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  • 1
    Electronic Resource
    Electronic Resource
    Homojunction diode of CuInSe2 thin film fabricated by nitrogen implantation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2067-2070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rectifying homojunction have been fabricated in polycrystalline CuInSe2 thin film. The p-n junction diode was obtained by short annealing in nitrogen atmosphere at 450 °C following the ion implantation of nitrogen with the energy and the dose of 50 keV and 1×1015 cm−2, respectively. The properties of the near surface region in the films implanted have been studied by the Raman scattering spectroscopy. The secondary ion mass spectroscopy depth profile of the nitrogens in the CuInSe2 film and the capacitive-voltage characteristics of the rectifying diode have been measured to characterize the junction properties. The photovoltaic characteristics in AM 1.0, 100 mW/cm2 are shown with the efficiency of 0.35%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355296
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  • 2
    Electronic Resource
    Electronic Resource
    Native defects in the AlxGa1−xSb alloy semiconductor (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6153-6158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect concentrations in AlxGa1−xSb which is in equilibrium with a liquid phase are calculated. When the liquid phase is Ga rich, a Ga antisite (Ga2−Sb) or an Al antisite (Al2−Sb) is dominant, and the concentrations of vacancies are much smaller than the antisite concentrations. Ga2−Sb is dominant in GaSb equilibrated with a Sb-rich solution, but the concentration of Sb antisites comes close to that of Ga2−Sb as temperature is lowered. For x larger than 0.6, a group-III vacancy is the predominant defect in the case of Sb-rich solutions. Calculated net acceptor concentrations agree well with those determined experimentally. A complex defect composed of GaSb and a Ga vacancy, which have been taken as the dominant residual acceptor, is expected to be negligible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346904
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of carbon nitride films with high N/C ratio by high-pressure radio frequency magnetron sputtering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7416-7418 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride films were synthesized on Si(100) substrate using relatively high-pressure radio-frequency magnetron sputtering of a graphite target in a nitrogen ambient. The influences of the substrate temperature and pressure on deposition rate and the film composition ratio N/C and C–N bonding were investigated using x-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FTIR). The deposition rate had a maximum in the investigated pressure region and reduced as the substrate temperature increased. XPS spectra showed that the deposited films were very large N/C value up to 1.20, and unchanged after thermal treatment up to about 900 K, the latter confirmed by FTIR. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360397
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  • 4
    Electronic Resource
    Electronic Resource
    Novel main-chain poly-carbazoles as hole and electron transport materials in polymer light-emitting diodes (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1921-1923 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the use of substituted main-chain poly-carbazoles as hole and electron transporting polymers for electroluminescence (EL) applications. The polymers are soluble in common organic solvents and high quality thin films are obtained by spin coating method. A single layer of hole or electron transfer devices with indium tin oxide anode and aluminum cathode shows current densities up to 40–50 mA/cm2, respectively, but no visible emission from either layer. Double-layer structures combining the hole and electron transfer polymers show strong emission originated from the electron transfer layer. The peak of double-layer EL spectrum is about 30 nm redshifted to the peak of corresponding photoluminescence spectrum, which may be due to the formation of an exciplex between the two layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119981
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of transient photocurrents in Cu(In,Ga)Se2 thin film solar cells (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3572-3575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transient photocurrent measurement with a zero-field time-of-flight configuration was carried out on ITO/ZnO/CdS(n-type)/Cu(In,Ga)Se2(p-type, Eg=1.15 eV)/Mo/glass solar cell to get the information about the minority carrier transport on the Cu(In,Ga)Se2 film. The transient photocurrent was recorded after the incidence of a subnanosecond pulse light (500 nm wavelength) from the back side through the Mo thin film (〈0.5 μm). The analysis of the transient photocurrent was conducted by using the time-dependent diffusion current equation. Consequently, the values of 1.0 cm2/s, 100 ns, and 103 cm/s as the diffusion coefficient, the minority carrier lifetime, and the recombination velocity in the Cu(In,Ga)Se2/Mo interface, respectively, were obtained on the Cu(In,Ga)Se2 film. These data corresponded to the electron beam induced current line profile data, and the experimental data of J0, analyzed by current–voltage characteristics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365675
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  • 6
    Electronic Resource
    Electronic Resource
    High transition temperature superconductor LaBa2Cu3O7−y with zero resistance at 92 K (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1989-1991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of LaBa2 Cu3 O7−y have been synthesized, which show a superconducting transition above 90 K. One of the samples shows a superconducting transition with an onset at 93 K and a zero resistivity at 92 K. These temperatures are the highest among those reported so far on this system and even higher than those in YBa2 Cu3 O7−y. The magnetic susceptibility measurement also shows that it has a superconducting transition with onset at around 93 K. To synthesize such good LaBa2 Cu3 O7−y requires two important procedures. First is sintering above 950 °C in N2 gas atmosphere and the second is annealing at 300 °C in dried O2 gas atmosphere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99744
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  • 7
    Electronic Resource
    Electronic Resource
    Study on the preparation of 90-K superconductor LaBa2Cu3Oy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4095-4102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-Tc superconductor LaBa2Cu3Oy has been prepared under various conditions, and characterized by x-ray and neutron powder diffraction techniques, dc and ac magnetic susceptibility measurements, and dc resistivity measurement. It has been found that samples with excellent superconducting characteristics and also with good structural properties are obtained in a reproducible way if the following three procedures are performed: preheat treatment of La2O3 powders, sintering in N2, and low-temperature annealing in dried O2. Long-time annealing in undried O2 was sometimes found to degrade the grain boundaries and to lead to a lower zero-resistance temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341318
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  • 8
    Electronic Resource
    Electronic Resource
    6-GeV synchrotron radiation project : International conference on synchrotron radiation instrumentation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1719-1721 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper outlines the status of a 6-GeV synchrotron radiation designed at RIKEN. This facility consists of a main storage ring, a booster synchrotron, a 1.5-GeV preinjector linac, positron injection linacs, and others. The electronan GeV. The storage ring has a circumference of 1069.2 m and 7-m-long straight sections for insertion devices. The lattice of the main ring is a Chasman–Green-type one and has 36 periodicity. The low emittance (εx=8.2 nm rad) and large dynamic aperture are expected even with field errors and misalignments of magnetic elements. Three years of a preconstruction research and development period and 5 years of construction period are scheduled.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140937
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  • 9
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy' '' [Appl. Phys. Lett. 62, 1800 (1993)] (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3237-3237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110210
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1800-1802 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the nature of the interface between ZnSe and semi-insulating GaAs can be studied by observing the phonon-plasmon coupled mode by micro-Raman spectroscopy. When the GaAs substrate is sulfur-treated before the growth of ZnSe, the phonon-plasmon coupled mode is clearly observed in micro-Raman spectra. The plasmon is believed to be composed of electrons excited by the focused laser beam used in the micro-Raman measurement. The coupled mode is weak when the substrate is not sulfur-treated. The reduction in the coupled-mode intensity will be due to interface states which widen the depletion layer and shorten the lifetime of excess carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109554
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