002) plane of h-BN. The nucleation mechanism of c-BN film is briefly discussed based on the formation of the h-BN phase at the grain boundaries. The existence of the h-BN phase at the boundaries of c-BN grains may be the reason for the occurrence of compressive stress and cracks in c-BN thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113142
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  • 10
    Electronic Resource
    Electronic Resource
    Transmission electron microscopic study of c -BN films deposited on a Si substrate (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1478-1480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructure of c-BN films synthesized by the ion-plating method were observed and characterized by high resolution electron microscopy and microdiffraction. The c-BN films of ∼0.2 μm thickness were deposited on top of ∼0.05 μm of h-BN, which was oriented with its c-axis parallel to the substrate. Lattice image taken along the 〈011〉 direction showed that c-BN film was well crystallized with an interplanar distance ∼2.1 A(ring), although the grain size was extremely small, from 5 to 20 nm. Further, the microdiffraction pattern along the 〈011〉 direction by focusing the electron beam to ∼20 A(ring), clearly showed that the small grains consisted of a single crystal of c-BN. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113660
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