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  • 1
    Electronic Resource
    Electronic Resource
    Single-frequency antiguided laser array with buried distributed feedback grating (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7220-7223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-frequency, in-phase mode operation has been obtained from a ten-element antiguided phase-locked array with Talbot-type filters by incorporating a buried distributed feedback grating using a three-step metalorganic chemical vapor deposition process. Stabilized frequency with 25 dB side-mode suppression ratio is achieved to 50 mW pulsed output power. In-phase or a mixture of in-phase and out-of-phase modes are observed in nonresonant (nonoptimized) devices. Means of improving device performance (e.g., use of resonant longitudinally uniform arrays or nearly resonant Talbot-filter arrays without gratings in the filter) are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356677
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-power, diffraction-limited-beam operation from interferometric, phase-locked arrays of AlGaAs/GaAs diode lasers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3716-3718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern quality is not sensitive to the facet(s) reflectivity value(s). Transformation to a single-lobe pattern requires a simple phase-corrector coating or plate. The device beam pattern as a function of the array geometry is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342601
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Complementary self-aligned laser arrays by metalorganic chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2633-2635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step metalorganic chemical vapor deposition growth technique has been used to fabricate multielement arrays of complementary self-aligned lasers using graded barrier quantum well active regions. This technique eliminates any possible difficulty associated with regrowth on a high composition AlGaAs layer by placing the interface outside the stripe region. The complex index guiding and resulting mode discrimination characteristics of self-aligned lasers stabilize the near- and far-field patterns of the array. Comparison studies between shallow mesa arrays and self-aligned arrays are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337138
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Near- and far-field observations of transient behavior in pulsed graded barrier quantum well lasers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2613-2615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pulsed behavior of both gain-guided and index-guided graded barrier quantum well lasers has been studied with near- and far-field lateral mode measurements at different pulse widths. Above threshold, gain-guided devices show a transition to predominantly index-guided operation as a result of thermally induced waveguiding. Similar devices with built-in real index guiding exhibit low threshold, stable mode operation, with no observable variations with pulse width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337130
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  • 5
    Electronic Resource
    Electronic Resource
    High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2901-2903 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 3 W cw output power has been obtained from aluminum-free, strained-layer double-quantum well (DQW) InGaAs/InGaAsP/InGaP uncoated, 100-μm-wide stripe diode lasers (λ=0.945 μm) grown by low-pressure MOCVD on exact (100) GaAs substrates. The combination of high-band-gap (1.62 eV) InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence for both the threshold current Ith as well as the external differential quantum efficiency ηd. Furthermore, the series electrical resistance for 100 μm×600 μm stripe-contact devices is as low as 0.12 Ω. As a result, the power conversion efficiency reaches a maximum of 40% at 8×Ith, and decreases to only 33% at the maximum power (i.e., 3 W) at 28×Ith. Low-temperature (12 K) photoluminescence measurements of InGaAs/InGaAsP quantum-well structures exhibit narrow linewidths (〈10 meV) for material grown on exact (100) GaAs substrates, while growths on misoriented substrates exhibit linewidth broadening, as a result of "step bunching.'' Laser structures grown on misoriented substrates exhibit increased temperature sensitivity of both Ith and ηd, compared with structures grown on exact (100) substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114836
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  • 6
    Electronic Resource
    Electronic Resource
    Watt-range, coherent, uniphase powers from phase-locked arrays of antiguided diode lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2070-2072 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Twenty-element near-resonant AlGaAs/GaAs arrays of antiguides have been optimized for maximum intermodal discrimination and large Strehl ratio. It is found that 1000-μm-long devices with two intracavity Talbot-type spatial filters, and a 3 to 1 ratio between element core and interelement spacing provide the best results. The intermodal discrimination is discussed for both Talbot and uniform devices. For devices with two Talbot-type spatial filters, diffraction-limited-beam operation is obtained to 1 W pulsed power, and operation in a beam with lobewidth 1.5× diffraction limit is obtained to 2 W and 19× threshold. cw diffraction-limited-beam operation is obtained to 0.5 W, limited by thermal considerations. Uniform devices operate in beams with lobewidth ≈3× diffraction limit to 5 W and 45× threshold. At 5 W total output the coherent uniphase power is 1.6 W, and the coherent power in the main lobe is 0.94 W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105013
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  • 7
    Electronic Resource
    Electronic Resource
    High performance surface-emitting lasers with 45° intracavity micromirrors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 16-18 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, high performance GaAs/GaAlAs surface-emitting lasers with internal 45° micromirrors, which totally reflect and emit the beam from the substrate in junction-down configuration, have been demonstrated. The 45° and 90° mirrors of the device were fabricated by using ion milling and reactive ion etching techniques, respectively. Typical threshold current density of 440 A/cm2, external differential efficiencies of 52%, and output power in excess of 1 W under quasi-cw operation have been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104435
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  • 8
    Electronic Resource
    Electronic Resource
    cw high-power diffraction-limited-beam operation from resonant optical waveguide arrays of diode lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 22-24 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monolithic phase-locked resonant arrays of antiguides, resonant optical-waveguide (ROW) arrays, have been optimized for efficient in-phase-mode operation. Diffraction-limited, in-phase-mode continuous-wave (cw) operation is obtained from 20-element uniform arrays to 250 mW output power, with (front facet) external differential quantum efficiencies of 41%. Single longitudinal mode operation is observed below 100 mW cw. In-phase-operating devices with and without Talbot-type spatial filters are compared, and it is found that for ROW arrays Talbot-type spatial filters are not required.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104425
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  • 9
    Electronic Resource
    Electronic Resource
    High-power, narrow single-lobe operation from 20-element phase-locked arrays of antiguides (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2060-2062 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure in-phase-mode operation is obtained from 20/21-element AlGaAs/GaAs antiguided arrays grown by two-step metalorganic chemical vapor deposition. Oscillation of out-of-phase modes is substantially suppressed by a built-in spatial filter: two sets of noncollinear antiguides separated by a 50-μm-long laterally unguided region, corresponding to the half-Talbot distance. Design considerations for 20- vs 10-element arrays are discussed. Diffraction-limited-beam operation (i.e., 0.8° lobewidth) is obtained to 1.5×threshold (90 mW, both facets). Beams with 1.3° lobewidth (1.6×diffraction limit) are obtained at 3×threshold and 300 mW (both facets). Devices with optimized facet coatings operate in a single, 1.5°-wide lobe (i.e., 1.8×diffraction limit) at 330 mW front-facet emitted power. The main lobe contains 80–87% of the total power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102105
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Resonant optical transmission and coupling in phase-locked diode laser arrays of antiguides: The resonant optical waveguide array (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2183-2185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniform linear arrays of antiguides have 100% optical transmission between elements when the interelement spacing is an integer number of leaky wave half-wavelengths in the lateral direction. Resonant in-phase-mode and out-of-phase-mode coupling occurs when the number of half-wavelengths is odd and even, respectively. Such devices are called resonant optical waveguide (ROW) arrays. The discrimination between the resonant array mode and adjacent array modes reaches a maximum in close proximity to the resonance. An AlGaAs/GaAs ROW diode laser array operating close to resonance is demonstrated. Devices with virtually uniform near-field intensity profiles operate in stable, diffraction-limited in-phase modes to drive levels in excess of three times threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101159
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